Data Sheet No. 2N3762 Generic Part Number: 2N3762 Type 2N3762 Geometry 6706 Polarity PNP Qual Level: JAN - JANTXV REF: MIL-PRF-19500/396 Features: • • • • General-purpose transistor for switching and amplifier applicatons. Housed in a TO-39 case. Also available in chip form using the 6706 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/396 which Semicoa meets in all cases. TO-39 Maximum Ratings o TC = 25 C unless otherwise specified Rating Symbol Rating Unit Collector-Emitter Voltage VCEO 40 V Collector-Base Voltage VCBO 40 V Emitter-Base Voltage VEBO 5.0 V Collector Current, Continuous IC 1.5 mA Operating Junction Temperature TJ -55 to +200 TSTG -55 to +200 Storage Temperature o C o C Data Sheet No. 2N3762 Electrical Characteristics TC = 25oC unless otherwise specified OFF Characteristics Symbol Min Max Unit V(BR)CBO 40 --- V V(BR)CEO 40 --- V V(BR)EBO 5.0 --- V ICEX1 --- 100 nA ICEX2 --- 150 µA ICBO1 --- 100 nA IEBO --- 200 nA Symbol Min Max Unit hFE1 hFE2 hFE3 hFE4 hFE5 hFE6 35 40 40 30 30 20 ----140 120 ----- ------------- VCE(sat)1 VCE(sat)2 VCE(sat)3 VCE(sat)4 --------- 0.1 0.22 0.50 0.90 V dc V dc V dc V dc VBE(sat)1 VBE(sat)2 VBE(sat)3 VBE(sat)4 --------- 0.8 1.0 1.2 1.4 V dc V dc V dc V dc Symbol Min Max Unit |hFE| 1.8 6.0 --- COBO --- 25 pF CIBO --- 80 pF Symbol Min Max Unit Pulse Delay Time td --- 8 ns Pulse Rise Time tr --- 35 ns Pulse Storage Time ts --- 80 ns Pulse Fall Time tf --- 35 ns Collector-Base Breakdown Voltage IC = 10 µA Collector-Emitter Breakdown Voltage IC = 10 mA Emitter-Base Breakdown Voltage IE = 10 µA Collector-Emitter Cutoff Current VEB = 2.0 V, VCE = 20 V Collector-Emitter Cutoff Current VEB = 2.0 V, VCE = 20 V, TA = 150oC Collector-Base Cutoff Current VCB = 20 V Emitter-Base Cutoff Current VEB = 2.0 V ON Characteristics Forward current Transfer Ratio IC = 10 mA, VCE = 1.0 V IC = 150 mA, VCE = 1.0 V (pulse test) IC = 500 mA, VCE = 1.0 V (pulse test) IC = 1.0 A, VCE = 1.5 V (pulse test) IC = 1.5 A, VCE = 5.0 V (pulse test) o IC = 5 mA, VCE = 1.0 V (pulsed), TA = -55 C Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1 mA (pulse test) IC = 150 mA, IC = 15 mA (pulse test) IC = 500 mA, IB = 50 mA (pulse test) IC = 1.0 A, IC = 100 mA (pulse test) Base-Emitter Saturation Voltage IC = 10 mA, IB = 1 mA IC = 150 mA, IB = 15 mA (pulse test) IC = 500 mA, IB = 50 mA (pulse test) IC = 1.0 A, IB = 100 mA (pulse test) Small Signal Characteristics Magnitude of Common Emitter Short Circuit Forward Current Transfer Ratio IC = 50 mA, VCE = 10 V, f = 100 MHz Open Circuit Output Capacitance VCB = 10 V, IE = 0, 100 kHz < f < 1 MHz Input Capacitance, Output Open Circuited VEB = 0.5 V, IC = 0, 100 kHz < f < 1 MHz Switching Characteristics Per Figure 1, MIL-S-19500/396D