TN2410L, VN2406D/L, VN2410L/LS Vishay Siliconix N-Channel 240-V (D-S) MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max () VGS(th) (V) ID (A) TN2410L 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 VN2406D 6 @ VGS = 10 V 0.8 to 2 1.12 6 @ VGS = 10 V 0.8 to 2 0.18 VN2410L 10 @ VGS = 10 V 0.8 to 2 0.18 VN2410LS 10 @ VGS = 10 V 0.8 to 2 0.19 VN2406L 240 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc. D Telephone Mute Switches, Ringer Circuits D Power Supply, Converters D Motor Control Low On-Resistance: 3.5 Secondary Breakdown Free: 260 V Low Power/Voltage Driven Low Input and Output Leakage Excellent Thermal Stability Low Offset Voltage Full-Voltage Operation Easily Driven Without Buffer Low Error Voltage No High-Temperature “Run-Away” ’Device Marking Front View TO-226AA TN2410L (TO-92) S G D 1 VN2406L 2 “S” VN 2406L xxyy 3 VN2410L Top View (Copper Lead Frame) (Tab Drain) G ’Device Marking Front View 1 S 1 G 2 D 3 ’Device Marking Front View VN2410LS VN2406D D 2 S 3 VN2406D “S” xxyy “S” VN 2410L xxyy TN2410L VN2406L VN2410L TO-92S TO-220AB “S” TN 2410L xxyy “S” VN 2410LS xxyy “S” = Siliconix Logo xxyy = Date Code “S” = Siliconix Logo xxyy = Date Code Top View Top View VN2406D VN2410LS “S” = Siliconix Logo xxyy = Date Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol TN2410L VN2406Db VN2406L VN2410L VN2410LS Drain-Source Voltage VDS 240 240 240 240 240 Gate-Source Voltage VGS "20 "20 "20 "20 "20 0.18 1.12 0.18 0.18 0.19 0.11 0.7 0.11 0.11 0.12 1 3 1.7 1.7 2 Continuous Drain Current (TJ = 150_C) TA= 25_C TA= 100_C Pulsed Drain Currenta Power Dissipation IDM TA= 25_C TA= 100_C Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range ID PD RthJA TJ, Tstg 0.8 20 0.8 0.8 0.9 0.32 8 0.32 0.32 0.4 156 6.25c 156 156 139 –55 to 150 Unit V A W _C/W _C Notes a. Pulse width limited by maximum junction temperature. b. Reference case for all temperature testing. c. Maximum junction-to-case Document Number: 70204 S-04279—Rev. F, 16-Jul-01 www.vishay.com 11-1 TN2410L, VN2406D/L, VN2410L/LS Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits TN2410L Parameter Symbol Test Conditions Typa Min V(BR)DSS VGS = 0 V, ID = 100 A 260 240 VGS(th) VDS = VGS, ID = 1 mA 1.4 0.5 Max VN2406D/L Min Max VN2410L/LS Min Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage 240 1.8 0.8 VDS = 0 V, VGS = "15 V Gate-Body Leakage TJ = 125_C IGSS VDS = 0 V, VGS = "20 V VDS = 192 V, VGS = 0 V TJ = 125_C Zero Gate Voltage Drain Current IDSS Drain-Source On-Resistanceb ID(on) 0.01 1 1 100 VDS = 120 V, VGS = 0 V VDS = 10 V, VGS = 4.5 V 0.8 VDS = 15 V, VGS = 10 V 1.5 VGS = 2.5 V, ID = 0.1 A 7.5 VGS = 3.5 V, ID = 0.05 A 4.5 15 4 10 7.5 20 VGS = 4.5 V, ID = 0.2 A rDS(on) TJ = 125_C VGS = 10 V, ID = 0.5 A TJ = 125_C Forward Transconductanceb gfs Input Capacitance Ciss 2 "100 "100 "500 "500 10 10 500 500 V nA 1 A 1 10 10 6 10 6.5 14.8 24.7 500 VDS = 10 V, ID = 0.5 A 530 A 0.25 3.5 VDS = 10 V, ID = 0.2 A VDS = 25 V, VGS = 0 V f = 1 MHz 0.8 "10 TJ = 125_C On-State Drain Currentb 240 2 100 300 mS 300 115 135 135 135 Output Capacitance Coss 30 50 50 50 Reverse Transfer Capacitance Crss 5 20 20 20 tON 5 35 8 8 8 8 pF Switchingc Turn-On Time td(on) tr tOFF Turn-Off Time 3 VDD = 60 V, RL = 150 ID ^ 0.4 A, VGEN = 10 V RG = 25 11-2 ns 60 td(off) 20 23 23 tf 6 34 34 Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v300 s duty cycle v 2%. c. Switching time is essentially independent of operating temperature. www.vishay.com 2 26 VNDB24 Document Number: 70204 S-04279—Rev. F, 16-Jul-01 TN2410L, VN2406D/L, VN2410L/LS Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Ohmic Region Characteristics 1.0 4.0 V 0.6 3.5 V 0.4 3.0 V VGS = 3 V 2.6 V 160 ID – Drain Current (mA) 0.8 ID – Drain Current (A) Output Characteristics for Low Gate Drive 200 VGS = 10 V 2.5 V 0.2 2.4 V 120 2.2 V 80 2.0 V 40 1.8 V 2.0 V 0 0 0 1 2 3 4 5 0 0.4 VDS – Drain-to-Source Voltage (V) Transfer Characteristics 1.6 2.0 12 125_C VDS = 15 V 10 TJ = –55_C rDS(on) – On-Resistance ( Ω ) 0.4 ID – Drain Current (A) 1.2 On-Resistance vs. Gate-to-Source Voltage 0.5 25_C 0.3 0.2 0.1 8 6 1.0 A 0.5 A 4 I D = 0.1 A 2 0 0 0 1 2 3 4 0 5 4 8 12 16 VGS – Gate-Source Voltage (V) VGS – Gate-Source Voltage (V) On-Resistance vs. Drain Current Normalized On-Resistance vs. Junction Temperature 6 20 rDS(on) – Drain-Source On-Resistance ( Ω ) (Normalized) 2.25 VGS = 10 V rDS(on) – Drain-Source On-Resistance ( Ω ) 0.8 VDS – Drain-to-Source Voltage (V) 5 4 3 2 1 0 VGS = 10 V ID = 0.5 A 2.00 1.75 0.1 A 1.50 1.25 1.00 0.75 0.50 0 0.1 0.2 0.3 0.4 ID – Drain Current (A) Document Number: 70204 S-04279—Rev. F, 16-Jul-01 0.5 0.6 –50 –10 30 70 110 150 TJ – Junction Temperature (_C) www.vishay.com 11-3 TN2410L, VN2406D/L, VN2410L/LS Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Threshold Region Capacitance 10 400 VGS = 0 V f = 1 MHz VDS = 5 V 300 C – Capacitance (pF) ID – Drain Current (mA) TJ = 150_C 1 25_C 0.1 200 Ciss 100 Coss –55_C Crss 0.01 0 0.3 0.7 1.1 1.5 0 VGS – Gate-to-Source Voltage (V) 20 30 40 50 VDS – Drain-to-Source Voltage (V) Gate Charge Load Condition Effects on Switching 100 15.0 VDS = 60 V RG = 25 ID = 0.5 A 12.5 td(off) t – Switching Time (ns) VGS – Gate-to-Source Voltage (V) 10 10.0 VDS = 120 V 7.5 192 V 5.0 tf 10 td(on) 2.5 tr 1 0 0 400 800 1200 1600 0.01 2000 0.1 Qg – Total Gate Charge (pC) 1 ID – Drain Current (A) Drive Resistance Effects on Switching Source-Drain Diode Forward Voltage 100 1 VDD = 60 V RL = 150 ID = 0.4 A IS – Source Current (A) t – Switching Time (ns) td(off) tf 10 td(on) TJ = 150_C 0.1 TJ = 25_C tr 1 0.01 1 2 5 10 20 RG – Gate Resistance () www.vishay.com 11-4 50 100 0 0.5 1.0 1.5 2.0 2.5 VSD – Source-Drain Voltage (V) Document Number: 70204 S-04279—Rev. F, 16-Jul-01 TN2410L, VN2406D/L, VN2410L/LS Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = 0.01 t1 t2 2. Per Unit Base = RthJA = 156_C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 0.01 0.1 1 10 100 1K 10 K t1 – Square Wave Pulse Duration (sec) Document Number: 70204 S-04279—Rev. F, 16-Jul-01 www.vishay.com 11-5