SEME-LAB SML5020BN

SEME
SML5020BN
LAB
4TH GENERATION MOSFET
TO247–AD Package Outline.
Dimensions in mm (inches)
(0.185)
(0.209)
(0.059)
(0.098)
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
15.49 (0.610)
16.26 (0.640)
20.80 (0.819)
21.46 (0.845)
6.15
(0.242)
BSC
4.69
5.31
1.49
2.49
4.50
(0.177)
M ax.
3.55 (0.140)
3.81 (0.150)
1
2
1.65 (0.065)
2.13 (0.084)
19.81 (0.780)
20.32 (0.800)
0.40 (0.016)
0.79 (0.031)
VDSS
ID(cont)
RDS(on)
3
2.87 (0.113)
3.12 (0.123)
1.01 (0.040)
1.40 (0.055)
2.21 (0.087)
2.59 (0.102)
Pin 1 – Gate
5.25 (0.215)
BSC
Pin 2 – Drain
500V
28.0A
0.20W
Pin 3 – Source
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VDSS
Drain – Source Voltage
500
V
ID
Continuous Drain Current
28
A
IDM
Pulsed Drain Current 1
112
A
VGS
Gate – Source Voltage
±30
V
Total Power Dissipation @ Tcase = 25°C
360
W
PD
Derate Linearly
2.9
W/°C
TJ , TSTG
Operating and Storage Junction Temperature Range
TL
Lead Temperature : 0.063” from Case for 10 Sec.
–55 to 150
°C
300
STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated)
Characteristic
Drain – Source Breakdown Voltage
Test Conditions
VGS = 0V , ID = 250mA
Zero Gate Voltage Drain Current
VDS = VDSS
250
(VGS = 0V)
VDS = 0.8VDSS , TC = 125°C
1000
IGSS
Gate – Source Leakage Current
VGS = ±30V , VDS = 0V
±100
nA
VGS(TH)
Gate Threshold Voltage
VDS = VGS , ID = 1.0mA
4
V
ID(ON)
On State Drain Current 2
RDS(ON)
Drain – Source On State Resistance 2
BVDSS
IDSS
VDS > ID(ON) x RDS(ON) Max
VGS = 10V
VGS = 10V , ID = 0.5 ID [Cont.]
Min.
500
2
Typ.
Max. Unit
V
28
mA
A
0.20
W
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380mS , Duty Cycle < 2%
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Prelim. 6/94
SEME
SML5020BN
LAB
DYNAMIC CHARACTERISTICS
Characteristic
Test Conditions
Typ.
Max. Unit
Ciss
Input Capacitance
VGS = 0V
Min.
2890
3500
Coss
Output Capacitance
VDS = 25V
590
830
Crss
Reverse Transfer Capacitance
f = 1MHz
230
350
Qg
Total Gate Charge3
VGS = 10V
140
210
Qgs
Gate – Source Charge
VDD = 0.5 VDSS
18
27
Qgd
Gate – Drain (“Miller”) Charge
ID = ID [Cont.] @ 25°C
75
110
td(on)
Turn–on Delay Time
VGS = 15V
19
38
tr
Rise Time
VDD = 0.5 VDSS
43
86
td(off)
Turn-off Delay Time
ID = ID [Cont.] @ 25°C
85
125
tf
Fall Time
56
112
RG = 1.8W
pF
nC
ns
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic
Test Conditions
IS
Continuous Source Current
(Body Diode)
28
ISM
Pulsed Source Current1
(Body Diode)
112
VSD
Diode Forward Voltage2
VGS = 0V , IS = – ID [Cont.]
1.3
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IS = – ID [Cont.] , dls / dt = 100A/ms
IS = – ID [Cont.] , dls / dt = 100A/ms
Min.
Typ.
Max. Unit
A
215
430
860
ns
3
7
14
mC
Min.
Typ.
SAFE OPERATING AREA CHARACTERISTICS
Characteristic
SOA1
Safe Operating Area
SOA2
Safe Operating Area
ILM
Inductive Current Clamped
Test Conditions
VDS = 0.4VDSS , t = 1 Sec.
IDS = PD / 0.4VDSS
VDS = PD / ID [Cont.]
IDS = ID [Cont.] , t = 1 Sec.
Max. Unit
360
W
360
W
112
A
THERMAL CHARACTERISTICS
RqJC
RqJA
Characteristic
Junction to Case
Min.
Junction to Ambient
Typ.
Max. Unit
0.34
°C/W
40
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380mS , Duty Cycle < 2%
3) See MIL–STD–750 Method 3471
CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Prelim. 6/94