SEMICONDUCTOR KTA1040D/L TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. DPAK FOR SVRFACE MOUNT APPLICATIONS. A I C J D FEATURES Low Collector Saturation Voltage B : VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. M O K Complementary to KTC2020D/L. E Q Straight Lead (IPAK, "L" Suffix) H P F 1 ) RATING UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -7 V Collector Current IC -3 A Base Current IB -0.5 A Tc=25 Storage Temperature Range DPAK I A C D J W 20 Tj 150 Tstg -55 150 Junction Temperature 3. EMITTER B Dissipation 1.0 PC 2. COLLECTOR K Ta=25 MILLIMETERS _ 0.2 6.60 + _ 0.2 6.10 + _ 0.2 5.0 + _ 1.10 + 0.2 _ 0.2 2.70 + _ 0.1 2.30 + 1.00 MAX _ 0.2 2.30 + _ 0.1 0.5 + _ 0.20 2.00 + _ 0.10 0.50 + _ 0.10 0.91+ _ 0.1 0.90 + _ 0.10 1.00 + 0.95 MAX 1. BASE SYMBOL Collector Power 3 Q CHARACTERISTIC 2 P H G E MAXIMUM RATING (Ta=25 L F DIM A B C D E F H I J K L M O P Q F 1 F 2 L 3 DIM A B C D E F G H I J K L P Q MILLIMETERS _ 0.2 6.60 + _ 0.2 6.10 + _ 0.2 5.0 + _ 0.2 1.10 + _ 0.6 9.50 + _ 0.1 2.30 + _ 0.1 0.76 + 1.0 MAX _ 0.2 2.30 + _ 0.1 0.5 + _ 0.2 2.0 + _ 0.1 0.50 + _ 0.1 1.0 + 0.90 MAX 1. BASE 2. COLLECTOR 3. EMITTER ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC IPAK ) SYMBOL Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage MIN. TYP. MAX. UNIT - - -100 A VEB=-7V, IC=0 - - -100 IC=-50mA, IB=0 -60 - - A V VCE=-5V, IC=-0.5A 100 - 300 hFE(2) VCE=-5V, IC=-3A 20 - - VCE(sat) IC=-2A, IB=-0.2A - -0.25 -1.0 VCB=-60V, IE=0 IEBO V(BR)CEO hFE(1)(Note) DC Current Gain Collector Emitter Saturation Voltage TEST CONDITION ICBO V Base-Emitter Voltage VBE VCE=-5V, IC=-0.5A - -0.7 -1.0 V Transition Frequency fT VCE=-5V, IC=-0.5A - 30 - MHz VCB=-10V, IE=0, f=1MHz - 45 - pF - 0.4 - 15Ω - 1.7 - VCC =-30V - 0.5 - Cob Collector Output Capacitance OUTPUT ton Turn-on Time I B2 INPUT 0 Switching Time tstg Storage Time IB1 20µsec tf Fall Time Note : hFE(1) Classification 2003. 3. 27 Y:100~200, -IB1 =IB2=0.2A DUTY CYCLE < = 1% I B1 I B2 S GR:150~300. Revision No : 5 1/2 KTA1040D/L I C - V CE COLLECTOR CURRENT I C (A) -80 -3 -60 -70 COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (V) VCE(sat) - I C -4 COMMON EMITTER Tc=25 C -50 -40 -2 -30 -20 IB =-10mA -1 0 0 -1 -2 -3 -4 -5 -6 -1 COMMON EMITTER IC /I B =10 -0.5 -0.3 C 00 =1 Tc -0.1 Tc=25 C Tc=-25 C -0.05 -0.02 -0.02 -0.1 COLLECTOR-EMITTER VOLTAGE VCE (V) -0.3 -1 -3 -5 COLLECTOR CURRENT I C (A) SAFE OPERATING AREA -10 50 20 -0.02 -0.1 -0.3 -1 -3 DC * Tc=-25 C 100 -3 * mS S* Tc=25 C I C MAX. (CONTINUOUS) 0m Tc=100 C 300 -5 1mS VCE =-5V 500 10 COLLECTOR CURRENT I C (A) COMMON EMITTER I C MAX. (PULSED) * 10 DC CURRENT GAIN h FE 1k O Tc PE =2 RA 5 TI C ON -1 -0.5 * SINGLE NONREPETITIVE PULSE Tc=25 C -0.3 VCEO MAX. h FE - I C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE -0.1 COLLECTOR CURRENT I C (A) -1 -3 -10 -5 -30 -50 -100 COLLECTOR-EMITTER VOLTAGE VCE (V) 1k Pc - Ta (1) WITHOUT HEAT SINK (2) INFINITE HEAT SINK 100 (1) Ta=25 C 10 (2) Tc=25 C 1 0.1 10 -3 10 -2 10 -1 1 TIME t (sec) 2003. 3. 27 COLLECTOR POWER DISSIPATION PC (W) TRANSIENT THERMAL RESISTANCE R th(t) ( C/W) R th(t) - t Revision No : 5 10 10 2 32 28 24 20 16 Tc =2 5 12 C 8 4 Ta=25 C 0 0 25 50 75 100 125 150 175 200 AMBIENT TEMPERATURE Ta ( C) 2/2