TELCOM TC1427CPA

TC1426
TC1427
TC1428
1.2A DUAL HIGH-SPEED MOSFET DRIVERS
2
FEATURES
GENERAL DESCRIPTION
■ Low Cost
■ Latch-Up Protected: Will Withstand 500 mA Reverse
Output Current
■ ESD Protected ................................................... ±2 kV
■ High Peak Output Current ........................ 1.2A Peak
■ High Capacitive Load Drive
Capability ...................................... 1000pF in 38nsec
■ Wide Operating Range ........................... 4.5V to 16V
■ Low Delay Time ...................................... 75nsec Max
■ Logic Input Threshold Independent of
Supply Voltage
■ Output Voltage Swing to Within 25mV of
Ground or VDD
■ Low Output Impedance ........................................ 8Ω
The TC1426/27/28 are a family of 1.2A dual high- speed
drivers. CMOS fabrication is used for low power consumption and high efficiency.
These devices are fabricated using an epitaxial layer to
effectively short out the intrinsic parasitic transistor responsible for CMOS latch-up. They incorporate a number of other
design and process refinements to increase their long-term
reliability.
The TC1426 is compatible with the bipolar DS0026, but
only draws 1/5 of the quiescent current. The TC1426/27/28
are also compatible with the TC426/27/28, but with 1.2A
peak output current rather than the 1.5A of the TC426/27/28
devices.
Other compatible drivers are the TC4426/27/28 and the
TC4426A/27A/28A. The TC4426/27/28 have the added
feature that the inputs can withstand negative voltage up to
5V with diode protection circuits. The TC4426A/27A/28A
have matched input to output leading edge and falling edge
delays, tD1 and tD2, for processing short duration pulses in
the 25 nanoseconds range. All of the above drivers are pin
compatible.
The high-input impedance TC1426/27/28 drivers are
CMOS/TTL input-compatible, do not require the speed-up
needed by the bipolar devices, and can be directly driven by
most PWM ICs.
This family of devices is available in inverting and noninverting versions. Specifications have been optimized to
achieve low-cost and high-performance devices, well-suited
for the high-volume manufacturer.
APPLICATIONS
■
■
■
■
■
Power MOSFET Drivers
Switched Mode Power Supplies
Pulse Transformer Drive
Small Motor Controls
Print Head Drive
PIN CONFIGURATIONS
NC 1
8 NC
IN A 2
GND 3
NC 1
8 NC
7 OUT A IN A 2
TC1426CPA
6 VDD
IN B 4
GND 3
TC1427CPA
5 OUT B IN B 4
2, 4
8 NC
6 VDD
GND 3
7 OUT A
TC1428CPA
5 OUT B IN B 4
2, 4
7, 5
NC 1
7 OUT A IN A 2
7, 5
NC = NO CONNECTION
NC 1
8 NC
TC1426COA
NC 1
8 NC
7 OUT A IN A 2
GND 3
6 VDD
IN B 4
5 OUT B IN B 4
2, 4
2
7
4
5
NON-INVERTING
INVERTING
IN A 2
6 VDD
5 OUT B
TC1427COA
6 VDD
GND 3
8 NC
TC1428COA
7, 5
5 OUT B
Part No.
Package
Temp. Range
2
7
TC1426COA
8-Pin SOIC
0°C to +70°C
4
5
TC1426CPA
8-Pin Plastic DIP
0°C to +70°C
TC1427COA
8-Pin SOIC
0°C to +70°C
TC1427CPA
8-Pin Plastic DIP
0°C to +70°C
TC1428COA
8-Pin SOIC
0°C to +70°C
TC1428CPA
8-Pin Plastic DIP
0°C to +70°C
NON-INVERTING
INVERTING
3
4
5
6
ORDERING INFORMATION
7 OUT A
6 VDD
GND 3
5 OUT B IN B 4
2, 4
7, 5
NC 1
7 OUT A IN A 2
1
NC = NO CONNECTION
FUNCTIONAL BLOCK DIAGRAM
V+
'500µA
' 2.5mA
TC1426 INVERTING
TC1427 NONINVERTING
TC1428 INVERTING/NONINVERTING
NONINVERTING
OUTPUT
INVERTING
OUTPUT
(TC1427)
(TC1426)
8
INPUT
GND
NOTE: TC1428 has one inverting and one noninverting driver.
Ground any unused driver input.
TC1426/7/8-8 10/11/96
TELCOM SEMICONDUCTOR, INC.
7
4-207
1.2A DUAL HIGH-SPEED MOSFET DRIVERS
TC1426
TC1427
TC1428
ABSOLUTE MAXIMUM RATINGS*
Power Dissipation (TA ≤ 70°C)
Plastic DIP ...........................................................730W
SOIC ................................................................ 470 mW
Derating Factor
Plastic DIP ..................................................... 8 mW/°C
SOIC .............................................................. 4 mW/°C
Supply Voltage ............................................................18V
Input Voltage, Any Terminal .. (VDD + 0.3V) to (GND – 0.3V)
Operating Temperature : C Version .............. 0°C to +70°C
E Version ......... – 40°C to +85°C
Maximum Chip Temperature ................................. +150°C
Storage Temperature ............................. +65°C to +150°C
Lead Temperature (Soldering ,10 sec) ................. +300°C
*Stresses above those listed under "Absolute Maximum Ratings" may
cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions above
those indicated in the operational sections of the specifications is not
implied. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
ELECTRICAL CHARACTERISTICS: TA = 25°C with 4.5V ≤ VDD+ ≤ 16V unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Input
VIH
Logic 1, Input Voltage
3
—
—
V
VIL
Logic 0, Input Voltage
—
—
0.8
V
–1
—
1
µA
IIN
Input Current
0V ≤ VIN ≤ VDD
Output
VOH
High Output Voltage
Test Figures 1 and 2
VDD – 0.025
—
—
V
VOL
Low Output Voltage
Test Figures 1 and 2
—
—
0.025
V
RO
Output Resistance
VIN = 0.8V,
IOUT = 10 mA, VDD = 16V
VIN = 3V,
IOUT = 10 mA, VDD = 16V
—
12
18
Ω
—
8
12
—
1.2
—
A
> 500
—
—
mA
IPK
Peak Output Current
I
Latch-Up Current
Withstand Reverse Current
Switching Time (Note 1)
tR
Rise Time
Test Figures 1 and 2
—
—
35
nsec
tF
Fall Time
Test Figures 1 and 2
—
—
25
nsec
tD1
Delay Time
Test Figures 1 and 2
—
—
75
nsec
tD2
Delay Time
Test Figures 1 and 2
—
—
75
nsec
VIN = 3V (Both Inputs)
VIN = 0V (Both Inputs)
—
—
—
—
9
0.5
mA
Power Supply
IS
Power Supply Current
Note: 1. Switching times guaranteed by design.
4-208
TELCOM SEMICONDUCTOR, INC.
1.2A DUAL HIGH-SPEED MOSFET DRIVERS
TC1426
TC1427
TC1428
1
ELECTRICAL CHARACTERISTICS: Over operating temperature range with 4.5V ≤ VDD + ≤ 16V unless
otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
2
Input
VIH
Logic 1, Input Voltage
3
—
—
V
VIL
Logic 0, Input Voltage
—
—
0.8
V
IIN
Input Current
0V ≤ VIN ≤ VDD
– 10
—
10
µA
VOH
High Output Voltage
Test Figures 1 and 2
VDD – 0.025
—
—
V
VOL
Low Output Voltage
Test Figures 1 and 2
—
—
0.025
V
RO
Output Resistance
VIN = 0.8V,
IOUT = 10mA, VDD = 16V
VIN = 3V,
IOUT = 10mA, VDD = 16V
—
15
23
Ω
—
10
18
> 500
—
—
mA
Output
I
Latch-Up Current
Withstand Reverse Current
3
4
Switching Time (Note 1)
tR
Rise Time
Test Figures 1 and 2
—
—
60
nsec
tF
Fall Time
Test Figures 1 and 2
—
—
40
nsec
tD1
Delay Time
Test Figures 1 and 2
—
—
125
nsec
tD2
Delay Time
Test Figures 1 and 2
—
—
125
nsec
VIN = 3V (Both Inputs)
—
—
13
mA
VIN = 0V (Both Inputs)
—
—
0.7
Power Supply
IS
Power Supply Current
5
Note: 1. Switching times guaranteed by design.
SUPPLY BYPASSING
INPUT STAGE
Large currents are required to charge and discharge
capacitive loads quickly. For example, charging a 1000-pF
load to 16V in 25nsec requires an 0.8A current from the
device power supply.
To guarantee low supply impedance over a wide frequency range, a parallel capacitor combination is recommended for supply bypassing. Low-inductance ceramic
MLC capacitors with short lead lengths (< 0.5-in.) should
be used. A 1.0-µF film capacitor in parallel with one or two
0.1-µF ceramic MLC capacitors normally provides adequate
bypassing.
The input voltage level changes the no-load or quiescent supply current. The N-channel MOSFET input stage
transistor drives a 2.5 mA current source load. With a logic
"1" input, the maximum quiescent supply current is 9mA.
Logic "0" input level signals reduce quiescent current to 500
µA maximum. Unused driver inputs must be connected
to VDD or GND. Minimum power dissipation occurs for logic
"0" inputs for the TC1426/27/28.
The drivers are designed with 100 mV of hysteresis.
This provides clean transitions and minimizes output stage
current spiking when changing states. Input voltage thresholds are approximately 1.5V, making logic "1" input any
voltage greater than 1.5V up to VDD. Input current is less
than 1µA over this range.
The TC1426/27/28 may be directly driven by the TL494,
SG1526/27, TC38C42, TC170 and similar switch-mode
power supply integrated circuits.
GROUNDING
The TC1426 and TC1428 contain inverting drivers.
Individual ground returns for the input and output circuits or
a ground plane should be used. This will reduce negative
feedback that causes degradation in switching speed characteristics.
TELCOM SEMICONDUCTOR, INC.
4-209
6
7
8
1.2A DUAL HIGH-SPEED MOSFET DRIVERS
TC1426
TC1427
TC1428
Test Circuit
Test Circuit
VDD = 16V
1µF
WIMA
MKS-2
INPUT
VDD = 16V
1 µF
WIMA
MKS-2
0.1µF MLC
1
OUTPUT
INPUT
1
OUTPUT
C L = 1000pF
CL = 1000pF
2
2
TC1426
(1/2 TC1428)
+5V
TC1427
(1/2 TC1428)
+5V
90%
INPUT
0V
VDD
10%
tD1
tF
tD2
0V
tR
10%
VDD
90%
90%
tD1
90%
tR
OUTPUT
10%
Figure 1. Inverting Driver Switching Time
4-210
90%
INPUT
OUTPUT
0V
0.1µF MLC
10%
0V
10%
90%
tD2
tF
10%
Figure 2. Non-Inverting Driver Switching Time
TELCOM SEMICONDUCTOR, INC.
1.2A DUAL HIGH-SPEED MOSFET DRIVERS
TC1426
TC1427
TC1428
1
TYPICAL CHARACTERISTICS
Rise Time vs. Supply Voltage
550
Fall Time vs. Supply Voltage
330
TA = +25°C
220
198
10,000pF
132
4700pF
110
CL = 1000pF
TA = +25°C
70
TIME (nsec)
10,000pF
330
60
50
66
3
t D1
4700pF
2200pF
2
80
TA = +25°C
264
TIME (ns)
TIME (nsec)
440
Delay Time vs. Supply Voltage
40
2200pF
t D2
0
9
11
VDD (V)
13
0
15
5
Rise and Fall Times vs. Temperature
24
13
tRISE
16
65
85
105
TEMPERATURE (°C)
t D2
t D1
42
0
45
65
85
105
TEMPERATURE (°C)
1000
10,000
CAPACITIVE LOAD (pF)
TELCOM SEMICONDUCTOR, INC.
TIME (nsec)
500kHz
5
20kHz
6
100
2200
6
Supply Current vs. Frequency
CL = 1000pF
5VDD
10VDD
15VDD
10
100
520
940 1360 1780
CAPACITIVE LOAD (pF)
100
100
15 VDD
10
100
4
12
TA = +25°C
10 VDD
15
200kHz
Fall Time vs. Capacitive Load
TA = +25°C
100
13
18
125
1000
5 VDD
11
VDD (V)
0
25
Rise Time vs. Capacitive Load
1000
9
CL = 1000pF
VDD = 15V
TA = +25°C
24
48
125
7
30
36
45
5
Supply Current vs. Capacitive Load
54
tFALL
0
25
30
15
CL = 1000pF
VDD = +15V
8
TIME (nsec)
11
VDD (V)
60
TIME (nsec)
TIME (nsec)
32
9
Delay Time vs. Temperature
40
CL = 1000pF
VDD = +15V
7
SUPPLY CURRENT (mA)
7
10,000
1000
CAPACITIVE LOAD (pF)
SUPPLY CURRENT (mA)
5
80
VDD = 15V
TA = +25°C
VDD = 10V
7
60
40
20
VDD = 5V
0
10
100
1000
FREQUENCY (kHz)
10,000
4-211
8
1.2A DUAL HIGH-SPEED MOSFET DRIVERS
TC1426
TC1427
TC1428
TYPICAL CHARACTERISTIC (Cont.)
Low-State Output Resistance
50
TA = +25°C
100mA
R OUT (Ω)
ROUT (Ω )
50mA
9
10 -8
TA = +25°C
TA = +25°C
42
13
11
Crossover Energy Loss
High-State Output Resistance
100mA
34
26
A (sec)
15
50mA
10 -9
10mA
18
7
10mA
5
10
5
7
9
11
VDD (V)
13
Quiescent Power Supply
Current vs. Supply Voltage
9
11
VDD (V)
13
10 -10
15
4
6
8
10
12
VDD (V)
14
16
18
Quiescent Power Supply
Current vs. Supply Voltage
20
20
SUPPLY VOLTAGE (V)
BOTH INPUTS LOGIC “0”
SUPPLY VOLTAGE (V)
7
5
15
15
10
5
BOTH INPUTS LOGIC “1”
15
10
5
0
0
0
50
100 150 200 300
SUPPLY CURRENT (µA)
400
1
2
3
4
5
SUPPLY CURRENT (mA)
6
Thermal Derating Curves
1600
MAX. POWER (mV)
1400
8 Pin DIP
1200
8 Pin CerDIP
1000
800
8 Pin SOIC
600
400
200
0
0
10
20
30
40
50
60
70
80
90
100
110
120
AMBIENT TEMPERATURE (°C)
4-212
TELCOM SEMICONDUCTOR, INC.