AM7321P Analog Power P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 14 @ VGS = -4.5V -20 19 @ VGS = -2.5V ID (A) -13 -12 DFN3x3-8PP Top View S • • • • Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe DFN3x3-8PP saves board space Fast switching speed High performance trench technology S 1 8 D S 2 D S G 3 4 7 6 5 G D D D P-Channel MOSFET o ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Maximum Units VDS Drain-Source Voltage -20 V ±8 Gate-Source Voltage VGS o TA=25 C a Continuous Drain Current o -13 ID TA=70 C b Pulsed Drain Current Continuous Source Current (Diode Conduction) a IDM ±50 IS -2.1 o TA=25 C a Power Dissipation o THERMAL RESISTANCE RATINGS Parameter a MaximumJunction-to-Ambient Steady State W 2.0 o TJ, Tstg -55 to 150 Symbol t <= 10 sec A 3.5 PD TA=70 C Operating Junction and Storage Temperature Range A -11 RθJA C Maximum Units o 35 C/W 81 o C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS-AM7321_B AM7321P Analog Power SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions VGS(th) VDS = VGS, ID = -250 uA Limits Unit Min Typ Max Static Gate-Threshold Voltage IGSS Gate-Body Leakage Zero Gate Voltage Drain Current A On-State Drain Current A Drain-Source On-Resistance Forward Tranconductance A Diode Forward Voltage IDSS -1 V VDS = 0 V, VGS = ±8 V ±100 VDS = -16 V, VGS = 0 V -1 VDS = -16 V, VGS = 0 V, TJ = 55oC -5 nA uA ID(on) VDS = -5 V, VGS = -10 V rDS(on) VGS = -4.5 V, ID = -11.5 A VGS = -2.5 V, ID = -9.3 A gfs VDS = -15 V, ID = -11.5 A 29 S VSD IS = 2.5 A, VGS = 0 V -0.8 V -50 A 14 19 mΩ b Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss td(on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time tr td(off) 25 VDS = -15 V, VGS = -4.5 V, ID = -11.5 A 11 17 2300 VDS=-15V, VGS=0V, f=1MHz 600 pF 300 15 VDD = -15 V, RL = 6 Ω , ID = -1 A, VGEN = -10 V tf 13 100 54 Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. 2 PRELIMINARY nC Publication Order Number: DS-AM7321_B nS AM7321P Analog Power Typical Electrical Characteristics (P-Channel) 0.03 -5 0 4 V t hru 1 0 v -4 0 0.026 (Ω) 3 .5 V -3 0 0.022 Vgs = 4.5V 0.018 -2 0 Vgs = 10V R 3V 0.014 -1 0 2 .5 V 0.01 0 0 -1 -2 0 -3 -4 Normalized RDS (on) -16 -20 0 .05 VGS =10V ID =11.5A 0 .04 (Ω) 1.4 1.3 -12 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage Figure 1. On-Region Characteristics 1.6 1.5 -8 I D - Drain Current (A) VDS - Dra in to S o urc e Vo lta ge (V) 1.2 1.1 1.0 0 .03 ID = 1 1.5 a 0 .02 R 0.9 0.8 0 .01 0.7 0.6 0 -50 -25 0 25 50 75 0 2 Forward 4 6 8 10 Figure 6. Body Diode Voltage Variation 100 125 150 GS - Gate Source Voltage with Source V Current and to Temperature T J - Juncation T emperature (ºC) (V) Figure 4. On-Resistance with Gate to Source Voltage Figure 3. On-Resistance Variation with Temperature -50 100 10 I - Drain Current (A) IS - Source Current (A) 25C TJ = 150°C TJ = 25°C 1 -40 125C -55C -30 -20 -10 0 0 0.1 0 0.2 0.4 0.6 0.8 1 1.2 -1 -2 -3 -4 -5 VGS - Gate to Source Voltage (V) VSD - Source to Drain Current (V) Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature 3 PRELIMINARY Publication Order Number: DS-AM7321_B AM7321P Analog Power Typical Electrical Characteristics (P-Channel) 4 00 0 Vgs Gate-Source Voltage ( V ) -5 ID=11.5a Capacit ance (pF) -4 -3 -2 -1 CISS 3 00 0 2 00 0 CRSS 0 0 0 8 16 24 32 40 0 -5 -1 0 -2 0 Figure 8. Capacitance Characteristics 50 45 40 0.8 0.6 35 30 25 20 15 0.4 Power (W) Variance (V) -1 5 VDS (V) Q g, Charge (nC) Figure 7. Gate Charge Characteristics 0.2 0 V COSS 1 00 0 -0.2 10 5 0 0.01 -0.4 -50 -25 0 25 50 75 100 125 150 T J - Juncation T emperature (ºC) 0.1 1 10 100 1000 Pulse T ime (S) Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation Normalized Thermal Transient Junction to Ambient 1 0.5 0.2 0.2 P DM 0.1 0.1 t1 t2 0.05 0.02 1. Duty Cycal D = t1/t2 2. Per Unit Bas e RθJ A =70C/W 3. TJ M - T A = PDM Z θjc 4. Sureface Mounted Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (S) Figure 11. Transient Thermal Response Curve 4 PRELIMINARY Publication Order Number: DS-AM7321_B AM7321P Analog Power Package Information 5 PRELIMINARY Publication Order Number: DS-AM7321_B