SEMICONDUCTOR KTA1862D/L TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE SWITCHING. POWER SUPPLY SWITCHING FOR TELEPHONES. A I C J D FEATURES High Breakdown Voltage, Typically : BVCEO=-400V. : tf= K O E Q : VCE(sat)=-0.5V(Max.) at (IC=0.5A) High Switching Speed, Typically M B Low Collector Saturation Voltage. H 0.4 S at IC=-1A P F Wide Safe Operating Area (SOA) 1 L F 2 3 DIM A B C D E F H I J K L M O P Q MILLIMETERS _ 0.2 6.60 + _ 0.2 6.10 + _ 0.2 5.0 + _ 0.2 1.10 + _ 0.2 2.70 + _ 0.1 2.30 + 1.00 MAX _ 0.2 2.30 + _ 0.1 0.5 + _ 0.20 2.00 + _ 0.10 0.50 + _ 0.10 0.91+ _ 0.1 0.90 + _ 0.10 1.00 + 0.95 MAX 1. BASE 2. COLLECTOR 3. EMITTER ) SYMBOL RATING UNIT Collector-Base Voltage VCBO -400 V Collector-Emitter Voltage VCEO -400 V Emitter-Base Voltag VEBO -7 V DC IC -2.0 Pulse ICP -4.0 Collector Current DPAK I A C B D J A Q CHARACTERISTIC K MAXIMUM RATING (Ta=25 P H Ta=25 Dissipation Tc=25 Junction Temperature Storage Temperature Range 1.0 PC G E Collector Power W 10 F Tj 150 Tstg -55 150 1 F 2 L 3 DIM A B C D E F G H I J K L P Q MILLIMETERS _ 0.2 6.60 + _ 0.2 6.10 + _ 5.0 + 0.2 _ 0.2 1.10 + _ 0.6 9.50 + _ 0.1 2.30 + _ 0.1 0.76 + 1.0 MAX _ 0.2 2.30 + _ 0.1 0.5 + _ 0.2 2.0 + _ 0.1 0.50 + _ 0.1 1.0 + 0.90 MAX 1. BASE 2. COLLECTOR 3. EMITTER IPAK ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut of Current ICBO VCB=-400V - - -1.0 A Emitter Cut of Current IEBO VEB=-5V - - -1.0 Collector-Base Breakdown Voltage BVCBO -400 - - Collector-Emitter Breakdown Voltage BVCEO IC=-50 A IC=-1mA A V -400 - Emitter-Base Breakdown Voltage BVEBO - V -7 - - V hFE(1) Note IE=-50 A VCE=-5V, IC=-100mA 56 100 180 hFE(2) VCE=-5V, IC=-500mA 6 - - Collector-Emitter Saturation Voltage VCE(sat) IC=-500mA, IB=-100mA - -0.3 -0.5 Base-Emitter Saturation Voltage VBE(sat) IC=-500mA, IB=-100mA - - -1.2 V VCE=-10V, IE=-100mA, f=5MHz - 18 - MHz VCB=-10V, IE=0mA, f=1MHz - 30 - pF - 0.2 - - -1.8 - - 0.4 - fT Transition Frequency Cob Collector Output Capacitance ton Turn-on Time Switching Time tstg Turn-off Time OUTPUT I B2 INPUT 0 IB1 20µsec tf Storage Time Note : hFE(1) Classification 2003. 3. 27 O:56~120, -IB1 =IB2=0.2A DUTY CYCLE < = 1% I B2 I B1 150Ω DC Current Gain VCC =-150V V S Y:82~180. Revision No : 4 1/3 KTA1862D/L h FE - I C I C - V CE -0.5 -0.4 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (A) 1K -5.0mA -4.5mA -4.0mA Ta=25 C -3.5mA -3.0mA -2.5mA -0.3 -2.0mA -0.2 -1.5mA -1.0mA -0.1 I B =-0.5mA 0 0 -2 -4 -6 -8 Ta=25 C VCE =-5V 300 100 30 10 3 1 -0.001 -10 -0.01 -0.1 I C - V BE TRANSIENT THERMAL RESISTANCE r th ( C/W) COLLECTOR CURRENT I C (A) r th - t w Ta=25 C VCE =-5V -1 -0.3 -0.1 -0.03 -0.01 -0.003 -0.001 0 -0.2 -0.4 -0.6 -0.8 -3 COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER VOLTAGE VCE (V) -5 -1 -1.0 -1.2 CURVES SHOULD BE APPLIED IN THERMAL LIMITED AREA. (SIGLE NONREPETITIVE PULSE) 1 INFINITE HEAT SINK 2 NO HEAT SINK 100 2 10 1 1 0.1 -1.4 0.001 0.01 BASE-EMITTER VOLTAGE VBE (V) 0.1 1 10 100 1K PULSE WIDTH t w (sec) SAFE OPERATING AREA -10 I C MAX(PULSE) * COLLECTOR CURRENT I C (A) 12 10 8 Tc =2 5 6 C 4 2 Ta=25 C -3 I C MAX(DC) -1 DC O Tc PER =2 A 5 TI C ON -0.3 -0.1 * SINGLE NONREPETITIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE -0.03 0 0 25 50 75 100 125 AMBIENT TEMPERATURE Ta ( C) 150 * mS * 10 S 0m 10 COLLECTOR DISSIPATION PC (W) PC - Ta -0.01 -1 -3 -10 -30 -100 -300 -1K COLLECTOR-EMITTER VOLTAGE VCE (V) 2003. 3. 27 Revision No : 4 2/3 KTA1862D/L SATURATION VOLTAGE VCE(sat) ,V BE(sat) (V) -10 -3 f T - IE TRANSITION FREQUENCY f T (MHz) VCE(sat) , V BE(sat) - I C Ta=25 C I C /I B =5 -1 VBE(sat) -0.3 -0.1 VCE(sat) -0.03 -0.01 -0.001 -0.01 -0.1 -1 -3 100 30 10 5 3 1 0.001 100 0.03 10 Ta=25 C f=1MHz I E =0A Cib 300 0.01 0.1 0.3 1 Switching time TURN ON TIME t on (µs) STORAGE TIME t stg (µs) FALL TIME t f (µs) COLLECTOR OUTPUT CAPACITANCE C ob (pF) EMITTER INPUT CAPACITANCE C ib (pF) 2003. 3. 27 C ob - V CB , C ib - VEB 500 0.03 EMITTER CURRENT I E (A) COLLECTOR CURRENT I C (A) 1K Ta=25 C VCE =-10V 50 Cob 50 30 Ta=25 C I C =5I B1 =-5I B2 5 3 1 0.5 t stg 0.3 tf t on 10 -0.1 -0.3 -1 -3 -10 -30 COLLECTOR TO BASE VOLTAGE V CB (V) EMITTER TO BASE VOLTAGE V EB (V) Revision No : 4 -100 0.1 -0.1 -0.3 -0.5 -1 -3 -5 -10 COLLECTOR CURRENT I C (A) 3/3