SavantIC Semiconductor Product Specification BUV23 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High DC current gain ·Very fast switching times ·Low collector saturation voltage APPLICATIONS ·Designed for high current,high speed and high power application. PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings (Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 400 V VCEO Collector-emitter voltage Open base 325 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 30 A ICM Collector current-peak 40 A IB Base current 6 A PT Total power dissipation 250 W Tj Junction temperature -65~200 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 0.7 UNIT /W SavantIC Semiconductor Product Specification BUV23 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; IB=0;L=25mH 325 V V(BR)EBO Emitter-base breakdown voltage IE=50mA; IC=0 7 V VCEsat-1 Collector-emitter saturation voltage IC=8 A;IB=1.6A 0.8 V VCEsat-2 Collector-emitter saturation voltage IC=16 A;IB=3.2 A 1.0 V Base-emitter saturation voltage IC=16 A;IB=3.2 A 1.5 V ICEX Collector cut-off current VCE=400V;VBE=-1.5V TC=125 3.0 12 mA ICEO Collector cut-off current VCE=260V;IB=0 3 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA hFE-1 DC current gain IC=8A ; VCE=4V 15 hFE-2 DC current gain IC=16A ; VCE=4V 8 Transition frequency IC=2A ; VCE=15V; f=4MHz VBEsat fT TYP. MAX UNIT 60 8.0 MHz Switching times ton Turn-on time ts Storage time tf Fall time IC=16A ;IB1=-IB2=3.2A VCC=100V ;RC=6.25D 2 0.8 µs 2.5 µs 0.4 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BUV23