TC426 TC427 TC428 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS 2 FEATURES GENERAL DESCRIPTION ■ High-Speed Switching (CL = 1000pF) ........... 30nsec ■ High Peak Output Current ................................. 1.5A ■ High Output Voltage Swing .................. VDD – 25mV GND + 25mV ■ Low Input Current (Logic "0" or "1") ................ 1µA ■ TTL/CMOS Input Compatible ■ Available in Inverting and Noninverting Configurations ■ Wide Operating Supply Voltage ............ 4.5V to 18V ■ Current Consumption — Inputs Low .................................................. 0.4mA — Inputs High .................................................... 8mA ■ Single Supply Operation ■ Low Output Impedance ........................................ 6Ω ■ Pinout Equivalent of DS0026 and MMH0026 ■ Latch-Up Resistant: Withstands > 500mA Reverse Current ■ ESD Protected ......................................................2kV The TC426/TC427/TC428 are dual CMOS high-speed drivers. A TTL/CMOS input voltage level is translated into a rail-to-rail output voltage level swing. The CMOS output is within 25 mV of ground or positive supply. The low impedance, high-current driver outputs swing a 1000pF load 18V in 30nsec. The unique current and voltage drive qualities make the TC426/TC427/TC428 ideal power MOSFET drivers, line drivers, and DC-to-DC converter building blocks. Input logic signals may equal the power supply voltage. Input current is a low 1µA, making direct interface to CMOS/bipolar switch-mode power supply control ICs possible, as well as open-collector analog comparators. Quiescent power supply current is 8mA maximum. The TC426 requires 1/5 the current of the pin-compatible bipolar DS0026 device. This is important in DC-to-DC converter applications with power efficiency constraints and high-frequency switch-mode power supply applications. Quiescent current is typically 6mA when driving a 1000pF load 18V at 100kHz. The inverting TC426 driver is pin-compatible with the bipolar DS0026 and MMH0026 devices. The TC427 is noninverting; the TC428 contains an inverting and noninverting driver. Other pin compatible driver families are the TC1426/ 27/28, TC4426/27/28, and TC4426A/27A/28A. PIN CONFIGURATIONS (DIP and SOIC) NC 1 8 NC IN A 2 7 OUT A TC426 GND 3 IN B 4 2, 4 7, 5 INVERTING 5 OUT B NC 1 8 NC IN A 2 GND 3 6 VDD 7 OUT A TC427 IN B 4 5 ORDERING INFORMATION 2 7 4 5 Part No. Package Configuration TC426COA TC426CPA TC426EOA TC426EPA TC426IJA TC426MJA TC427COA TC427CPA TC427EOA TC427EPA TC427IJA TC427MJA TC428COA TC428CPA TC428EOA TC428EPA TC428IJA TC428MJA 8-Pin SOIC 8-Pin PDIP 8-Pin SOIC 8-Pin SOIC 8-Pin CerDIP 8-Pin CerDIP 8-Pin SOIC 8-Pin PDIP 8-Pin SOIC 8-Pin SOIC 8-Pin CerDIP 8-Pin CerDIP 8-Pin SOIC 8-Pin PDIP 8-Pin SOIC 8-Pin SOIC 8-Pin CerDIP 8-Pin CerDIP Inverting Inverting Inverting Complementary Inverting Inverting Noninverting Noninverting Noninverting Complementary Noninverting Noninverting Complementary Complementary Complementary Complementary Complementary Complementary Temperature Range 7 OUT A TC428 6 VDD 5 OUT B COMPLEMENTARY NC = NO INTERNAL CONNECTION FUNCTIONAL BLOCK DIAGRAM V+ 500µA 4 7, 5 NONINVERTING 8 NC IN A 2 IN B 4 2, 4 3 5 OUT B NC 1 GND 3 6 VDD 1 TC426 TC427 TC428 2.5mA NONINVERTING OUTPUT INVERTING OUTPUT (TC427) (TC426) INPUT Note: The TC428 has one inverting and one noninverting driver. Ground any unused driver input. 0°C to +70°C 0°C to +70°C –40°C to +85°C –40°C to +85°C –25°C to +85°C –55°C to +125°C 0°C to +70°C 0°C to +70°C –40°C to +85°C –40°C to +85°C –25°C to +85°C –55°C to +125°C 0°C to +70°C 0°C to +70°C –40°C to +85°C –40°C to +85°C –25°C to +85°C –55°C to +125°C TC426/7/8-7 10/11/96 TELCOM SEMICONDUCTOR, INC. 4-169 6 7 8 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC426 TC427 TC428 ABSOLUTE MAXIMUM RATINGS* Supply Voltage ......................................................... +20V Input Voltage, Any Terminal .... VDD + 0.3V to GND – 0.3V Power Dissipation (TA ≤ 70°C) Plastic ...............................................................730mW CerDIP ..............................................................800mW SOIC .................................................................470mW Derating Factor Plastic ............................................................. 8mW/°C CerDIP ......................................................... 6.4mW/°C SOIC ............................................................... 4mW/°C Operating Temperature Range C Version ................................................. 0°C to +70°C I Version .............................................. – 25°C to +85°C E Version ............................................ – 40°C to +85°C M Version .......................................... – 55°C to +125°C Maximum Chip Temperature ................................. +150°C Storage Temperature Range ................ – 65°C to +150°C Lead Temperature (Soldering, 10 sec) ................. +300°C ELECTRICAL CHARACTERISTICS: TA = +25°C with 4.5V ≤ VDD ≤ 18V, unless otherwise specified. Symbol Test Conditions Min Typ Max Unit 0V ≤ VIN ≤ VDD 2.4 — –1 — — — — 0.8 1 V V µA VDD – 0.025 — — — — — — 10 6 1.5 — 0.025 15 10 — V V Ω Ω A Parameter Input VIH VIL IIN Logic 1, High Input Voltage Logic 0, Low Input Voltage Input Current Output VOH VOL ROH ROL IPK High Output Voltage Low Output Voltage High Output Resistance Low Output Resistance Peak Output Current IOUT = 10 mA, VDD = 18V IOUT = 10 mA, VDD = 18V Switching Time (Note 1) tR tF tD1 tD2 Rise Time Fall Time Delay Time Delay Time Test Figure 1/2 Test Figure 1/2 Test Figure 1/2 Test Figure 1/2 — — — — — — — — 30 30 50 75 nsec nsec nsec nsec Power Supply Current VIN = 3V (Both Inputs) VIN = 0V (Both Inputs) — — — — 8 0.4 mA mA Power Supply IS ELECTRICAL CHARACTERISTICS: Over Operating Temperature Range with 4.5V ≤ VDD ≤ 18V, unless otherwise specified. Input VIH VIL IIN Logic 1, High Input Voltage Logic 0, Low Input Voltage Input Current 0V ≤ VIN ≤ VDD 2.4 — –10 — — — — 0.8 10 V V µA VDD – 0.025 — — — — — 13 8 — 0.025 20 15 V V Ω Ω Output VOH VOL ROH ROL High Output Voltage Low Output Voltage High Output Resistance Low Output Resistance IOUT = 10 mA, VDD = 18V IOUT = 10 mA, VDD = 18V Switching Time (Note 1) tR tF tD1 tD2 Rise Time Fall Time Delay Time Delay Time Test Figure 1/2 Test Figure 1/2 Test Figure 1/2 Test Figure 1/2 — — — — — — — — 60 30 75 120 nsec nsec nsec nsec Power Supply Current VIN = 3V (Both Inputs) VIN = 0V (Both Inputs) — — — — 12 0.6 mA mA Power Supply IS NOTE: 1. Switching times guaranteed by design. 4-170 TELCOM SEMICONDUCTOR, INC. 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC426 TC427 TC428 *Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may effect device reliability. 1 2 SUPPLY BYPASSING Charging and discharging large capacitive loads quickly requires large currents. For example, charging a 1000-pF load to18V in 25nsec requires an 0.72A current from the device power supply. To guarantee low supply impedance over a wide frequency range, a parallel capacitor combination is recommended for supply bypassing. Low-inductance ceramic disk capacitors with short lead lengths (< 0.5 in.) should be used. A 1 µF film capacitor in parallel with one or two 0.1 µF ceramic disk capacitors normally provides adequate bypassing. GROUNDING The TC426 and TC428 contain inverting drivers. Ground potential drops developed in common ground impedances from input to output will appear as negative feedback and degrade switching speed characteristics. Individual ground returns for the input and output circuits or a ground plane should be used. INPUT STAGE The input voltage level changes the no-load or quiescent supply current. The N-channel MOSFET input stage transistor drives a 2.5mA current source load. With a logic "1" input, the maximum quiescent supply current is 8 mA. Logic "0" input level signals reduce quiescent current to 0.4 mA maximum. Minimum power dissipation occurs for logic "0" inputs for the TC426/427/428. Unused driver inputs must be connected to VDD or GND. The drivers are designed with 100 mV of hysteresis. This provides clean transitions and minimizes output stage current spiking when changing states. Input voltage thresholds are approximately 1.5V, making the device TTL compatible over the 4.5V to 18V supply operating range. Input current is less than 1 µA over this range. The TC426/427/428 may be directly driven by the TL494, SG1526/1527, SG1524, SE5560, and similar switchmode power supply integrated circuits. POWER DISSIPATION The supply current vs frequency and supply current vs capacitive load characteristic curves will aid in determining power dissipation calculations. TELCOM SEMICONDUCTOR, INC. The TC426/427/428 CMOS drivers have greatly reduced quiescent DC power consumption. Maximum quiescent current is 8 mA compared to the DS0026 40 mA specification. For a 15V supply, power dissipation is typically 40 mW. 3 Two other power dissipation components are: • Output stage AC and DC load power. • Transition state power. Output stage power is: Po = PDC + PAC = Vo (IDC) + f CL VS 4 Where: Vo = DC output voltage IDC = DC output load current f = Switching frequency Vs = Supply voltage In power MOSFET drive applications the PDC term is negligible. MOSFET power transistors are high impedance, capacitive input devices. In applications where resistive loads or relays are driven, the PDC component will normally dominate. The magnitude of PAC is readily estimated for several cases: A. 6 B. 1. f 2. CL 3. Vs 4. PAC = 20kHZ =1000pf = 18V = 65mW 1. f 2. CL 3. VS 4. PAC 5 = 200kHz =1000pf =15V = 45mW During output level state changes, a current surge will flow through the series connected N and P channel output MOSFETS as one device is turning "ON" while the other is turning "OFF". The current spike flows only during output transitions. The input levels should not be maintained between the logic "0" and logic "1" levels. Unused driver inputs must be tied to ground and not be allowed to float. Average power dissipation will be reduced by minimizing input rise times. As shown in the characteristic curves, average supply current is frequency dependent. 7 8 4-171 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC426 TC427 TC428 TYPICAL CHARACTERISTICS Rise and Fall Times vs Supply Voltage 90 C L = 1000pF TA = +25°C 60 80 DELAY TIME (nsec) 40 30 tR tF 20 t D2 70 50 t D1 5 0 10 15 SUPPLY VOLTAGE (V) 20 0 5 Rise and Fall Times vs Capacitive Load 1K 70 60 50 tD1 30 –25 60 40 200kHz 30 1 10 100 1000 CAPACITIVE LOAD (pF) 10 10K 100 1000 CAPACITIVE LOAD (pF) High Output vs Voltage 1.20 VDD = 18V TA= +25°C 5V VDD – VOUT (V) 10V VDD = 5V TA= +25°C 1.76 20 10K Low Output vs Voltage 2.20 10 10 20kHz 10 25 50 75 100 125 150 TEMPERATURE (°C) T = +25°C A CL = 1000pF tF 20 0 0 tR 100 50 Supply Current vs Frequency 30 TA = +25°C VDD = 18V TIME (nsec) 80 25 50 75 100 125 150 TEMPERATURE (°C) 0 400kHz TA = +25°C VDD = 18V 70 SUPPLY CURRENT (mA) DELAY TIME (nsec) 0 –25 20 80 tD2 40 SUPPLY CURRENT (mA) 10 15 SUPPLY VOLTAGE (V) Supply Current vs Capacitive Load 100 90 tF 20 10 Delay Times vs Temperature C L = 1000pF VDD = 18V 25 15 30 10 tR 30 60 40 C L= 1000 pF VDD = 18V 35 VDD = 8V 1.32 13V 0.88 18V 0.44 OUTPUT VOLTAGE (V) TIME (nsec) 50 40 C L = 1000pF TA = +25°C TIME (nsec) 70 Rise and Fall Times vs Temperature Delay Times vs Supply Voltage 0.96 0.72 10V 0.48 15V 0.24 0 10 100 FREQUENCY (kHz) 1000 10 20 30 40 50 60 70 80 90 100 CURRENT SOURCED (mA) 0 Supply Voltage vs Quiescent Supply Current Supply Voltage vs Quiescent Supply Current 20 NO LOAD BOTH INPUTS LOGIC "1" TA = +25°C SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V) 20 15 10 20 30 40 50 60 70 80 90 100 CURRENT SUNK (mA) 0 10 5 Thermal Derating Curves 1600 NO LOAD BOTH INPUTS LOGIC "0" TA = +25°C 1400 MAX. POWER (mW) 1 15 10 5 8 Pin DIP 1200 8 Pin CerDIP 1000 800 8 Pin SOIC 600 400 200 0 0 0 4-172 1 2 3 4 5 SUPPLY CURRENT (mA) 6 0 10 20 30 40 50 60 70 80 90 100 110 120 AMBIENT TEMPERATURE (°C) 0 50 100 150 200 250 SUPPLY CURRENT (µA) 300 TELCOM SEMICONDUCTOR, INC. 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC426 TC427 TC428 VDD = 18V 1µF INPUT VDD = 18V 0.1µF 1 1µF OUTPUT INPUT OUTPUT CL = 1000pF CL = 1000pF 2 INPUT: 100kHz, square wave, tRISE = tFALL ≤ 10nsec 2 0.1µF 1 1 2 INPUT: 100kHz, square wave, tRISE = tFALL ≤ 10nsec TC426 (1/2 TC428) +5V 90% 3 TC427 (1/2 TC428) +5V 90% INPUT INPUT 10% 0V tD1 18V tD2 tF 10% 0V tR 18V 90% 90% tD1 OUTPUT 90% tR OUTPUT 10% 10% 0V 10% 0V Test Figure 1. Inverting Driver Switching Time Test Circuit tD2 4 90% tF 10% Test Figure 2. Noninverting Driver Switching Time Test Circuit VOLTAGE DOUBLER 5 + 15V 30. 29. 28. 0.1µF 4.7µF 6 2 f IN = 10kHz 1/2 TC426 3 – 7 + 1N4001 VOUT (V) + – 1N4001 VOUT 27. 26. 25. 24. 6 23. 10µF + – 22. 47µF 0 10 20 30 40 50 60 70 80 90 100 IOUT (mA) VOLTAGE INVERTER + 15V -5 7 -6 + – -7 4.7µF VOUT (V) 0.1µF 6 2 f IN = 10kHz 1/2 TC426 3 + 7 – 1N4001 10µF TELCOM SEMICONDUCTOR, INC. 1N4001 VOUT – + -8 -9 -10 -11 -12 -13 47µF -14 0 8 10 20 30 40 50 60 70 80 90 100 IOUT (mA) 4-173