SAVANTIC BUV23

SavantIC Semiconductor
Product Specification
BUV23
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High DC current gain
·Very fast switching times
·Low collector saturation voltage
APPLICATIONS
·Designed for high current,high speed
and high power application.
PINNING(see fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings (Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
400
V
VCEO
Collector-emitter voltage
Open base
325
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
30
A
ICM
Collector current-peak
40
A
IB
Base current
6
A
PT
Total power dissipation
250
W
Tj
Junction temperature
-65~200
Tstg
Storage temperature
-65~200
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance junction to case
MAX
0.7
UNIT
/W
SavantIC Semiconductor
Product Specification
BUV23
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2A; IB=0;L=25mH
325
V
V(BR)EBO
Emitter-base breakdown voltage
IE=50mA; IC=0
7
V
VCEsat-1
Collector-emitter saturation voltage
IC=8 A;IB=1.6A
0.8
V
VCEsat-2
Collector-emitter saturation voltage
IC=16 A;IB=3.2 A
1.0
V
Base-emitter saturation voltage
IC=16 A;IB=3.2 A
1.5
V
ICEX
Collector cut-off current
VCE=400V;VBE=-1.5V
TC=125
3.0
12
mA
ICEO
Collector cut-off current
VCE=260V;IB=0
3
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1.0
mA
hFE-1
DC current gain
IC=8A ; VCE=4V
15
hFE-2
DC current gain
IC=16A ; VCE=4V
8
Transition frequency
IC=2A ; VCE=15V; f=4MHz
VBEsat
fT
TYP.
MAX
UNIT
60
8.0
MHz
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=16A ;IB1=-IB2=3.2A
VCC=100V ;RC=6.25D
2
0.8
µs
2.5
µs
0.4
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
BUV23