2N3053 MEDIUM POWER SILICON NPN PLANAR TRANSISTOR MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) FEATURES 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. • VCEO = 40V 5.08 (0.200) typ. = 0.7A • Ptot = 5W 2.54 (0.100) 2 1 • IC 3 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 45° TO39 PACKAGE (TO-205AD) Underside View Pin 1 = Emitter Pin 2 = Base Pin 3 = Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VCER VCEX VEBO IC PTOT Tj Tstg Rth(jc) Rth(ja) Collector – Base Voltage Collector – Emitter Voltage Collector – Emitter Sustaining Voltage Collector - Emiiter Voltage Emitter-Base Voltage Collector Current Power Dissipation Tamb = 25°C Tcase = 25°C Junction Temperature Storage Temperature Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient 60V 40V 50V 60V 5V 0.7A 1W 5W 200°C –65 to 200°C 35°C / W 175°C / W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 3065 Issue 1 2N3053 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter VCEO(SUS) Test Conditions Min. Typ. Max. Unit Collector – Emitter Voltage IC = 100µA IB = 0 40 VCER(SUS)* Collector – Emitter Voltage RBE = 10Ω IC = 10mA 50 V(BR)CBO* Collector – Base Breakdown Voltage IC = 0.1mA IE = 0 60 V(BR)EBO* Emitter – Base Breakdown Voltage IE = 0.1mA IC = 0 5 ICBO Collector – Base Cut-off Current VCB = 30V IE = 0 0.25 IEBO Emitter - Base Cut-off Current VEB = 4V IC = 0 0.25 VCE(sat)* Collector – Emitter Saturation Voltage IC = 0.15A IB = 0.015A 1.4 VBE(sat)* Base – Emitter Saturation Voltage IC = 0.15A IB = 0.015A 1.7 h21E* Static Forward Current Transfer ratio IC = 0.15A VCE = 10V fT Transistion Frequency VCE = 10V IC = 0.05A C22b Output Capacitance VCB = 10V f =1MHz 15 C11b Input Capacitance VEB = 10V f =1MHz 80 f = 20MHz 50 V 250 100 µA V — MHz pF * Pulsed tp = 300µS δ ≤ 2 % Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 3065 Issue 1