ZETEX FMMTA55-2H

SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 – JANUARY 1996
FEATURES
*
FMMTA55
FMMTA56
✪
Gain of 50 at IC=100mA
PARTMARKING DETAIL -
E
C
FMMTA55 - 2H
FMMTA56 - 2G
FMMTA55R - NB
FMMTA56R - MB
B
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector-Base Voltage
VCBO
FMMTA55 FMMTA56
-60
-80
UNIT
V
Collector-Emitter Voltage
VCEO
-60
-80
V
Emitter-Base Voltage
VEBO
-4
V
Continuous Collector Current
IC
-500
mA
Power Dissipation at Tamb=25°C
Ptot
330
mW
Operating and Storage Temperature
Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
FMMTA55
FMMTA56
PARAMETER
SYMBOL
MIN.
Collector-Emitter
Breakdown Voltage
V(BR)CEO
-60
-80
V
IC=-1mA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO
-4
-4
V
IE=-100µ A, IC=0
Collector-Emitter
Cut-Off Current
ICES
-0.1
µA
VCE=-60V
Collector-Base
Cut-Off Current
ICBO
-0.1
µA
VCB=-80V, IE=0
VCB=-60V, IE=0
Static Forward
hFE
Current Transfer Ratio
MAX. MIN.
-0.1
-0.1
50
50
MAX. UNIT
50
50
CONDITIONS.
IC=-10mA, VCE=1V*
IC=-100mA, VCE=1V*
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.25
-0.25
V
IC=-100mA,
IB=-10mA*
Base-Emitter
Turn-On Voltage
VBE(on)
-1.2
-1.2
V
IC=-100mA, VCE=-1V*
Transition
Frequency
fT
MHz
IC=-10mA, VCE=-2V
f=100MHz
100
100
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
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