HITACHI K1773

2SK1773
Silicon N-Channel MOS FET
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switchingregulator, DC-DC converter
Outline
TO-3P
D
1
G
2
S
3
1. Gate
2. Drain
(Flange)
3. Source
2SK1773
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
1000
V
Gate to source voltage
VGSS
±30
V
Drain current
ID
5
A
15
A
5
A
100
W
Drain peak current
I D(pulse)*
Body to drain diode reverse drain current
I DR
2
1
Channel dissipation
Pch*
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25 °C
2
2SK1773
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
1000
—
—
V
I D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±30
—
—
V
I G = ±100 µA, VDS = 0
Gate to source leak current
I GSS
—
—
±10
µA
VGS = ±25 V, VDS = 0
Zero gate voltage drain current I DSS
—
—
250
µA
VDS = 800 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
2.0
—
3.0
V
I D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
RDS(on)
—
1.5
2.0
Ω
ID = 3 A
VGS = 10 V*1
Forward transfer admittance
|yfs|
3.2
5.0
—
S
ID = 3 A
VDS = 20 V*1
Input capacitance
Ciss
—
1700
—
pF
VDS = 10 V
Output capacitance
Coss
—
700
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
315
—
pF
f = 1 MHz
Turn-on delay time
t d(on)
—
25
—
ns
ID = 3 A
Rise time
tr
—
110
—
ns
VGS = 10 V
Turn-off delay time
t d(off)
—
210
—
ns
RL = 10 Ω
Fall time
tf
—
135
—
ns
Body to drain diode forward
voltage
VDF
—
0.85
—
V
I F = 5 A, VGS = 0
Body to drain diode reverse
recovery time
t rr
—
1050
—
ns
I F = 5 A, VGS = 0,
diF / dt = 100 A / µs
Note
1. Pulse Test
3
2SK1773
Maximum Safe Operation Area
Power vs. Temperature Derating
50
Drain Current I D (A)
0.05
10
0
50
100
Case Temperature
150
Tc (°C)
µs
0.3
0.1
t)
)
s
ho
°C
s
m
25
1
(1
=
s
c
m
(T
n
tio
ra
1
40
µs
10
pe
3
0
=
Channel Dissipation
10
10
10
O
80
Operationm in this area
is limited by RDS (on)
PW
120
30
C
D
Pch (W)
160
Ta = 25°C
30
100
300
1000
3000
10000
200
Drain to Source Voltage V
Typical Output Characteristics
DS (V)
Typical Transfer Characteristics
10
5
8V
10 V
5.5 V
8
4
6
Drain Current I D (A)
Drain Current I D (A)
Pulse Test
5V
4
VDS = 10 V
Pulse Test
3
2
Tc = 75°C
4V
25°C
2
1
–25°C
V GS = 3.5 V
0
10
20
30
40
Drain to Source Voltage VDS (V)
4
50
0
2
4
6
8
Gate to Source Voltage VGS (V)
10
2SK1773
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Static Drain to Source on State
Resistance vs. Drain Current
50
Pulse Test
Pulse Test
16
Static Drain–Source on State
Resistance R DS (on) ( Ω)
Drain to Source Saturation Voltage
VDS (on) (V)
20
12
5A
8
4
0
2A
ID = 1 A
8
4
20
10
5
V GS = 10 V
2
1
12
0.5
0.2
20
16
0.5
Static Drain to Source on State
Resistance vs. Temperature
10
20
5
Pulse Test
VGS = 10 V
Forward Transfer Admittance
|y fs| (S)
Static Drain–Source on State
Resistance R DS (on) (Ω )
5
10
6
ID = 5 A
4
2
2A
0
–40
2
Forward Transfer Admittance
vs. Drain Current
10
8
1
Drain Current I D (A)
Gate to Source Voltage VGS (V)
0
40
80
Case Temperature T C (°C)
120
1A
160
Tc = – 25°C
2
25°C
75°C
1
0.5
0.2
V DS = 10 V
Pulse Test
0.1
0.05
0.1
0.2
0.5
1
2
5
Drain Current I D (A)
5
2SK1773
Typical Capacitance vs. Drain
to Source Voltage
Body to Drain Diode Reverse
Recovry Time
10000
2000
Ciss
Capacitance C (pf)
Reverse Recovery Time trr (ns)
5000
1000
500
200
di / dt = 100 A / µs
VGS = 0, Ta =25°C
1000
Coss
100
Crss
100
VGS = 0
f = 1 MHz
50
0.1
0.2
0.5
1
2
5
10
0
10
30
40
50
Drain to Source Voltage VDS (V)
Reverse Drain Current I DR (A)
Dynamic Input Characteristics
1000
20
10
Switching Characteristics
20
500
16
ID= 5 A
VDS
12
V DD = 250 V
400 V
400
8
600 V
V DD = 600 V
200
4
400 V
200
Switing Time t (ns)
600
V GS
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
td (off)
800
tf
100
tr
50
td (on)
20
.
V GS = 10 V, VDD =. 30 V
PW = 2 µs, duty < 1%
10
250 V
0
40
80
120
Gate Charge Qg (nc)
6
160
0
200
5
0.1
0.2
0.5
1
2
Drain Current I D (A)
5
10
2SK1773
Recerse Drain Current vs. Source
to Drain Voltage
Reverse Drain Current I DR (A)
10
Pulse Test
8
6
4
2
VGS = 10 V
0, – 5 V
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1.0
Tc = 25°C
D=1
0.5
0.3
0.2
0.1
0.05
0.1
0.02
0.03
0.01
10 µ
hot
1s
θ ch – c(t) = γ s(t) . θ ch – c
θ ch – c = 1.25°C / W, Tc = 25°C
PW
D= T
P DM
se
Pul
0.01
100 µ
T
1m
10 m
100 m
PW
1
10
Pulse Width PW (S)
7
2SK1773
Switching Time Test Circuit
Waveforms
Vin Monitor
90 %
Vout Monitor
D.U.T
Vin
10 %
RL
Vout
Vin
10 V
50 Ω
.
V DD =. 30 V
90 %
td (on)
8
10 %
tr
10 %
90 %
td (off)
tf
15.6 ± 0.3
1.5
0.3
19.9 ± 0.2
2.0
14.9 ± 0.2
0.5
1.0
φ3.2 ± 0.2
5.0 ± 0.3
Unit: mm
4.8 ± 0.2
1.6
2.0
1.4 Max
18.0 ± 0.5
2.8
1.0 ± 0.2
3.6
5.45 ± 0.5
0.6 ± 0.2
0.9
1.0
5.45 ± 0.5
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-3P
—
Conforms
5.0 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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