SEME SML5020BN LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm (inches) (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69 5.31 1.49 2.49 4.50 (0.177) M ax. 3.55 (0.140) 3.81 (0.150) 1 2 1.65 (0.065) 2.13 (0.084) 19.81 (0.780) 20.32 (0.800) 0.40 (0.016) 0.79 (0.031) VDSS ID(cont) RDS(on) 3 2.87 (0.113) 3.12 (0.123) 1.01 (0.040) 1.40 (0.055) 2.21 (0.087) 2.59 (0.102) Pin 1 – Gate 5.25 (0.215) BSC Pin 2 – Drain 500V 28.0A 0.20W Pin 3 – Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSS Drain – Source Voltage 500 V ID Continuous Drain Current 28 A IDM Pulsed Drain Current 1 112 A VGS Gate – Source Voltage ±30 V Total Power Dissipation @ Tcase = 25°C 360 W PD Derate Linearly 2.9 W/°C TJ , TSTG Operating and Storage Junction Temperature Range TL Lead Temperature : 0.063” from Case for 10 Sec. –55 to 150 °C 300 STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated) Characteristic Drain – Source Breakdown Voltage Test Conditions VGS = 0V , ID = 250mA Zero Gate Voltage Drain Current VDS = VDSS 250 (VGS = 0V) VDS = 0.8VDSS , TC = 125°C 1000 IGSS Gate – Source Leakage Current VGS = ±30V , VDS = 0V ±100 nA VGS(TH) Gate Threshold Voltage VDS = VGS , ID = 1.0mA 4 V ID(ON) On State Drain Current 2 RDS(ON) Drain – Source On State Resistance 2 BVDSS IDSS VDS > ID(ON) x RDS(ON) Max VGS = 10V VGS = 10V , ID = 0.5 ID [Cont.] Min. 500 2 Typ. Max. Unit V 28 mA A 0.20 W 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380mS , Duty Cycle < 2% Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 6/94 SEME SML5020BN LAB DYNAMIC CHARACTERISTICS Characteristic Test Conditions Typ. Max. Unit Ciss Input Capacitance VGS = 0V Min. 2890 3500 Coss Output Capacitance VDS = 25V 590 830 Crss Reverse Transfer Capacitance f = 1MHz 230 350 Qg Total Gate Charge3 VGS = 10V 140 210 Qgs Gate – Source Charge VDD = 0.5 VDSS 18 27 Qgd Gate – Drain (“Miller”) Charge ID = ID [Cont.] @ 25°C 75 110 td(on) Turn–on Delay Time VGS = 15V 19 38 tr Rise Time VDD = 0.5 VDSS 43 86 td(off) Turn-off Delay Time ID = ID [Cont.] @ 25°C 85 125 tf Fall Time 56 112 RG = 1.8W pF nC ns SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristic Test Conditions IS Continuous Source Current (Body Diode) 28 ISM Pulsed Source Current1 (Body Diode) 112 VSD Diode Forward Voltage2 VGS = 0V , IS = – ID [Cont.] 1.3 V trr Reverse Recovery Time Qrr Reverse Recovery Charge IS = – ID [Cont.] , dls / dt = 100A/ms IS = – ID [Cont.] , dls / dt = 100A/ms Min. Typ. Max. Unit A 215 430 860 ns 3 7 14 mC Min. Typ. SAFE OPERATING AREA CHARACTERISTICS Characteristic SOA1 Safe Operating Area SOA2 Safe Operating Area ILM Inductive Current Clamped Test Conditions VDS = 0.4VDSS , t = 1 Sec. IDS = PD / 0.4VDSS VDS = PD / ID [Cont.] IDS = ID [Cont.] , t = 1 Sec. Max. Unit 360 W 360 W 112 A THERMAL CHARACTERISTICS RqJC RqJA Characteristic Junction to Case Min. Junction to Ambient Typ. Max. Unit 0.34 °C/W 40 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380mS , Duty Cycle < 2% 3) See MIL–STD–750 Method 3471 CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 6/94