SML1001RHN SML901RHN0 TO–258 Package Outline. 4TH GENERATION MOSFET Dimensions in mm (Inches) 6.86 (0.270) 6.09 (0.240) 4.19 (0.165) 3.94 (0.155) Dia. 21.21 (0.835) 20.70 (0.815) 13.84 (0.545) 13.58 (0.535) 1 2 3 N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1.14 (0.707) 0.88 (0.035) 19.05 (0.750) 12.70 (0.500) 17.96 (0.707) 17.70 (0.697) 17.65 (0.695) 17.39 (0.685) D 5.08 (0.200) BSC 3.56 (0.140) BSC G 1.65 (0.065) 1.39 (0.055) Typ. Pin 1 – Drain S Pin 2 – Source Pin 3 – Gate MAXIMUM RATINGS (Tcase =25°C unless otherwise stated) VDSS Parameter Drain – Source Voltage SML 901RHN 1001RHN 900 1000 Unit V 10 A 40 A Continuous Drain Current ID 1 IDM Pulsed Drain Current VGS Gate – Source Voltage ±30 V Total Power Dissipation @ Tcase = 25°C 250 W 2 W/°C PD Derate above 25°C TJ , TSTJ Operating and Storage Junction Temperature Range Lead Tempeature TL –55 to +150°C (0.063” from Case for 10 Sec.) °C 300 STATIC ELECTRICAL RATINGS (Tcase =25°C unless otherwise stated) Characteristic / Test Conditions / Part Number VGS = 0V BVDSS Drain – Source Breakdown Voltage ID = 250mA IDSS IGSS ID(ON) SML1001RHN Min. 1000 SML901RHN 900 Typ. Max. Unit V Zero Gate Voltage Drain Current VDS = VDSS (VGS = 0V) VDS = 0.8VDSS TC = 125°C 1000 Gate – Source Leakage Current VGS = ±30V VDS = 0V ±100 On State Drain Current 2 250 VDS > ID(ON) x RDS(ON) Max VGS = 10V VGS(TH) Gate Threshold Voltage VDS = VGS RDS(ON) Static Drain – Source On State Resistance 2 ID = 1.0mA VGS = 10V , ID = 0.5 ID [Cont.] 10 2 mA nA A 4 V 1.00 W 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2% Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 7/98 SML1001RHN SML901RHN0 DYNAMIC CHARACTERISTICS Ciss Characteristic Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Test Conditions. VGS = 0V Min. Typ. 2460 Max. Unit 2950 VDS = 25V 360 500 f = 1MHz 105 160 VGS = 10V 90 130 ID = ID [Cont.] 9.3 14 Qg Total Gate Charge3 Qgs Gate – Source Charge Qgd Gate – Drain (“Miller”) Charge VDD = 0.5 VDSS 47 70 td(on) Turn–on Delay Time VDD = 0.5 VDSS 15 30 ID = ID [Cont.] 16 32 VGS = 15V 64 95 24 48 tr td(off) tf Rise Time Turn-off Delay Time RG = 1.8W Fall Time pF nC ns SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS IS Characteristic / Test Conditions. Continuous Source Current (Body Diode) ISM Pulsed Source Current1 (Body Diode) VSD Diode Forward Voltage2 trr Reverse Recovery Time Qrr Reverse Recovery Charge Part Number Min. Typ. VGS = 0V IS = – ID [Cont.] IS = – ID [Cont.] Max. Unit 10 A 40 A 1.3 V 320 636 1200 ns 2.2 4.5 9 µC Min. 250 Typ. SOA1 Characteristic / Test Conditions / Part Number Safe Operating Area VDS = 0.4 VDSS , IDS = PD / 0.4 VDSS , t = 1 Sec SOA2 Safe Operating Area 250 dls / dt = 100A/ms SAFE OPERATING AREA CHARACTERISTICS ILM IDS = IDS [Cont.] , VDS = PD / ID [Cont.] , t = 1 Sec Inductive Current Clamped Max. Unit W 40 A THERMAL CHARACTERISTICS (Tcase =25°C unless otherwise stated) RqJC Characteristic / Test Conditions. Junction to Case Junction to Ambient Min. Typ. Max. Unit 0.50 °C/W 40 °C/W 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2% 3) See MIL–STD–750 Method 3471 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 7/98