KEC KTA1040D

SEMICONDUCTOR
KTA1040D/L
TECHNICAL DATA
EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
DPAK FOR SVRFACE MOUNT APPLICATIONS.
A
I
C
J
D
FEATURES
Low Collector Saturation Voltage
B
: VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A.
M
O
K
Complementary to KTC2020D/L.
E
Q
Straight Lead (IPAK, "L" Suffix)
H
P
F
1
)
RATING
UNIT
Collector-Base Voltage
VCBO
-60
V
Collector-Emitter Voltage
VCEO
-60
V
Emitter-Base Voltage
VEBO
-7
V
Collector Current
IC
-3
A
Base Current
IB
-0.5
A
Tc=25
Storage Temperature Range
DPAK
I
A
C
D
J
W
20
Tj
150
Tstg
-55 150
Junction Temperature
3. EMITTER
B
Dissipation
1.0
PC
2. COLLECTOR
K
Ta=25
MILLIMETERS
_ 0.2
6.60 +
_ 0.2
6.10 +
_ 0.2
5.0 +
_
1.10 + 0.2
_ 0.2
2.70 +
_ 0.1
2.30 +
1.00 MAX
_ 0.2
2.30 +
_ 0.1
0.5 +
_ 0.20
2.00 +
_ 0.10
0.50 +
_ 0.10
0.91+
_ 0.1
0.90 +
_ 0.10
1.00 +
0.95 MAX
1. BASE
SYMBOL
Collector Power
3
Q
CHARACTERISTIC
2
P
H
G
E
MAXIMUM RATING (Ta=25
L
F
DIM
A
B
C
D
E
F
H
I
J
K
L
M
O
P
Q
F
1
F
2
L
3
DIM
A
B
C
D
E
F
G
H
I
J
K
L
P
Q
MILLIMETERS
_ 0.2
6.60 +
_ 0.2
6.10 +
_ 0.2
5.0 +
_ 0.2
1.10 +
_ 0.6
9.50 +
_ 0.1
2.30 +
_ 0.1
0.76 +
1.0 MAX
_ 0.2
2.30 +
_ 0.1
0.5 +
_ 0.2
2.0 +
_ 0.1
0.50 +
_ 0.1
1.0 +
0.90 MAX
1. BASE
2. COLLECTOR
3. EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
IPAK
)
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
MIN.
TYP.
MAX.
UNIT
-
-
-100
A
VEB=-7V, IC=0
-
-
-100
IC=-50mA, IB=0
-60
-
-
A
V
VCE=-5V, IC=-0.5A
100
-
300
hFE(2)
VCE=-5V, IC=-3A
20
-
-
VCE(sat)
IC=-2A, IB=-0.2A
-
-0.25
-1.0
VCB=-60V, IE=0
IEBO
V(BR)CEO
hFE(1)(Note)
DC Current Gain
Collector Emitter Saturation Voltage
TEST CONDITION
ICBO
V
Base-Emitter Voltage
VBE
VCE=-5V, IC=-0.5A
-
-0.7
-1.0
V
Transition Frequency
fT
VCE=-5V, IC=-0.5A
-
30
-
MHz
VCB=-10V, IE=0, f=1MHz
-
45
-
pF
-
0.4
-
15Ω
-
1.7
-
VCC =-30V
-
0.5
-
Cob
Collector Output Capacitance
OUTPUT
ton
Turn-on Time
I B2
INPUT
0
Switching Time
tstg
Storage Time
IB1
20µsec
tf
Fall Time
Note : hFE(1) Classification
2003. 3. 27
Y:100~200,
-IB1 =IB2=0.2A
DUTY CYCLE <
= 1%
I B1
I B2
S
GR:150~300.
Revision No : 5
1/2
KTA1040D/L
I C - V CE
COLLECTOR CURRENT I C (A)
-80
-3
-60
-70
COLLECTOR-EMITTER SATURATION
VOLTAGE V CE(sat) (V)
VCE(sat) - I C
-4
COMMON
EMITTER
Tc=25 C
-50
-40
-2
-30
-20
IB =-10mA
-1
0
0
-1
-2
-3
-4
-5
-6
-1
COMMON EMITTER
IC /I B =10
-0.5
-0.3
C
00
=1
Tc
-0.1
Tc=25 C
Tc=-25 C
-0.05
-0.02
-0.02
-0.1
COLLECTOR-EMITTER VOLTAGE VCE (V)
-0.3
-1
-3
-5
COLLECTOR CURRENT I C (A)
SAFE OPERATING AREA
-10
50
20
-0.02
-0.1
-0.3
-1
-3
DC
*
Tc=-25 C
100
-3
*
mS
S*
Tc=25 C
I C MAX.
(CONTINUOUS)
0m
Tc=100 C
300
-5
1mS
VCE =-5V
500
10
COLLECTOR CURRENT I C (A)
COMMON EMITTER
I C MAX.
(PULSED) *
10
DC CURRENT GAIN h FE
1k
O
Tc PE
=2 RA
5 TI
C ON
-1
-0.5
* SINGLE NONREPETITIVE
PULSE Tc=25 C
-0.3
VCEO MAX.
h FE - I C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
-0.1
COLLECTOR CURRENT I C (A)
-1
-3
-10
-5
-30 -50
-100
COLLECTOR-EMITTER VOLTAGE VCE (V)
1k
Pc - Ta
(1) WITHOUT HEAT SINK
(2) INFINITE HEAT SINK
100
(1) Ta=25 C
10
(2) Tc=25 C
1
0.1
10
-3
10
-2
10
-1
1
TIME t (sec)
2003. 3. 27
COLLECTOR POWER DISSIPATION
PC (W)
TRANSIENT THERMAL RESISTANCE
R th(t) ( C/W)
R th(t) - t
Revision No : 5
10
10
2
32
28
24
20
16
Tc
=2
5
12
C
8
4
Ta=25 C
0
0
25
50
75
100
125
150
175 200
AMBIENT TEMPERATURE Ta ( C)
2/2