ST2302M N Channel Enhancement Mode MOSFET 3.6A DESCRIPTION The ST2302M is the N-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outine surface mount package. FEATURE PIN CONFIGURATION SOT-23 z 3 z D z G S z 1 2 z 1.Gate 2.Source 20V/3.6A, RDS(ON) = 90m-ohm (Typ.) @VGS = 4.5V 20V/3.1A, RDS(ON) = 130m-ohm @VGS = 2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design 3.Drain PART MARKING SOT-23 3 S02YA 1 Y: Year Code 2 A: Process Code ORDERING INFORMATION Part Number Package Part Marking ST2302MSRG SOT-23 S02YA ※ Process Code : A ~ Z ; a ~ z ※ ST2302MSRG S : SOT-23 ; R : Tape Reel ; G : Pb – Free 1 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2302M 2007. V1 ST2302M N Channel Enhancement Mode MOSFET 3.6A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±12 V ID 3.2 2.6 A IDM 10 A Continuous Source Current (Diode Conduction) IS 1.6 A TA=25℃ TA=70℃ PD 1.25 0.8 W TJ 150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 100 Continuous Drain CurrentTJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Power Dissipation Operation Junction Temperature ℃/W 2 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2302M 2007. V1 ST2302M N Channel Enhancement Mode MOSFET 3.6A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ V(BR)DSS VGS=0V,ID=250uA 20 VGS(th) VDS=VGS,ID=250uA 0.5 IGSS Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) Drain-source On-Resistance RDS(on) Forward Transconductance gfs Diode Forward Voltage VSD V 1.2 V VDS=0V,VGS=±12V ±100 nA VDS=20V,VGS=0V 1 VDS=20V,VGS=0V TJ=55℃ 10 VDS≧5V,VGS=4.5V VDS≧5V,VGS=2.5V VGS=4.5V,ID=3.6A VGS=2.5V,ID=3.1A 6 4 uA A 0.09 0.13 Ω VDS=5V,ID=3.6V 10 S IS=1.6A,VGS=0V 0.85 1.2 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Turn-On Time td(on) Turn-Off Time VDS=10V VGS=4.5V ID≣3.6A VDS=10V VGS=0V F=1MHz Crss VDD=10V RL=5.5Ω ID=3.6A VGEN=4.5V RG=6Ω tr td(off) tf 5.4 10 0.65 nC 1.4 340 115 pF 33 12 25 36 60 34 60 10 25 3 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2302M 2007. V1 nS ST2302M N Channel Enhancement Mode MOSFET 3.6A TYPICAL CHARACTERICTICS (25℃ Unless noted) 4 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2302M 2007. V1 ST2302M N Channel Enhancement Mode MOSFET 3.6A TYPICAL CHARACTERICTICS (25℃ Unless noted) 5 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2302M 2007. V1 ST2302M N Channel Enhancement Mode MOSFET 3.6A SOT-23 PACKAGE OUTLINE 6 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2302M 2007. V1