SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 OCTOBER 1995 BCX41 ✪ PARTMARKING DETAIL EK 2 1 3 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V Collector-Emitter Voltage VCES 125 Collector-Emitter Voltage VCEO 125 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 1 A Continuous Collector Current IC 800 mA Base Current IB 100 mA Power Dissipation at Tamb=25°C PTOT 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Cut-Off ICES Current 100 10 µA nA VCE =100V VCE =100V, Tamb =150°C Collector Cut-Off Current ICEX 10 75 µA µA VCE =100V,VBE=0.2V,Tamb =85°C VCE=100V,VBE=0.2V, Tamb=125°C Emitter Cut-Off Current IEBO 100 nA VEB =4V Collector-Emitter Saturation Voltage VCE(sat) 0.9 V IC =300mA, IB =30mA * Base-Emitter Saturation Voltage VBE(sat) 1.4 V IC =300mA, IB =30mA * Static Forward hFE Current Transfer Ratio 25 63 40 IC =100µ A, VCE =1V IC =100mA, VCE =1V * IC =200mA, VCE =1V * Transition Frequency fT 100 MHz IC =10mA, VCE =5V f =20MHz Output Capacitance Cobo 12 pF VCB =10V, IE=Ie=0, f =1MHz * Measured under pulsed conditions. Pulse width = 300µs. Duty cycle 2% 3 - 33