LH5164AV FEATURES CMOS 64K (8K × 8) Static RAM PIN CONNECTIONS • 8,192 × 8 bit organization • Access time: 200 ns (MAX.) TOP VIEW 28-PIN SOP • Supply current (MAX.): Operating: 248 mW 55 mW (tRC, tWC = 1 µs) Standby: 5.5 µW Data retention: 0.6 µW (VCC = 3 V, tA = 25°C) 1 28 A12 2 27 WE A7 3 26 CE2 A6 4 25 A8 A5 5 24 A9 A4 6 23 A11 A3 7 22 OE A2 8 21 A10 NC • Wide operating voltage range: 2.7 V to 5.5 V VCC A1 9 20 CE1 A0 10 19 I/O8 • Fully-static operation I/O1 11 18 I/O7 I/O2 12 17 I/O6 • TTL compatible I/O I/O3 13 16 I/O5 GND 14 15 I/O4 • Three-state outputs 5164AV-1 • Packages: 28-pin, 450-mil SOP 28-pin, 8 × 13 mm2 TSOP (Type I) Figure 1. Pin Connections for SOP Package 28-PIN TSOP (Type I) TOP VIEW DESCRIPTION The LH5164AV is a static RAM organized as 8,192 × 8 bits. It is fabricated using silicon-gate CMOS process technology. OE 1 28 A11 2 27 CE1 A9 3 26 I/O8 A8 4 25 I/O7 CE2 5 24 I/O6 WE VCC 6 23 I/O5 7 22 I/O4 A10 NC 8 21 GND A12 9 20 I/O3 A7 10 19 I/O2 A6 11 18 I/O1 A5 12 17 A0 A4 13 16 A1 A3 14 15 A2 5164AV-2 Figure 2. Pin Connections for TSOP Package 1 CMOS 64K (8K × 8) Static RAM LH5164AV A9 24 28 VCC A8 25 A12 2 14 GND A7 3 MEMORY ARRAY (256 x 256) ROW SELECT A6 4 A5 5 A4 6 A3 7 I/O1 11 I/O2 12 I/O3 13 I/O4 15 COLUMN I/O CIRCUITS INPUT DATA CONTROL I/O5 16 I/O6 17 I/O7 18 I/O8 19 COLUMN SELECT WE 27 OE 22 CE2 26 CE1 20 8 A2 9 A1 10 A0 23 A11 21 A10 NOTE: Pin numbers apply to the 28-pin SOP. 5164AV-3 Figure 3. LH5164AV Block Diagram PIN DESCRIPTION SIGNAL A0 - A12 2 PIN NAME Address inputs SIGNAL I/O1 - I/O8 PIN NAME Data inputs and outputs CE1/CE2 Chip Enable input VCC Power supply WE Write Enable input GND Ground OE Output Enable input NC No connection CMOS 64K (8K × 8) Static RAM LH5164AV TRUTH TABLE CE1 CE2 WE OE H X X X X L X X MODE I/O 1 - I/O 8 SUPPLY CURRENT NOTE Standby High-Z Standby (ISB) 1 1 L H L X Write Data input Operating (ICC) L H H L Read Data output Operating (ICC) L H H H Output disable High-Z Operating (ICC) NOTE: 1. X = H or L ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT NOTE Supply voltage VCC –0.3 to +7.0 V 1 Input voltage VIN –0.3 to VCC +0.3 V 1, 2 Operating temperature Topr –10 to +70 °C Storage temperature Tstg –65 to +150 °C NOTES: 1. The maximum applicable voltage on any pin with respect to GND. 2. VIN (MIN.) = –3.0 V for pulse width ≤50 ns. RECOMMENDED OPERATING CONDITIONS (TA = –10°C to +70°C) PARAMETER SYMBOL MIN. Supply voltage VCC Input voltage (VCC = 2.7 V to 3.6 V) Input voltage (VCC = 4.5 V to 5.5 V) TYP. MAX. UNIT 2.7 5.5 V VIH VCC – 0.5 VCC + 0.3 V VIL –0.3 0.2 V VIH 2.2 VCC + 0.3 V VIL –0.3 0.8 V NOTE 1 1 NOTE: 1. VIL (MIN.) = –3.0 V for pulse width ≤50 ns. 3 CMOS 64K (8K × 8) Static RAM LH5164AV DC CHARACTERISTICS 1 (TA = –10°C to +70°C, VCC = 2.7 V to 5.5 V) PARAMETER SYMBOL CONDITIONS MIN. MAX. UNIT Input leakage current ILI VIN = 0 V to VCC –1.0 1.0 µA Output leakage current ILO CE1 = VIH or CE2 = VIL or OE = VIH or WE = VIL VI/O = 0 to VCC –1.0 1.0 µA Operating supply current ICC CE1 = 0.2 V, VIN = 0.2 V, or VCC – 0.2 V CE2 = VCC – 0.2 V, Outputs open, VCC = 2.7 V to 3.6 V tCYCLE = 200 ns 20 tCYCLE = 1.0 µs 8 tCYCLE = 200 ns 45 tCYCLE = 1.0 µs 10 V CC = 2.7 V to 3.6 V 0.6 V CC = 4.5 V to 5.5 V 1.0 CE1 = VIL, VIN = VIL or VIH CE2 = VIH, Outputs open, VCC = 4.5 V to 5.5 V Standby current ISB ISB1 VOL Output voltage VOH CE2 ≤ 0.2 V or CE1 ≥ VCC – 0.2 V 4 mA µA CE1 = VIH or CE2 = VIL 5 IOL = 500 µA, VCC = 2.7 V to 3.6 V 0.4 IOL = 2.1 mA, VCC = 4.5 V to 5.5 V 0.4 IOH = –500 µA, VCC = 2.7 V to 3.6 V VCC – 0.5 IOH = –1.0 mA, VCC = 4.5 V to 5.5 V 2.4 NOTE: 1. CE2 should be ≥ VCC – 0.2 V or ≤0.2 V when CE1 ≥ VCC – 0.2 V. NOTE mA V V 1 CMOS 64K (8K × 8) Static RAM LH5164AV READ CYCLE (TA = –10°C to +70°C, VCC = 2.7 V to 5.5 V) PARAMETER Read cycle time Address access time SYMBOL MIN. tRC 200 MAX. UNIT ns tAA 200 ns CE 1 access time tACE1 200 ns CE 2 access time tACE2 200 ns Output enable access time tOE 150 ns Output hold time tOH 10 ns CE 1 Low to output in Low-Z tLZ1 20 ns CE 2 High to output in Low-Z tLZ2 20 ns OE Low to output in Low-Z tOLZ 10 ns CE 1 High to output in High-Z tHZ1 0 60 ns CE 2 Low to output in High-Z tHZ2 0 60 ns OE High to output in High-Z tOHZ 0 40 ns WRITE CYCLE (TA = –10°C to +70°C, VCC = 2.7 V to 5.5 V) PARAMETER SYMBOL MIN. tWC 200 ns CE Low to end of write tCW 180 ns Address valid to end of write tAW 180 ns Address setup time tAS 0 ns Write pulse width tWP 150 ns Write recovery time tWR 0 ns Input data setup time tDW 100 ns Write cycle time MAX. UNIT Input data hold time tDH 0 ns WE High to output in Low-Z tOW 20 ns WE Low to output in High-Z tWZ 0 60 ns OE High to output in High-Z tOHZ 0 40 ns TEST CONDITIONS PARAMETER MODE Input pulse level NOTE 0.2 V to VCC – 0.2 V Input rise/fall time 10 ns Input/output timing level 1.5 V Output load CL (100 pF) 1 NOTE: 1. Includes scope and jig capacitance. CAPACITANCE 1 (TA = 25°C, f = 1 MHz) PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNIT Input capacitance CIN VIN = 0 V 7 pF I/O capacitance CI/O VI/O = 0 V 10 pF NOTE: 1. This parameter is sampled and not production tested. 5 CMOS 64K (8K × 8) Static RAM LH5164AV DATA RETENTION CHARACTERISTICS (TA = –10°C to +70°C) PARAMETER SYMBOL CONDITIONS MIN. MAX. UNIT NOTE Data retention supply voltage VCCDR CE2 ≤ 0.2 V or CE1 ≥ VCCDR – 0.2 V 2.0 5.5 V 1 TA = 25°C 0.2 µA TA = 40°C 0.4 µA 0.6 µA VCCDR = 3 V, CE2 ≤ 0.2 V or CE1 ≥ VCCDR – 0.2 V Data retention supply current ICCDR Chip disable to data retention tCDR 0 ns tR tRC ns Recovery time 1 2 NOTES: 1. CE2 should be ≥ VCCDR – 0.2 V or ≤ 0.2 V when CE1 ≥ VCCDR – 0.2 V. 2. t RC = Read cycle time. CE1 CONTROL (NOTE) DATA RETENTION MODE VCC 2.7 V tCDR tR VCC - 0.5 V VCCDR CE1 ≥ VCCDR - 0.2 V CE1 0V CE2 CONTROL DATA RETENTION MODE VCC 2.7 V CE2 tR tCDR VCCDR 0.2 V 0V CE2 ≤ 0.2 V NOTE: To control the data retention mode at CE1, fix the input level of CE2 between VCCDR to VCCDR - 0.2 V or 0 V and 0.2 V during the data retention mode. 5164AV-7 Figure 4. Data Retention Characteristics 6 CMOS 64K (8K × 8) Static RAM LH5164AV tRC A0 - A12 tAA tACE1 CE1 tLZ1 tACE2 tHZ1 CE2 tLZ2 tHZ2 tOE tOLZ OE tOHZ DOUT DATA VALID tOH NOTE: WE = 'HIGH.' 5164AV-4 Figure 5. Read Cycle 7 CMOS 64K (8K × 8) Static RAM LH5164AV tWC A0 - A12 OE tAW tWR tCW (NOTE 1) (NOTE 2) tCW tWR CE1 CE2 tAS tWP (NOTE 3) (NOTE 4) tWR WE tOHZ DOUT tDW DIN (NOTE 5) DATA VALID NOTES: 1. tCW is defined as the time from the last occuring transition, either CE1 LOW transition or CE2 HIGH transition, to the time when the writing is finished. 2. tWR is defined as the time from writing finish to address change. 3. tAS is defined as the time from address change to writing start. 4. The writing occurs during an overlapping period of CE1 = 'LOW,' CE2 = 'HIGH,' and WE = 'LOW' (tWP). 5. When I/O pins are in the output state, input signals with the opposite logic level must not be applied. Figure 6. Write Cycle (OE Controlled) 8 tDH 5164AV-5 CMOS 64K (8K × 8) Static RAM LH5164AV tWC A0 - A12 tAW tCW tWR (NOTE 1) (NOTE 2) tCW tWR CE1 CE2 tAS tWP (NOTE 3) (NOTE 4) tWR WE tWZ tOW (NOTE 6) (NOTE 5) DOUT tDW DIN tDH (NOTE 7) DATA VALID NOTES: 1. tCW is defined as the time from the last occuring transition, either CE1 LOW transition or CE2 HIGH transition, to the time when the writing is finished. 2. tWR is defined as the time from writing finish to address change. 3. tAS is defined as the time from address change to writing start. 4. The writing occurs during an overlapping period of CE1 = 'LOW,' CE2 = 'HIGH,' and WE = 'LOW' (tWP). 5. If CE1 LOW transition or CE2 HIGH transition occurs at the same time or after WE LOW transition, the outputs will remain high-impedance. 6. If CE1 HIGH transition or CE2 LOW transition occurs at the same time or before WE HIGH transition, the outputs will remain high-impedance. 7. When I/O pins are in the output state, input signals with the opposite logic level must not be applied. 5164AV-6 Figure 7. Write Cycle (OE Low Fixed) 9 CMOS 64K (8K × 8) Static RAM LH5164AV PACKAGE DIAGRAMS 28SOP (SOP028-P-0450) 0.50 [0.020] 0.30 [0.012] 1.27 [0.050] TYP. 1.70 [0.067] 28 15 8.80 [0.346] 8.40 [0.331] 1 12.40 [0.488] 11.60 [0.457] 10.60 [0.417] 14 1.70 [0.067] 0.20 [0.008] 0.10 [0.004] 18.20 [0.717] 17.80 [0.701] 0.15 [0.006] 1.025 [0.040] 2.40 [0.094] 2.00 [0.079] 0.20 [0.008] 0.00 [0.000] 1.025 [0.040] DIMENSIONS IN MM [INCHES] MAXIMUM LIMIT MINIMUM LIMIT 28SOP 28-pin, 450-mil SOP 10 CMOS 64K (8K × 8) Static RAM LH5164AV 28TSOP (TSOP028-P-0813) 0.28 [0.011] 0.12 [0.005] 0.55 [0.022] TYP. 28 15 12.00 [0.472] 11.60 [0.457] 1 13.70 [0.539] 13.10 [0.516] 12.60 [0.496] 12.20 [0.480] 14 8.20 [0.323] 7.80 [0.307] 0.20 [0.008] 0.10 [0.004] 0.15 [0.006] DETAIL 1.10 [0.043] 0.90 [0.035] 1.20 [0.047] MAX. 0.425 [0.017] 0.20 [0.008] 0.00 [0.000] DIMENSIONS IN MM [INCHES] 0 - 10° 0.425 [0.017] 1.10 [0.043] 0.90 [0.035] 0.20 [0.008] 0.00 [0.000] MAXIMUM LIMIT MINIMUM LIMIT 28TSOP 28-pin, 8 × 13 mm2 TSOP (Type I) ORDERING INFORMATION LH5164AV Device Type X Package N 28-pin, 450-mil SOP (SOP028-P-0450) T 28-pin, 8 x 13 mm2 TSOP (Type I) (TSOP028-P-0813) CMOS 64K (8K x 8) Static RAM Example: LH5164AVN (CMOS 64K (8K x 8) Static RAM, 28-pin, 450-mil SOP) 5164AV-8 11