Data Sheet No. 2N5003 Generic Part Number: 2N5003 Type 2N5003 Geometry 9702 Polarity PNP Qual Level: JAN - JANTXV REF: MIL-PRF-19500/512 Features: • • • • Silicon power transistor for use in high speed power switching applications. Housed in a TO-59 case. Also available in chip form using the 9702 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/512 which Semicoa meets in all cases. TO-59 Maximum Ratings o TC = 25 C unless otherwise specified Rating Symbol Rating Unit Collector-Emitter Voltage VCEO 80 V Collector-Base Voltage VCBO 100 V Emitter-Base Voltage VEBO 5.5 V Collector Current, Continuous IC 10 A Collector Current, PW < 8.3 ms, < 1% duty cycle IC 15 A 2 11.4 58 331 Watt mW/oC Watt o mW/ C Power Disipation TA = 25oC ambient Derate above 25oC Power Disipation TC = 25oC ambient o Derate above 25 C Operating Junction Temperature Storage Temperature PT PT TJ -55 to +200 o TSTG -55 to +200 o C C Data Sheet No. 2N5003 Electrical Characteristics TC = 25oC unless otherwise specified OFF Characteristics Thermal Impedance Collector-Emitter Breakdown Voltage IC = 100 mA, IB = 0, pulsed Collector-Emitter Cutoff Current VCE = 40 V, VBE = 0, Bias Condition D VCE = 60 V, VBE = 0, Bias Condition C VCE = 100 V, VBE = 0, Bias Condition C Collector-Emitter Cutoff Current VCE = 60 V, VBE = +2.0 V, TC = 150oC Base-Emitter Cutoff Current VEB = 4 V, IC = 0, Bias Condition D VEB = 5.5 V, IC = 0, Bias Condition D ON Characteristics Forward Current Transfer Ratio IC = 50 mA, VCE = 5 V IC = 2.5 A, VCE = 5 V, pulsed IC = 5.0 A, VCE = 5 V, pulsed IC = 2.5 A, VCE = 5 V pulsed, TA = -55oC Base-Emitter Voltage, Nonsaturted IC = 2.5 V, VCE = 5 V pulsed Base-Emitter Saturation Voltage IC = 2.5 A, IB = 250 mA, pulsed IC = 5 A, IB = 500 mA, pulsed Small Signal Characteristics Magnitude of Common Emitter Small Signal Short Circuit Forward Current Transfer Ratio VCE = 5 V, IC = 500 mA, f = 10 MHz Common Emitter, Small Signal Short Circuit Forward Current Transfer Ratio VCE = 5 V, IC = 100 mA, f = 1 kHz Open Circuit Output Capacitance VCB = 10 V, IE = 0, f = 1 MHz Switching Time Delay Time IC = 5 A, IB1 = 500 mA Storage Time IB2 = -500 mA Fall Time VBE(off) = 3.7 V Turn-Off Time RL = 6 ohms Symbol Min Max 3.1 Unit o C/W V(BR)CEO 80 --- V ICEO ICES1 ICES2 ------- 50 1.0 1.0 µA µA mA ICEX --- 500 µA IEBO1 IEBO2 ----- 1.0 1.0 µA mA Symbol Min Max Unit hFE1 hFE2 hFE3 hFE4 20 30 20 15 --90 ----- --------- VBE --- 1.45 V dc VBE(sat)1 VBE(sat)2 ----- 1.45 2.2 V dc V dc Symbol Min Max Unit |hfe| 6 --- --- hfe 20 --- --- COBO --- 250 pF Symbol Min Max Unit tON --- 0.5 µs ts --- 1.4 µs tf --- 0.5 µs tOFF --- 1.5 µs Data Sheet No. 2N5003 Maximum Ratings Switching Time