Inchange Semiconductor Product Specification BUV23 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3 package ・High DC current gain ・Very fast switching times ・Low collector saturation voltage APPLICATIONS ・Designed for high current,high speed and high power application. PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol 导体 半 电 固 Absolute maximum ratings (Tc=25℃) SYMBOL PARAMETER OND R O T UC VALUE UNIT 400 V 325 V 7 V Collector current 30 A ICM Collector current-peak 40 A IB Base current 6 A PT Total power dissipation 250 W Tj Junction temperature -65~200 ℃ Tstg Storage temperature -65~200 ℃ MAX UNIT 0.7 ℃/W VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO IC CONDITIONS IC M E ES Open emitter ANG INCH Emitter-base voltage Open base Open collector TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification BUV23 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; IB=0;L=25mH 325 V V(BR)EBO Emitter-base breakdown voltage IE=50mA; IC=0 7 V VCEsat-1 Collector-emitter saturation voltage IC=8 A;IB=1.6A 0.8 V VCEsat-2 Collector-emitter saturation voltage IC=16 A;IB=3.2 A 1.0 V Base-emitter saturation voltage IC=16 A;IB=3.2 A 1.5 V ICEX Collector cut-off current VCE=400V;VBE=-1.5V TC=125℃ 3.0 12 mA ICEO Collector cut-off current VCE=260V;IB=0 3 mA IEBO Emitter cut-off current VEB=5V; IC=0 DC current gain IC=8A ; VCE=4V VBEsat hFE-1 hFE-2 fT 体 半导 固电 DC current gain G N A CH Transition frequency IN Switching times ton Turn-on time ts Storage time tf Fall time R O T UC OND IC=2A ; VCE=15V; f=4MHz IC=16A ;IB1=-IB2=3.2A VCC=100V ;RC=6.25Ω 2 MAX 1.0 IC M E ES IC=16A ; VCE=4V TYP. 15 UNIT mA 60 8 8.0 MHz 0.8 μs 2.5 μs 0.4 μs Inchange Semiconductor Product Specification BUV23 Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions 3