HITACHI 2SK1336

2SK1336
Silicon N-Channel MOS FET
Application
High speed power switching
Features
•
•
•
•
Low on-resistance
High speed switching
Low drive current
4 V gate drive device
 Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
TO-92
D
32
1
1. Source
2. Drain
3. Gate
G
S
2SK1336
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
0.3
A
1.2
A
1
Drain peak current
I D(pulse)*
Body to drain diode reverse drain current
I DR
0.3
A
Channel dissipation
Pch
400
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSS
60
—
—
V
I D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±20
—
—
V
I G = ±100 µA, VDS = 0
Gate to source leak current
I GSS
—
—
±10
µA
VGS = ±16 V, VDS = 0
Zero gate voltage drain current I DSS
—
—
50
µA
VDS = 50 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
—
2.0
V
I D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
RDS(on)
—
1.3
1.7
Ω
I D = 0.2 A, VGS = 10 V *1
—
1.8
2.5
Ω
I D = 0.2 A, VGS = 4 V *1
Forward transfer admittance
|yfs|
0.22
0.35
—
S
I D = 0.2 A, VDS = 10 V *1
Input capacitance
Ciss
—
33
—
pF
VDS = 10 V, VGS = 0,
Output capacitance
Coss
—
17
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
5
—
pF
Turn-on delay time
t d(on)
—
2
—
ns
I D = 0.2 A, VGS = 10 V,
Rise time
tr
—
4
—
ns
RL = 150 Ω
Turn-off delay time
t d(off)
—
18
—
ns
Fall time
tf
—
16
—
ns
Body to drain diode forward
voltage
VDF
—
0.9
—
V
I F = 0.3 A, VGS = 0
Body to drain diode reverse
recovery time
t rr
—
45
—
ns
I F = 0.3 A, VGS = 0,
diF/dt = 50 A/µs
Note:
2
1. Pulse test
2SK1336
Maximum Safe Operation Area
Power vs. Temperature Derating
5
3
0.8
Drain Current ID (A)
Drain Current ID (A)
VDS = 10 V
Pulse Test
0.6
0.4
0.2
VGS = 2 V
0
2
6
8
4
10
Drain to Source Voltage VDS (V)
)
2.5 V
0.2
)
°C
3V
0.4
ot
Typical Transfer Characteristics
4V
0.6
0.3
1
3
10
30
100
Drain to Source Voltage VDS (V)
1.0
Pulse Test
3.5 V
µs
6V
25
0.8
10 V
=
(T C
Typical Output Characteristics
1.0
Sh
n
0.005
0.1
150
(1
tio
50
100
Ambient Temperarure Ta (°C)
s
m
ra
Ta = 25°C
0.01
0
m
s
pe
0.03
µs
10
0.1
1
=
0.3
O
200
)
i
th (on
in R DS
n
y
io b
at d
er ite
Op lim
is
0
10
400
r
sa
PW
Drain Current ID (A)
10
ea
1
C
D
Channel Dissipation Pch (mW)
600
0
25°C
TC = 75°C
–25°C
1
3
4
2
Gate to Source Voltage VGS (V)
5
3
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
1.0
Static Drain to Source on State
Resistance vs. Drain Current
Pulse Test
0.8
0.5 A
0.6
0.4
0.2 A
0.2
ID = 0.1A
0
2
6
8
4
10
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
RDS (on) (Ω)
Drain to Source Saturation Voltage VDS (on) (V)
2SK1336
50
Pulse Test
20
10
5
VGS = 4 V
2
10 V
1
0.5
0.05 0.1
4
5
Pulse Test
4
ID = 0.5 A 0.2 A
3
0.1 A
VGS = 4 V
2
1
0
–40
0.5 A
10 V
0.2 A
0.1 A
0
80
120
40
Case Temperature TC (°C)
5
Forward Transfer Admittance
vs. Drain Current
160
Forward Transfer Admittance yfs (S)
Static Drain to Source on State Resistance
RDS (on) (Ω)
Static Drain to Source on State
Resistance vs. Temperature
0.2
0.5
1
2
Drain Current ID (A)
5
2
VDS = 10 V
Pulse Test
1
0.5
0.2
25°C
–25°C
TC = 75°C
0.1
0.05
0.02
0.05 0.1 0.2
0.5
1
Drain Current ID (A)
2
2SK1336
Typical Capacitance vs.
Drain to Source Voltage
Body to Drain Diode Reverse
Recovery Time
100
500
di/dt = 50 A/µs
VGS = 0, Ta = 25°C
Pulse Test
Ciss
Capacitance C (pF)
Reverse Recovery Time trr (ns)
1,000
200
100
50
Coss
10
Crss
1
20
VGS = 0
f = 1 MHz
0.1
10
0.05
0.1 0.2
0.5
1
2
Reverse Drain Current IDR (A)
0
5
20
10
30
40
Drain to Source Voltage VDS (V)
Switching Characteristics
Dynamic Input Characteristics
VGS
12
40
20
0
0
8
VDD = 50 V
25 V
10 V
4
ID = 0.3 A
0.8
2.4
3.2
1.6
Gate Charge Qg (nc)
0
4.0
50
Switching Time t (ns)
VDS
16
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
VDD = 10 V
25 V
50 V
80
60
100
20
100
50
VGS = 10 V, PW = 2 µs
.
duty < 1%, VDD =. 30 V
tf
td (off)
20
10
5
tr
td (on)
2
1
0.05
0.1
0.2
0.5
1
2
Drain Current ID (A)
5
5
2SK1336
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current IDR (A)
1.0
Pulse Test
0.8
0.6
0.4
10 V
0.2
5V
VGS = 0, –5 V
0
6
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
Unit: mm
4.8 ± 0.3
0.7
0.60 Max
0.5 ± 0.1
12.7 Min
2.3 Max
5.0 ± 0.2
3.8 ± 0.3
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-92 (1)
Conforms
Conforms
0.25 g
Cautions
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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