HITACHI 2SK1334

2SK1334
Silicon N-Channel MOS FET
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
No secondary Breakdown
Suitable for switching regulator and DC-DC converter
Outline
UPAK
3
2 1
4
D
1. Gate
2. Drain
3. Source
4. Drain
G
S
2SK1334
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
200
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
1
A
2
A
1
A
Drain peak current
I D(pulse)*
Body to drain diode reverse drain current
I DR
2
1
Channel dissipation
Pch*
1
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the alumina ceramic board (12.5 × 20 × 0.7 mm)
2
2SK1334
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSS
200
—
—
V
I D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±20
—
—
V
I G = ±100 µA, VDS = 0
Gate to source leak current
I GSS
—
—
±10
µA
VGS = ±16 V, VDS = 0
Zero gate voltage drain current I DSS
—
—
50
µA
VDS = 160 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
2.0
—
4.0
V
I D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
RDS(on)
—
2.5
3.8
Ω
I D = 0.5 A, VGS = 10 V *1
—
4.5
7.0
Ω
I D = 2 A, VGS = 10 V *1
Forward transfer admittance
|yfs|
0.4
0.6
—
S
I D = 0.5 A, VDS = 10 V *1
Input capacitance
Ciss
—
80
—
pF
VDS = 10 V, VGS = 0,
Output capacitance
Coss
—
40
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
7
—
pF
Turn-on delay time
t d(on)
—
5
—
ns
I D = 0.5 A, VGS = 10 V,
Rise time
tr
—
8
—
ns
RL = 60 Ω
Turn-off delay time
t d(off)
—
10
—
ns
Fall time
tf
—
7
—
ns
Body to drain diode forward
voltage
VDF
—
1.0
—
V
I F = 1 A, VGS = 0
Body to drain diode reverse
recovery time
t rr
—
75
—
ns
I F = 1 A, VGS = 0,
diF/dt = 50 A/µs
Notes: 1. Pulse test
2. Marking for 2SK1334 is “BY”.
3
2SK1334
Maximum Safe Operation Area
Power vs. Temperature Derating
5
Test Condition:
When using alumina
ceramic board(12.5×20×0.7mm)
a
are )
his S (on
t
10
in R D
ion by
µs
t
1
a
d
00
er ite
p
P
1
µ
O lim
W
m s
is
=
s
D
10
C
O
m
pe
s
(1
ra
tio
Sh
n
ot
(T
)
C =
25
°C
)
Ta = 25°C
2
Drain Current ID (A)
Channel Dissipation Pch (W)
1.2
0.8
0.4
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
50
100
Ambient Temperature Ta (°C)
1
150
Typical Transfer Characteristics
Typical Output Characteristics
2.0
2.0
Drain Current ID (A)
1.2
8V
7V
Pulse Test
1.6
Drain Current ID (A)
10 V
1.6
6V
0.8
5V
0.4
0.8
0.4
VGS = 3 V
4
4
12
16
8
Drain to Source Voltage VDS (V)
20
VDS = 10 V
Pulse Test
1.2
4V
0
3
30
300 1,000
10
100
Drain to Source Voltage VDS (V)
0
75°C
TC = 25°C
–25°C
2
6
8
4
Gate to Source Voltage VGS (V)
10
20
Pulse Test
16
12
ID = 2 A
8
4
1A
0.5 A
0
4
12
16
8
Drain to Source Voltage VGS (V)
20
Static Drain to Source on State Resistance
RDS (on) (Ω)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Static Drain to Source on State
Resistance vs. Drain Current
50
Pulse Test
20
10
15 V
2
1
0.5
0.05
8
6
ID = 2 A
1A
0.5 A
4
2
0
–40
40
0
80
120
Case Temperature TC (°C)
0.1
0.5
2
1
0.2
Drain Current ID (A)
5
Forward Transfer Admittance
vs. Drain Current
10
VGS = 10 V
Pulse Test
VGS = 10 V
5
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance yfs (S)
Static Drain to Source on State Resistance
RDS (on) (Ω)
Drain to Source Saturation Voltage VDS (on) (V)
2SK1334
160
5
VDS = 10 V
Pulse Test
2
–25°C
TC = 25°C
75°C
1
0.5
0.2
0.1
0.05
0.1
0.5
2
1
0.2
Drain Current ID (A)
5
5
2SK1334
Reverse Recovery Time vs.
Reverse Drain Current
Typical Capacitance vs.
Drain to Source Voltage
1,000
di/dt = 50 A/µs, Ta = 25°C
VGS = 0
VGS = 0
f = 1 MHz
200
Capacitance C (pF)
Reverse Recovery Time t rr (ns)
500
100
50
20
100
Ciss
Coss
10
10
Crss
5
0.05
0.1 0.2
0.5
2
1
Reverse Drain Current IDR (A)
1
5
0
Switching Characteristics
Dynamic Input Characteristics
300
100
16
12
VGS
ID = 1 A
VDS
8
VDD = 150 V
100 V
50 V
4
0
0
6
2
6
8
4
Gate Charge Qg (nc)
10
VGS = 10 V, VDD = 30 V
PW = 2 µs, duty < 1%
50
Switching Time t (ns)
VDD = 150 V
100 V
400
50 V
200
100
20
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
500
10
30
40
20
50
Drain to Source Voltage VDS (V)
20
tf
td (off)
10
tr
5
td (on)
2
1
0.05
0.1
0.5
1
2
0.2
Drain Current ID (A)
5
2SK1334
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Dratin Current IDR (A)
2.0
Pulse Test
1.6
1.2
0.8
10 V, 15 V
0.4
VGS = 0, –5 V
0
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
7
Unit: mm
1.5 1.5
3.0
0.44 Max
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
(0.2)
(2.5)
(1.5)
(0.4)
0.53 Max
0.48 Max
1.5 ± 0.1
0.44 Max
2.5 ± 0.1
4.25 Max
φ1
0.8 Min
1.8 Max
0.4
4.5 ± 0.1
UPAK
—
Conforms
0.050 g
Cautions
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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products.
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