CM900DU-24NF Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Mega Power Dual™ IGBTMOD 900 Amperes/1200 Volts TC MEASURED POINTS (THE SIDE OF CU BASEPLATE) A D G P (8 PLACES) U H L H K C2E1 C C G E E G J F S C B E Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. T J E2 F C1 U V H H H H G H R (9 PLACES) H L M G LABEL Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking G2 E2 C2 C2E1 E2 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches Millimeters A 5.91 150.0 J 1.50±0.01 38.0±0.25 0.16 4.0 B 5.10 129.5 K C 1.67±0.01 42.5±0.25 L D 5.41±0.01 137.5±0.25 E 6.54 1.36 +0.04/-0.02 34.6 +1.0/-0.5 M 0.075±0.08 1.9±0.2 166.0 P 0.26 6.5 74.0±0.25 F 2.91±0.01 R M6 Metric G 1.65 42.0 U 0.62 15.7 H 0.55 14.0 V 0.71 18.0 Housing Type (J.S.T. MFG. CO. LTD) S = VHR-2N T = VHR-5N M6 Applications: □ High Power UPS □ Large Motor Drives □ Utility Interface Inverters Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM900DU-24NF is a 1200V (VCES), 900 Ampere Dual IGBTMOD Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 900 24 1 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM900DU-24NF Mega Power Dual™ IGBTMOD 900 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Ratings Junction Temperature Symbol CM900DU-24NF Units Tj -40 to 150 °C Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts IC 900 Amperes ICM 1800* Amperes IE 900 Amperes Peak Emitter Current** IEM 1800* Amperes Maximum Collector Dissipation (Tj < 150°C) (TC' = 25°C) PC 5950 Watts Mounting Torque, M6 Mounting Screws – 40 in-lb Mounting Torque, M6 Main Terminal Screw – 40 in-lb – 1400 Grams Viso 2500 Volts Storage Temperature Collector Current (TC = 25°C) Peak Collector Current (Tj ≤ 150°C) Emitter Current (TC = 25°C)** Weight (Typical) Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Static Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Collector-Cutoff Current Gate Leakage Current Min. Typ. Max. ICES VCE = VCES, VGE = 0V Test Conditions – – 1 IGES VGE = VGES, VCE = 0V – – 0.5 Gate-Emitter Threshold Voltage VGE(th) IC = 90mA, VCE = 10V 6 7 8 Collector-Emitter Saturation Voltage Units mA µA Volts VCE(sat) IC = 900A, VGE = 15V, Tj = 25°C – 1.9 2.5 Volts (Without Lead Resistance) (Chip) IC = 900A, VGE = 15V, Tj = 125°C – 2.1 – Volts Module Lead Resistance – mΩ – nC R(lead) IC = 900A, Terminal-chip – Total Gate Charge QG VCC = 600V, IC = 900A, VGE = 15V – 4800 0.143 Emitter-Collector Voltage** VEC IE = 900A, VGE = 0V – – Min. Typ. – – 140 3.4 Volts Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Units Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Inductive Turn-on Delay Time td(on) Load Rise Time tr td(off) VGE1 = VGE2 = 15V, – – 800 ns tf RG = 1.0⍀, – – 300 ns Switch Turn-off Delay Time Times Fall Time VCE = 10V, VGE = 0V nF – – 16 nF – – 3 nF VCC = 600V, – – 300 ns IC = 900A, IE = 900A, – – 200 ns Diode Reverse Recovery Time** trr Inductive Load – – 500 ns Diode Reverse Recovery Charge** Qrr Switching Operation – 50 – µC * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 Max. Input Capacitance Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM900DU-24NF Mega Power Dual™ IGBTMOD 900 Amperes/1200 Volts Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Thermal Resistance, Junction to Case Rth(j-c')Q Per IGBT 1/2 Module, – – Max. 0.021 Units °C/W Thermal Resistance, Junction to Case Rth(j-c')D Per FWDi 1/2 Module, TC Reference – – 0.034 °C/W Rth(c-f) Per 1/2 Module, Thermal Grease Applied – 0.016 – °C/W TC Reference Point Under Chip TC Reference Point Under Chip Contact Thermal Resistance OUTPUT CHARACTERISTICS (TYPICAL) 1400 1400 1200 1200 1000 1000 11 800 600 10 400 200 9 8 0 800 600 400 200 0 0 1 2 3 4 5 6 7 8 9 10 VGE = 15V Tj = 25°C Tj = 125°C 4 3 2 1 0 0 4 8 12 16 20 0 300 600 900 1200 1500 1800 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 104 10 103 Tj = 25°C 8 6 IC = 900A 4 IC = 360A IC = 1800A 2 0 0 4 8 12 16 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 20 EMITTER CURRENT, IE, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) VCE = 10V Tj = 25°C Tj = 125°C 1600 103 Tj = 25°C Tj = 125°C 102 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) CAPACITANCE, Cies, Coes, Cres, (nF) COLLECTOR CURRENT, IC, (AMPERES) 13 5 1800 Tj = 25oC 12 15 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) VGE = 20V 1600 COLLECTOR CURRENT, IC, (AMPERES) 1800 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) VGE = 0V Cies 102 Coes 101 Cres 100 10-1 10-1 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 3 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM900DU-24NF Mega Power Dual™ IGBTMOD 900 Amperes/1200 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) td(on) 102 tr 101 101 102 trr 102 VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 25°C Inductive Load 101 101 103 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 100 10-3 10-2 10-1 100 10-1 10-1 10-2 10-2 10-5 TIME, (s) 4 10-4 101 103 16 VCC = 400V VCC = 600V 12 8 4 0 1000 2000 3000 4000 5000 6000 7000 0 10-3 10-3 GATE CHARGE, QG, (nC) SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) 101 Per Unit Base Rth(j-c) = 0.021°C/W (IGBT) Rth(j-c) = 0.034°C/W (FWDi) Single Pulse TC = 25°C 10-3 102 IC = 900A EMITTER CURRENT, IE, (AMPERES) 102 103 SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) COLLECTOR CURRENT, IC, (AMPERES) 101 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) td(off) Irr REVERSE RECOVERY CURRENT, Irr, (AMPERES) tf GATE CHARGE, VGE 103 102 VCC = 600V VGE = 15V Tj = 125°C RG = 1.0Ω ESW(on) ESW(off) Inductive Load SWITCHING LOSS, Err, (mJ/PULSE) 103 VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 125°C Inductive Load 103 REVERSE RECOVERY TIME, trr, (ns) SWITCHING TIME, (ns) 104 REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 101 100 101 102 COLLECTOR CURRENT, IC, (AMPERES) 103 SWITCHING LOSS VS. EMITTER CURRENT (TYPICAL) VCC = 600V VGE = 15V Tj = 125°C RG = 1.0Ω Inductive Load 101 100 101 102 EMITTER CURRENT, IE, (AMPERES) 103