AOSMD AON5802

AON5802
Common-Drain Dual N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AON5800 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is
ESD protected. This device is suitable for use as a uni-directional
or bi-directional load switch, facilitated by its common-drain
configuration. Standard Product AON5802 is Pb-free (meets
ROHS & Sony 259 specifications). AON5802L is a Green Product
ordering option. AON5802 and AON5802L are electrically
identical.
Features
VDS (V) = 30V
ID = 8 A (VGS = 10V)
RDS(ON) < 17 mΩ (VGS = 10V)
RDS(ON) < 20 mΩ (VGS = 4.5V)
RDS(ON) < 22 mΩ (VGS = 4.0V)
RDS(ON) < 24 mΩ (VGS = 3.1V)
RDS(ON) < 30 mΩ (VGS = 2.5V)
ESD Rating: 2000V HBM
S2
D
G2
S1
G1
Top View
Bottom View
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain
.
Current RθJA=75°C/W TA=70°C
C
Pulsed Drain Current
Power Dissipation
RθJA=75°C/W
A
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
B
Maximum Junction-to-Lead
Alpha & Omega Semiconductor, Ltd.
45
W
1.0
TJ, TSTG
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
A
1.7
PDSM
Junction and Storage Temperature Range
V
±12
6
IDM
TA=70°C
Units
8
ID
TA=25°C
Maximum
30
RθJA
RθJC
Typ
30
61
4.5
°C
Max
40
75
6
Units
°C/W
°C/W
°C/W
AON5802
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Min
Conditions
ID=250µA, VGS=0V
IGSS
Gate-Body leakage current
BVGSO
Gate-Source Breakdown Voltage
VDS=0V, IG=±250uA
±12
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250µA
0.6
ID(ON)
On state drain current
VGS=10V, VDS=5V
30
TJ=55°C
5
TJ=125°C
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
14
17
V
A
20
VGS=4.0V, ID=4A
18
22
VGS=3.1V, ID=4A
20
24
VGS=2.5V, ID=3A
23
30
VDS=5V, ID=8A
37
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
V
28
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
Output Capacitance
1.5
17
VSD
Coss
1
23
Forward Transconductance
IS
µA
VGS=4.5V, ID=6A
gFS
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS=15V, ID=8A
0.5
µA
10
VDS=0V, VGS=±10V
VGS=10V, ID=8A
Units
V
1
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
30
VDS=24V, VGS=0V
IDSS
RDS(ON)
Typ
0.76
mΩ
S
0.9
V
4.5
A
869
pF
129
pF
104
pF
1.5
Ω
10.7
nC
2.1
nC
nC
Qgd
Gate Drain Charge
4.3
tD(on)
Turn-On DelayTime
3.4
ns
tr
Turn-On Rise Time
11.2
ns
27.2
ns
6.7
ns
ns
nC
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=10V, VDS=15V, RL=1.25Ω,
RGEN=3Ω
trr
Body Diode Reverse Recovery Time
IF=8A, dI/dt=100A/µs
24.6
Qrr
Body Diode Reverse Recovery Charge IF=8A, dI/dt=100A/µs
12.9
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev2: June 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AON5802
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
20
10V
2.5V
3V
25
15
4V
ID(A)
20
ID (A)
VDS=5V
15
10
VGS=2V
10
125°C
5
5
25°C
0
0
0
1
2
3
4
0
5
0.5
40
VGS=2.5V
Normalized On-Resistance
RDS(ON) (mΩ)
1.5
2
2.5
1.8
30
VGS=4.5V
20
VGS=10V
10
0
0
5
10
15
20
1.6
VGS=10V
ID=8A
VGS=4.5V
ID=6A
1.4
VGS=2.5V
ID=3A
1.2
1
0.8
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
60
1.0E+01
ID=8A
50
1.0E+00
40
1.0E-01
IS (A)
RDS(ON) (mΩ)
1
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
125°C
30
125°C
25°C
1.0E-02
1.0E-03
20
25°C
10
1.0E-04
1.0E-05
0
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
AON5802
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1600
VDS=15V
ID=8A
9
8
1400
Capacitance (pF)
7
VGS (Volts)
6
5
4
3
1000
800
600
2
400
1
200
0
0
4
8
12
16
20
Coss
Crss
0
24
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
100.0
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
200
10µs
ID (Amps)
100µs
1ms
1.0
10ms
100ms
1s
10s
DC
TJ(Max)=150°C, TA=25°C
0.1
0.1
1
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJA
RθJA=75°C/W
120
80
40
0
0.0001
100
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note E)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
TJ(Max)=150°C
TA=25°C
160
Power (W)
RDS(ON)
limited
10.0
ZθJC Normalized Transient
Thermal Resistance
Ciss
1200
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
Ton
0.01
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Alpha & Omega Semiconductor, Ltd.
100
1000