SEME BFC52 LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm (inches) (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69 5.31 1.49 2.49 4.50 (0.177) M ax. 3.55 (0.140) 3.81 (0.150) 2 VDSS ID(cont) RDS(on) 3 1.65 (0.065) 2.13 (0.084) 19.81 (0.780) 20.32 (0.800) 0.40 (0.016) 0.79 (0.031) 1 2.87 (0.113) 3.12 (0.123) 1.01 (0.040) 1.40 (0.055) 2.21 (0.087) 2.59 (0.102) Terminal 1 Gate Terminal 3 Source 5.25 (0.215) BSC Terminal 2 500V 9.5A Ω 0.85Ω Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSS Drain – Source Voltage 500 V ID Continuous Drain Current 9.5 A IDM Pulsed Drain Current 1 38 A VGS Gate – Source Voltage ±30 V PD Total Power Dissipation @ Tcase = 25°C 180 W TJ , TSTG Operating and Storage Junction Temperature Range TL Lead Temperature : 0.063” from Case for 10 Sec. –55 to 150 °C 300 STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated) Characteristic Drain – Source Breakdown Voltage Test Conditions VGS = 0V , ID = 250µA Zero Gate Voltage Drain Current VDS = VDSS 250 (VGS = 0V) VDS = 0.8VDSS , TC = 125°C 1000 IGSS Gate – Source Leakage Current VGS = ±30V , VDS = 0V ±100 nA VGS(TH) Gate Threshold Voltage VDS = VGS , ID = 1.0mA 4 V ID(ON) On State Drain Current 2 RDS(ON) Drain – Source On State Resistance 2 BVDSS IDSS VDS > ID(ON) x RDS(ON) Max VGS = 10V VGS = 10V , ID = 0.5 ID [Cont.] Min. 500 2 Typ. Max. Unit V 9.5 µA A 0.85 Ω 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2% Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 4/94 SEME BFC52 LAB DYNAMIC CHARACTERISTICS Ciss Characteristic Input Capacitance Test Conditions VGS = 0V Coss Output Capacitance Crss Min. Typ. 740 Max. Unit 950 VDS = 25V 167 234 Reverse Transfer Capacitance f = 1MHz 63 94 Qg Total Gate Charge3 VGS = 10V 33 55 Qgs Gate – Source Charge VDD = 0.5 VDSS 5.6 8 Qgd Gate – Drain (“Miller”) Charge ID = ID [Cont.] @ 25°C 16 24 td(on) Turn–on Delay Time VGS = 15V 10 20 tr Rise Time VDD = 0.5 VDSS 14 28 td(off) Turn-off Delay Time ID = ID [Cont.] @ 25°C 35 48 tf Fall Time RG = 1.8Ω 11 22 pF nC ns SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS IS Characteristic Continuous Source Current Test Conditions (Body Diode) ISM Pulsed Source Current1 (Body Diode) VSD Diode Forward Voltage2 VGS = 0V , IS = – ID [Cont.] trr Reverse Recovery Time IS = – ID [Cont.] , dls / dt = 100A/µs Qrr Reverse Recovery Charge Min. Typ. Max. Unit 9.5 A 38 1.3 V 108 216 432 ns 1.2 2.5 5.0 µC Min. Typ. SAFE OPERATING AREA CHARACTERISTICS Characteristic SOA1 Safe Operating Area SOA2 Safe Operating Area ILM Inductive Current Clamped Test Conditions VDS = 0.4VDSS , t = 1 Sec. IDS = PD / 0.4VDSS VDS = PD / ID [Cont.] IDS = ID [Cont.] , t = 1 Sec. Max. Unit 180 W 180 W 38 A THERMAL CHARACTERISTICS RθJC Characteristic Junction to Case RθJA Junction to Ambient Min. Typ. Max. Unit 0.68 °C/W 40 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2% 3) See MIL–STD–750 Method 3471 CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed. Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 4/94