SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 JANUARY 1996 FEATURES * FMMTA55 FMMTA56 ✪ Gain of 50 at IC=100mA PARTMARKING DETAIL - E C FMMTA55 - 2H FMMTA56 - 2G FMMTA55R - NB FMMTA56R - MB B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO FMMTA55 FMMTA56 -60 -80 UNIT V Collector-Emitter Voltage VCEO -60 -80 V Emitter-Base Voltage VEBO -4 V Continuous Collector Current IC -500 mA Power Dissipation at Tamb=25°C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). FMMTA55 FMMTA56 PARAMETER SYMBOL MIN. Collector-Emitter Breakdown Voltage V(BR)CEO -60 -80 V IC=-1mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO -4 -4 V IE=-100µ A, IC=0 Collector-Emitter Cut-Off Current ICES -0.1 µA VCE=-60V Collector-Base Cut-Off Current ICBO -0.1 µA VCB=-80V, IE=0 VCB=-60V, IE=0 Static Forward hFE Current Transfer Ratio MAX. MIN. -0.1 -0.1 50 50 MAX. UNIT 50 50 CONDITIONS. IC=-10mA, VCE=1V* IC=-100mA, VCE=1V* Collector-Emitter Saturation Voltage VCE(sat) -0.25 -0.25 V IC=-100mA, IB=-10mA* Base-Emitter Turn-On Voltage VBE(on) -1.2 -1.2 V IC=-100mA, VCE=-1V* Transition Frequency fT MHz IC=-10mA, VCE=-2V f=100MHz 100 100 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% 3 - 177