LH52256C/CH FEATURES • 32,768 × 8 bit organization • Access time: 70 ns (MAX.) CMOS 256K (32K × 8) Static RAM PIN CONNECTIONS TOP VIEW 28-PIN DIP 28-PIN SK-DIP 28-PIN SOP • Supply current: Operating: 45 mA (MAX.) 10 mA (MAX.) (tRC, tWC = 1 µs) Standby: 40 µA (MAX.) • Data retention current: 1.0 µA (MAX.) (VCCDR = 3 V, TA = 25°C) • Wide operating voltage range: 4.5 V ± 5.5 V • Operating temperature: Commerical temperature 0°C to +70°C Industrial temperature -40° to +85°C A14 1 28 VCC A12 2 27 WE A7 3 26 A13 A6 4 25 A8 A5 5 24 A9 A4 6 23 A11 A3 7 22 OE A2 8 21 A10 A1 9 20 CE A0 10 19 I/O8 I/O7 I/O1 11 18 I/O2 12 17 I/O6 I/O3 13 16 I/O5 GND 14 15 I/O4 52256C-1 • Fully-static operation Figure 1. Pin Connections • Three-state outputs • Not designed or rated as radiation hardened • Package: 28-pin, 600-mil DIP 28-pin, 450-mil SOP 28-pin, 300-mil SK-DIP 28-pin, 8 × 3 mm2 TSOP (Type I) • N-type bulk silicon DESCRIPTION The LH52256C is a Static RAM organized as 32,768 × 8 bits which provides low-power standby mode. It is fabricated using silicon-gate CMOS process technology. 28-PIN TSOP (Type I) OE 1 28 A10 A11 2 27 CE A9 3 26 I/O8 A8 4 25 I/O7 I/O6 A13 5 24 WE VCC 6 23 I/O5 7 22 I/O4 A14 8 21 GND A12 9 20 I/O3 A7 10 19 I/O2 A6 11 18 I/O1 A5 12 17 A0 A4 13 16 A1 A3 14 15 A2 NOTE: Reverse bend available on request. 52256C-8 Figure 2. TSOP (Type I) Pin Connections 1 CMOS 256K (32K × 8) Static RAM LH52256C/CH A8 25 A14 1 A13 26 A12 2 A7 3 ROW DECORDER A6 4 MEMORY ARRAY (512 x 512) 28 VCC 14 GND A5 5 A4 6 A3 7 11 I/O1 12 I/O2 COLUMN I/O CIRCUIT COLUMN DECODER 8 13 I/O3 15 I/O4 OUTPUT BUFFERS 8 16 I/O5 17 I/O6 18 I/O7 19 I/O8 INPUT DATA CONTROL WE 27 OE 22 CE 20 10 9 8 21 24 23 A0 A1 A2 A10 A9 A11 52256C-2 Figure 3. LH52256C Block Diagram PIN DESCRIPTION SIGNAL A0 - A14 2 PIN NAME Address inputs SIGNAL I/O1 - I/O8 PIN NAME Data inputs and outputs CE Chip enable VCC Power supply WE Write enable GND Ground OE Output enable CMOS 256K (32K × 8) Static RAM LH52256C/CH TRUTH TABLE CE WE OE MODE I/O1 - I/O8 SUPPLY CURRENT NOTE H X X Standby High impedance Standby (ISB ) 1 L H L Read Data output Active (ICC) 1 L H H Output disable High impedance Active (ICC) 1 L L X Write Data input Active (ICC) 1 NOTE: 1. X = Don’t care, L = Low, H = High ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT NOTE Supply voltage VCC –0.5 to +7.0 V 1 Input voltage VIN –0.5 to VCC + 0.5 V 1, 2 Operating temperature TOPR 0 to +70 °C Storage temperature TSTG –65 to +150 °C NOTES: 1. The maximum applicable voltage on any pin with respect to GND. 2. Undershoot of -3.0 V is allowed width of pulse below 50 ns. RECOMMENDED DC OPERATING CONDITIONS (TA = 0°C to +70°C) PARAMETER Supply voltage Input voltage SYMBOL MIN. TYP. MAX. UNIT NOTE VCC 4.5 5.0 5.5 V VIH 2.2 VCC + 0.5 V VIL –0.5 0.8 V 1 NOTE: 1. Undershoot of -3.0 V is allowed width of pulse below 50 ns. 3 CMOS 256K (32K × 8) Static RAM LH52256C/CH DC ELECTRICAL CHARACTERISTICS (TA = 0°C to +70°C, VCC = 4.5 V to 5.5 V) PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNIT Input leakage current ILI VIN = 0 V to VCC –1.0 1.0 µA Output leakage current ILO CE = VIH or OE = VIH VI/O = 0 V to VCC –1.0 1.0 µA ICC Minimum cycle, VIN = VIL or VIH II/O = 0 mA, CE = VIL 25 45.0 ICC1 tRC, tWC = 1 µs, VIN = VIL or VIH, II/O = 0 mA, CE = VIL 10.0 ISB CE ≥ VCC – 0.2 V 0.6 40.0 µA ISB1 CE = VIH 3.0 mA VOL IOL = 2.1 mA 0.4 VOH IOH = -1.0 mA 2.4 Operating supply current Standby current Output voltage mA NOTE: Typical values at VCC = 5.0 V, TA = 25°C AC ELECTRICAL CHARACTERISTICS AC Test Conditions PARAMETER MODE NOTE 0.6 V to 2.4 V Input rise and fall time 10 ns Input and output timing Ref. level 1.5 V 1 TTL + CL (100 pF) 1 Input pulse level Output load NOTE: 1. Including scope and jig capacitance. READ CYCLE (TA = 0°C to +70°C, VCC = 4.5 V to 5.5 V) PARAMETER SYMBOL MIN. MAX. UNIT NOTE Read cycle time tRC 70 ns Address access time tAA 70 ns CE access time tACE 70 ns Output enable to output valid tOE 35 ns Output hold from address change tOH 10 ns CE Low to output active tLZ 10 ns 1 OE Low to output active tOLZ 5 ns 1 CE High to output in High impedance tHZ 0 30 ns 1 OE High to output in High impedance tOHZ 0 30 ns 1 NOTES: 1. Active output to high-impedance and high-impedance to output active tests specified for a ±200 mV transition from steady state levels into the test load. 4 V CMOS 256K (32K × 8) Static RAM LH52256C/CH WRITE CYCLE (TA = 0°C to +70°C, VCC = 4.5 V to 5.5 V) PARAMETER SYMBOL MIN. MAX. UNIT NOTE Write cycle time tWC 70 ns CE Low to end of write tCW 45 ns Address valid to end of write tAW 45 ns Address setup time tAS 0 ns Write pulse width tWP 35 ns Write recovery time tWR 0 ns Input data setup time tDW 30 ns Input data hold time tDH 0 ns WE High to output active tOW 5 ns 1 WE Low to output in High impedance tWZ 0 30 ns 1 OE High to output in High impedance tOHZ 0 30 ns 1 NOTE: 1. Active output to high-impedance and high-impedance to output active tests specified for a ±200 mV transition from steady state levels into the test load. CAPACITANCE (TA = 25°C, f = 1MHz) PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNIT NOTE Input capacitance CIN VIN = 0 V 7 pF 1 I/O capacitance CI/O VI/O = 0 V 10 pF 1 NOTE: 1. This parameter is sampled and not production tested. DATA RETENTION CHARACTERISTICS (TA = 0°C to +70°C) PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNIT NOTE Data retention supply voltage VCCDR CE ≥ VCCDR – 0.2 V 2.0 5.5 V TA = 25°C 0.3 1.0 TA = 40°C 3.0 VCCDR = 3.0 V Data retention supply current ICCDR CE ≥ VCCDR – 0.2 V Chip enable setup time Chip enable hold time µA 15 tCDR 0 ns tR tRC ns 1 NOTE: 1. t RC = Read cycle time. 2. Typical values at TA = 25°C 5 CMOS 256K (32K × 8) Static RAM LH52256C/CH tRC ADDRESS tAA tACE CE tLZ tHZ tOE OE tOLZ tOHZ tOH DATA VALID DOUT NOTE: WE is HIGH for Read Cycle. 52256C-3 Figure 4. Read Cycle 6 CMOS 256K (32K × 8) Static RAM LH52256C/CH tWC ADDRESS OE tAW tWR (NOTE 4) tWR (NOTE 4) tCW (NOTE 2) CE tAS tWP (NOTE 3) (NOTE 1) WE tOHZ (NOTE 6) DOUT tDW tDH (NOTE 5) DATA VALID DIN NOTES: 1. A write occurs during the overlap of a LOW CE, and a LOW WE. A write begins at the latest transition among CE going LOW, and WE going LOW. A write ends at the earliest transition among CE going HIGH, and WE going HIGH. tWP is measured from the beginning of write to the end of write. 2. tCW is measured from the later of CE going LOW to the end of write. 3. tAS is measured from the address valid to the beginning of write. 4. tWR is measured from the end of write to the address change. 5. During this period, I/O pins are in the output state, therefore the input signals of opposite phase to the outputs must not be applied. 6. If CE goes LOW simultaneously with WE going LOW or after WE going LOW, the outputs remain in high impedance state. 7. If CE goes HIGH simulaneously with WE going HIGH or before WE going HIGH, the outputs remain in high impedance state. 52256C-4 Figure 5. Write Cycle (OE Controlled) 7 CMOS 256K (32K × 8) Static RAM LH52256C/CH tWC ADDRESS tAW tWR tCW (NOTE 4) (NOTE 2) CE tWR tAS tWP (NOTE 3) (NOTE 1) (NOTE 4) WE tWZ (NOTE 6) tOW (NOTE 7) DOUT tDW (NOTE 5) DIN tDH DATA VALID NOTES: 1. A write occurs during the overlap of a LOW CE, and a LOW WE. A write begins at the latest transition among CE going LOW, and WE going LOW. A write ends at the earliest transition among CE going HIGH, and WE going HIGH. tWP is measured from the beginning of write to the end of write. 2. tCW is measured from the later of CE going LOW to the end of write. 3. tAS is measured from the address valid to the beginning of write. 4. tWR is measured from the end of write to the address change. 5. During this period, I/O pins are in the output state, therefore the input signals of opposite phase to the outputs must not be applied. 6. If CE goes LOW simultaneously with WE going LOW or after WE going LOW, the outputs remain in high impedance state. 7. If CE goes HIGH simulaneously with WE going HIGH or before WE going HIGH, the outputs remain in high impedance state. 52256C-5 Figure 6. Write Cycle (OE Low Fixed) CE CONTROL DATA RETENTION MODE VCC 4.5 V tCDR tR 2.2 V VCCDR CE ≥ VCCDR - 0.2 V CE 0V 52256C-6 Data Retention Timing Chart CE Controlled 8 CMOS 256K (32K × 8) Static RAM LH52256C/CH PACKAGE DIAGRAMS 28DIP (DIP028-P-0600) 28 15 DETAIL 13.45 [0.530] 12.95 [0.510] 1 0° TO 15° 14 0.30 [0.012] 0.20 [0.008] 36.30 [1.429] 35.70 [1.406] 15.24 [0.600] TYP. 4.50 [0.177] 4.00 [0.157] 5.20 [0.205] 5.00 [0.197] 3.50 [0.138] 3.00 [0.118] 0.51 [0.020] MIN. 0.60 [0.024] 0.40 [0.016] 2.54 [0.100] TYP. DIMENSIONS IN MM [INCHES] MAXIMUM LIMIT MINIMUM LIMIT 28DIP-2 28SOP (SOP028-P-0450) 0.50 [0.020] 0.30 [0.012] 1.27 [0.050] TYP. 1.70 [0.067] 28 15 8.80 [0.346] 8.40 [0.331] 1 12.40 [0.488] 11.60 [0.457] 10.60 [0.417] 14 1.70 [0.067] 0.20 [0.008] 0.10 [0.004] 18.20 [0.717] 17.80 [0.701] 0.15 [0.006] 1.025 [0.040] 2.40 [0.094] 2.00 [0.079] 0.20 [0.008] 0.00 [0.000] 1.025 [0.040] DIMENSIONS IN MM [INCHES] MAXIMUM LIMIT MINIMUM LIMIT 28SOP 9 CMOS 256K (32K × 8) Static RAM LH52256C/CH 28SDIP (SDIP28-P-400) DETAIL 28 15 8.80 [0.346] 8.40 [0.331] 1 0° TO 15° 14 0.30 [0.012] 0.20 [0.008] 25.75 [1.014] 25.25 [0.994] 10.16 [0.400] TYP. 4.05 [0.159] 3.65 [0.144] 4.60 [0.181] 4.20 [0.205] 3.50 [0.138] 3.00 [0.118] 0.51 [0.020] MIN 1.78 [0.070] TYP. 0.56 [0.022] 0.36 [0.014] DIMENSIONS IN MM [INCHES] MAXIMUM LIMIT MINIMUM LIMIT 28SDIP 28TSOP (TSOP028-P-0813) 0.28 [0.011] 0.12 [0.005] 0.55 [0.022] TYP. 28 15 12.00 [0.472] 11.60 [0.457] 1 13.70 [0.539] 13.10 [0.516] 12.60 [0.496] 12.20 [0.480] 14 8.20 [0.323] 7.80 [0.307] 0.20 [0.008] 0.10 [0.004] 0.15 [0.006] DETAIL 1.10 [0.043] 0.90 [0.035] 1.20 [0.047] MAX. 0.425 [0.017] 0.20 [0.008] 0.00 [0.000] DIMENSIONS IN MM [INCHES] 10 MAXIMUM LIMIT MINIMUM LIMIT 0 - 10° 0.425 [0.017] 1.10 [0.043] 0.90 [0.035] 0.20 [0.008] 0.00 [0.000] 28TSOP CMOS 256K (32K × 8) Static RAM LH52256C/CH ORDERING INFORMATION LL - ## X LH52256C X Device Type Operating Package Speed Power Temp Low-Low-power standby 70 Access Time (ns) Blank 28-pin, 600-mil DIP (DIP028-P-0600) D 28-pin, 300-mil SK-DIP (DIP028-P-0300) N 28-pin, 450-mil SOP (SOP028-P-0450) T 28-pin, 8 x 13 mm2 TSOP (Type I) (TSOP028-P-0813) Blank 0° to +70°C H -4° to +85°C CMOS 32K x 8 Static RAM Example: LH52256C-70LL (CMOS 32K x 8 Static RAM, Low-Low-power standby, 70 ns, 28-pin, 600-mil DIP) 52256C-7 11