VN2010L/BS107 Vishay Siliconix N-Channel 200-V (D-S) MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 VN2010L 200 BS107 D D D D D Low On-Resistance: 6 W Secondary Breakdown Free: 220 V Low Power/Voltage Driven Low Input and Output Leakage Excellent Thermal Stability D D D D D TO-226AA (TO-92) S 1 G 2 D D High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc. D Telephone Mute Switches, Ringer Circuits D Power Supply, Converters D Motor Control Low Offset Voltage Full-Voltage Operation Easily Driven Without Buffer Low Error Voltage No High-Temperature “Run-Away” TO-92-18RM (TO-18 Lead Form) Device Marking Front View “S” VN 2010L xxyy “S” = Siliconix Logo xxyy = Date Code 3 D 1 G 2 “S” BS 107 xxyy 3 “S” = Siliconix Logo xxyy = Date Code S Top View Top View VN2010L BS107 Device Marking Front View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol VN2010L BS107 Drain-Source Voltage VDS 200 200 Gate-Source Voltage VGS "30 "25 0.19 0.12 Continuous Drain Current (TJ = 150_C) _ TA= 25_C TA= 100_C Pulsed Drain Currenta Power Dissipation Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range ID IDM TA= 25_C TA= 100_C 0.12 RthJA TJ, Tstg V A 0.8 0.8 PD Unit 0.5 W 0.32 156 250 –55 to 150 _C/W _C Notes a. Pulse width limited by maximum junction temperature. Document Number: 70215 S-04279—Rev. C, 16-Jul-01 www.vishay.com 11-1 VN2010L/BS107 Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits VN2010L Parameter Symbol Test Conditions Typa Min V(BR)DSS VGS = 0 V, ID = 100 mA 220 200 VGS(th) VDS = VGS, ID = 1 mA 1.2 0.8 Max BS107 Min Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage VDS = 0 V, VGS = "20 V Gate-Body Leakage IGSS Drain Leakage Current IDSV Zero Gate Voltage Drain Current IDSS On-State Drain VDS = 0 V, VGS = "15 V 0.8 3 "10 VDS = 70 V, VGS = 0.2 V 1 VDS = 130 V, VGS = 0 V 0.03 VDS = 160 V, VGS = 0 V nA 100 0.7 VGS = 2.8 V, ID = 0.02 A 6 rDS(on) VGS = 4.5 V, ID = 0.05 A 6 Forward Transconductanceb gfs VDS = 15 V, ID = 0.1 A 180 Common Source Output Conductanceb gos VDS = 15 V, ID = 0.05 A 0.15 TJ = 125_C V m mA 1 VDS = 10 V, VGS = 10 V Drain-Source On-Resistanceb ID(on) 1.8 "10 TJ = 125_C Currentb 200 0.1 A 28 10 11 W 20 125 mS Dynamic Input Capacitance Ciss 35 60 Output Capacitance Coss 9 30 Reverse Transfer Capacitance Crss 1 15 5 20 21 30 VDS =25 V, VGS = 0 V, f = 1 MHz pF Switchingc Turn-On Time tON Turn-Off Time tOFF VDD = 25 V, RL = 250 W ID ^ 0.1 A, VGEN = 10 V RG = 25 W Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v300 ms duty cycle v2%. c. Switching time is essentially independent of operating temperature. www.vishay.com 11-2 ns VNDQ20 Document Number: 70215 S-04279—Rev. C, 16-Jul-01 VN2010L/BS107 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Ohmic Region Characteristics 0.5 Output Characteristics for Low Gate Drive 50 VGS = 10 V 5V ID – Drain Current (mA) 4V 0.4 ID – Drain Current (A) VGS = 2.2 V 6V 0.3 3V 0.2 0.1 40 2.0 V 30 1.8 V 1.6 V 20 1.4 V 1.2 V 10 2V 0.6 V 1.0 V 0 0 0 1 2 3 4 0 5 0.4 VDS – Drain-to-Source Voltage (V) 0.8 1.2 1.6 2.0 VDS – Drain-to-Source Voltage (V) Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage 500 28 VDS = 15 V 25_C TJ = –55_C 24 rDS(on) – On-Resistance ( Ω ) ID – Drain Current (mA) 400 125_C 300 200 100 20 I D = 500 mA 16 12 250 mA 8 50 mA 4 0 0 0 1 2 3 4 0 5 8 12 16 VGS – Gate-Source Voltage (V) On-Resistance vs. Drain Current Normalized On-Resistance vs. Junction Temperature 12.5 20 2.25 rDS(on) – Drain-Source On-Resistance ( Ω ) (Normalized) rDS(on) – Drain-Source On-Resistance ( Ω ) 4 VGS – Gate-Source Voltage (V) 10.0 VGS = 10 V 7.5 5.0 2.5 0 2.00 VGS = 4.5 V ID = 50 mA 1.75 10 mA 1.50 1.25 1.00 0.75 0.50 0 0.2 0.4 0.6 ID – Drain Current (A) Document Number: 70215 S-04279—Rev. C, 16-Jul-01 0.8 1.0 –50 –10 30 70 110 150 TJ – Junction Temperature (_C) www.vishay.com 11-3 VN2010L/BS107 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Threshold Region Capacitance 10 60 VGS = 0 V VDS = 5 V f = 1 MHz 50 C – Capacitance (pF) ID – Drain Current (mA) TJ = 150_C 1 25_C 0.1 C iss 40 30 C oss 20 10 C rss –55_C 0.01 0 0 0.4 0.8 1.2 1.6 0 2.0 VGS – Gate-to-Source Voltage (V) 20 30 50 40 VDS – Drain-to-Source Voltage (V) Gate Charge Load Condition Effects on Switching 15.0 VGS – Gate-to-Source Voltage (V) 10 100 50 I D = 0.1 A 12.5 VDD = 25 V RG = 25 W VGS = 0 to 10 V VDS = 100 V 10.0 7.5 20 10 160 V td(off) 5 5.0 tr 2.5 2 0 1 td(on) tf 0 250 500 750 1000 1250 0.01 Qg – Total Gate Charge (pC) 0.1 1.0 ID – Drain Current (A) Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 156_C/W 0.01 3. TJM – TA = PDMZthJA(t) Single Pulse 0.01 0.1 1 10 100 1K 10 K t1 – Square Wave Pulse Duration (sec) www.vishay.com 11-4 Document Number: 70215 S-04279—Rev. C, 16-Jul-01