ZETEX BCX41

SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 –OCTOBER 1995
BCX41
✪
PARTMARKING DETAIL – EK
2
1
3
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
V
Collector-Emitter Voltage
VCES
125
Collector-Emitter Voltage
VCEO
125
V
Emitter-Base Voltage
VEBO
5
V
Peak Pulse Current
ICM
1
A
Continuous Collector Current
IC
800
mA
Base Current
IB
100
mA
Power Dissipation at Tamb=25°C
PTOT
330
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Cut-Off ICES
Current
100
10
µA
nA
VCE =100V
VCE =100V, Tamb =150°C
Collector Cut-Off
Current
ICEX
10
75
µA
µA
VCE =100V,VBE=0.2V,Tamb =85°C
VCE=100V,VBE=0.2V,
Tamb=125°C
Emitter Cut-Off
Current
IEBO
100
nA
VEB =4V
Collector-Emitter
Saturation Voltage
VCE(sat)
0.9
V
IC =300mA, IB =30mA *
Base-Emitter
Saturation Voltage
VBE(sat)
1.4
V
IC =300mA, IB =30mA *
Static Forward
hFE
Current Transfer Ratio
25
63
40
IC =100µ A, VCE =1V
IC =100mA, VCE =1V *
IC =200mA, VCE =1V *
Transition Frequency
fT
100
MHz IC =10mA, VCE =5V
f =20MHz
Output Capacitance
Cobo
12
pF
VCB =10V, IE=Ie=0, f =1MHz
* Measured under pulsed conditions. Pulse width = 300µs. Duty cycle 2%
3 - 33