VISHAY BS107

VN2010L/BS107
Vishay Siliconix
N-Channel 200-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number
V(BR)DSS Min (V)
rDS(on) Max (W)
VGS(th) (V)
ID (A)
10 @ VGS = 4.5 V
0.8 to 1.8
0.19
28 @ VGS = 2.8 V
0.8 to 3
0.12
VN2010L
200
BS107
D
D
D
D
D
Low On-Resistance: 6 W
Secondary Breakdown Free: 220 V
Low Power/Voltage Driven
Low Input and Output Leakage
Excellent Thermal Stability
D
D
D
D
D
TO-226AA
(TO-92)
S
1
G
2
D
D High-Voltage Drivers: Relays, Solenoids,
Lamps, Hammers, Displays, Transistors, etc.
D Telephone Mute Switches, Ringer Circuits
D Power Supply, Converters
D Motor Control
Low Offset Voltage
Full-Voltage Operation
Easily Driven Without Buffer
Low Error Voltage
No High-Temperature
“Run-Away”
TO-92-18RM
(TO-18 Lead Form)
Device Marking
Front View
“S” VN
2010L
xxyy
“S” = Siliconix Logo
xxyy = Date Code
3
D
1
G
2
“S” BS
107
xxyy
3
“S” = Siliconix Logo
xxyy = Date Code
S
Top View
Top View
VN2010L
BS107
Device Marking
Front View
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
VN2010L
BS107
Drain-Source Voltage
VDS
200
200
Gate-Source Voltage
VGS
"30
"25
0.19
0.12
Continuous Drain Current (TJ = 150_C)
_
TA= 25_C
TA= 100_C
Pulsed Drain Currenta
Power Dissipation
Thermal Resistance, Junction-to-Ambient
Operating Junction and Storage Temperature Range
ID
IDM
TA= 25_C
TA= 100_C
0.12
RthJA
TJ, Tstg
V
A
0.8
0.8
PD
Unit
0.5
W
0.32
156
250
–55 to 150
_C/W
_C
Notes
a. Pulse width limited by maximum junction temperature.
Document Number: 70215
S-04279—Rev. C, 16-Jul-01
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11-1
VN2010L/BS107
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
VN2010L
Parameter
Symbol
Test Conditions
Typa
Min
V(BR)DSS
VGS = 0 V, ID = 100 mA
220
200
VGS(th)
VDS = VGS, ID = 1 mA
1.2
0.8
Max
BS107
Min
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
VDS = 0 V, VGS = "20 V
Gate-Body Leakage
IGSS
Drain Leakage Current
IDSV
Zero Gate Voltage Drain Current
IDSS
On-State Drain
VDS = 0 V, VGS = "15 V
0.8
3
"10
VDS = 70 V, VGS = 0.2 V
1
VDS = 130 V, VGS = 0 V
0.03
VDS = 160 V, VGS = 0 V
nA
100
0.7
VGS = 2.8 V, ID = 0.02 A
6
rDS(on)
VGS = 4.5 V, ID = 0.05 A
6
Forward Transconductanceb
gfs
VDS = 15 V, ID = 0.1 A
180
Common Source
Output Conductanceb
gos
VDS = 15 V, ID = 0.05 A
0.15
TJ = 125_C
V
m
mA
1
VDS = 10 V, VGS = 10 V
Drain-Source On-Resistanceb
ID(on)
1.8
"10
TJ = 125_C
Currentb
200
0.1
A
28
10
11
W
20
125
mS
Dynamic
Input Capacitance
Ciss
35
60
Output Capacitance
Coss
9
30
Reverse Transfer Capacitance
Crss
1
15
5
20
21
30
VDS =25 V, VGS = 0 V, f = 1 MHz
pF
Switchingc
Turn-On Time
tON
Turn-Off Time
tOFF
VDD = 25 V, RL = 250 W
ID ^ 0.1 A, VGEN = 10 V
RG = 25 W
Notes
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW v300 ms duty cycle v2%.
c. Switching time is essentially independent of operating temperature.
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11-2
ns
VNDQ20
Document Number: 70215
S-04279—Rev. C, 16-Jul-01
VN2010L/BS107
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Ohmic Region Characteristics
0.5
Output Characteristics for Low Gate Drive
50
VGS = 10 V
5V
ID – Drain Current (mA)
4V
0.4
ID – Drain Current (A)
VGS = 2.2 V
6V
0.3
3V
0.2
0.1
40
2.0 V
30
1.8 V
1.6 V
20
1.4 V
1.2 V
10
2V
0.6 V
1.0 V
0
0
0
1
2
3
4
0
5
0.4
VDS – Drain-to-Source Voltage (V)
0.8
1.2
1.6
2.0
VDS – Drain-to-Source Voltage (V)
Transfer Characteristics
On-Resistance vs. Gate-to-Source Voltage
500
28
VDS = 15 V
25_C
TJ = –55_C
24
rDS(on) – On-Resistance ( Ω )
ID – Drain Current (mA)
400
125_C
300
200
100
20
I D = 500 mA
16
12
250 mA
8
50 mA
4
0
0
0
1
2
3
4
0
5
8
12
16
VGS – Gate-Source Voltage (V)
On-Resistance vs. Drain Current
Normalized On-Resistance
vs. Junction Temperature
12.5
20
2.25
rDS(on) – Drain-Source On-Resistance ( Ω )
(Normalized)
rDS(on) – Drain-Source On-Resistance ( Ω )
4
VGS – Gate-Source Voltage (V)
10.0
VGS = 10 V
7.5
5.0
2.5
0
2.00
VGS = 4.5 V
ID = 50 mA
1.75
10 mA
1.50
1.25
1.00
0.75
0.50
0
0.2
0.4
0.6
ID – Drain Current (A)
Document Number: 70215
S-04279—Rev. C, 16-Jul-01
0.8
1.0
–50
–10
30
70
110
150
TJ – Junction Temperature (_C)
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11-3
VN2010L/BS107
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Threshold Region
Capacitance
10
60
VGS = 0 V
VDS = 5 V
f = 1 MHz
50
C – Capacitance (pF)
ID – Drain Current (mA)
TJ = 150_C
1
25_C
0.1
C iss
40
30
C oss
20
10
C rss
–55_C
0.01
0
0
0.4
0.8
1.2
1.6
0
2.0
VGS – Gate-to-Source Voltage (V)
20
30
50
40
VDS – Drain-to-Source Voltage (V)
Gate Charge
Load Condition Effects on Switching
15.0
VGS – Gate-to-Source Voltage (V)
10
100
50
I D = 0.1 A
12.5
VDD = 25 V
RG = 25 W
VGS = 0 to 10 V
VDS = 100 V
10.0
7.5
20
10
160 V
td(off)
5
5.0
tr
2.5
2
0
1
td(on)
tf
0
250
500
750
1000
1250
0.01
Qg – Total Gate Charge (pC)
0.1
1.0
ID – Drain Current (A)
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
0.05
PDM
0.02
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 156_C/W
0.01
3. TJM – TA = PDMZthJA(t)
Single Pulse
0.01
0.1
1
10
100
1K
10 K
t1 – Square Wave Pulse Duration (sec)
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11-4
Document Number: 70215
S-04279—Rev. C, 16-Jul-01