ST2301M P Channel Enhancement Mode MOSFET -3.0A DESCRIPTION The ST2301M is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outline surface mount package. FEATURE PIN CONFIGURATION SOT-23 z 3 z D z G S z 1 2 z 1.Gate 2.Source -20V/-2.8A, RDS(ON) = 130m-ohm (Typ.) @VGS = -4.5V -20V/-2.0A, RDS(ON) = 220m-ohm @VGS = -2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design 3.Drain PART MARKING SOT-23 3 S01YA 1 Y: Year Code 2 A: Process Code ORDERING INFORMATION Part Number Package Part Marking ST2301MSRG SOT-23 S01YA ※ Process Code : A ~ Z ; a ~ z ※ ST2301MSRG S : SOT-23 ; R : Tape Reel ; G : Pb – Free 1 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2301M 2007. V1 ST2301M P Channel Enhancement Mode MOSFET -3.0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±12 V ID -2.5 -1.5 A IDM -10 A Continuous Source Current (Diode Conduction) IS -1.6 A TA=25℃ TA=70℃ PD 1.25 0.8 W TJ 150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 120 Continuous Drain CurrentTJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Power Dissipation Operation Junction Temperature ℃/W 2 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2301M 2007. V1 ST2301M P Channel Enhancement Mode MOSFET -3.0A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit V(BR)DSS VGS=0V,ID=-250uA -20 VGS(th) VDS=VGS,ID=-250uA -0.48 IGSS Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) Drain-source On-Resistance RDS(on) Forward Transconductance gfs Diode Forward Voltage VSD V -1.5 V VDS=0V,VGS=±12V ±100 nA VDS=-20V,VGS=0V -1 VDS=-20V,VGS=0V TJ=55℃ -10 VDS≦-5V,VGS=-4.5V VDS≦-5V,VGS=-2.5V VGS=-4.5V,ID=-2.8A VGS=-2.5V,ID=-2.0A -6 -3 uA A 0.135 0.220 Ω VDS=-5V,ID=-2.8V 6.5 S IS=-1.6A,VGS=0V -0.8 -1.2 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Turn-On Time td(on) Turn-Off Time VDS=-6V VGS=-4.5V ID≣-2.8A VDS=-6V VGS=0V F=1MHz Crss VDD=-6V RL=6Ω ID=-1A VGEN=-4.5V RG=6Ω tr td(off) tf 4.8 8 0.75 nC 1.4 35 150 pF 60 10 20 32 45 38 55 30 50 nS 3 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2301M 2007. V1 ST2301M P Channel Enhancement Mode MOSFET -3.0A TYPICAL CHARACTERICTICS (25℃ Unless noted) 4 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2301M 2007. V1 ST2301M P Channel Enhancement Mode MOSFET -3.0A TYPICAL CHARACTERICTICS (25℃ Unless noted) 5 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2301M 2007. V1 ST2301M P Channel Enhancement Mode MOSFET -3.0A TYPICAL CHARACTERICTICS (25℃ Unless noted) 6 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2301M 2007. V1 ST2301M P Channel Enhancement Mode MOSFET -3.0A SOT-23 PACKAGE OUTLINE 7 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2301M 2007. V1