AOSMD AOL1426

AOL1426
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOL1426 uses advanced trench technology to
provide excellent RDS(ON), low gate charge.This device
is suitable for use as a high side switch in SMPS and
general purpose applications. Standard Product
AOL1426 is Pb-free (meets ROHS & Sony 259
specifications). AOL1426L is a Green Product
ordering option. AOL1426 and AOL1426L are
electrically identical.
Ultra SO-8TM Top View
VDS (V) = 30V
ID = 46A (VGS = 10V)
RDS(ON) <10.5mΩ (VGS = 10V)
RDS(ON) < 12.5mΩ (VGS = 4.5V)
Fits SOIC8
footprint !
D
D
S
Bottom tab
connected to
drain
G
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
Current B
TC=25°C
ID
IDM
Pulsed Drain Current
C
TC=25°C
A
TC=100°C
Junction and Storage Temperature Range
35
A
EAR
184
mJ
8
43
W
21
2.0
W
1
TJ, TSTG
-55 to 175
Symbol
t ≤ 10s
Steady-State
Steady-State
Alpha & Omega Semiconductor, Ltd.
A
IDSM
IAR
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
A
Maximum Junction-to-Ambient
C
Maximum Junction-to-Case
A
120
PD
TA=25°C
Power Dissipation
V
10
Avalanche Current C
Power Dissipation B
±12
33
TA=25°C
TA=70°C
Repetitive avalanche energy L=0.3mH
Units
V
46
TC=100°C
Continuous Drain
Current H
Maximum
30
RθJA
RθJC
Typ
24
53
2.4
°C
Max
30
64
3.5
Units
°C/W
°C/W
°C/W
AOL1426
Electrical Characteristics (T J=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±12V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=10V, VDS=5V
120
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=20A
TJ=125°C
VGS=4.5V, ID=20A
Forward Transconductance
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
VDS=5V, ID=20A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
V
TJ=55°C
VSD
Units
1
Zero Gate Voltage Drain Current
gFS
Max
30
VDS=24V, VGS=0V
IDSS
IS
Typ
5
1.55
VGS=0V, VDS=0V, f=1MHz
0.1
µA
2.5
V
A
8.5
10.5
14.5
18
10.2
12.5
40
0.73
1210
VGS=0V, VDS=15V, f=1MHz
uA
mΩ
mΩ
S
1.0
V
46
A
1452
pF
330
pF
85
pF
1.2
1.6
Ω
22
28
nC
10
nC
3.7
nC
Gate Drain Charge
2.7
nC
Turn-On DelayTime
10
ns
Qgs
Gate Source Charge
Qgd
tD(on)
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=10V, VDS=15V, ID=20A
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
6.3
ns
21
ns
2.8
ns
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=100A/µs
36
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
47
45
ns
nC
A: The value of RθJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assumin
a maximum junction temperature of TJ(MAX)=175°C.
G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
H. Surface mounted on a 1 in 2 FR-4 board with 2oz. Copper.
Rev0: Mar 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOL1424
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
30
6V
20
60
ID(A)
4.5V
ID (A)
VDS=5V
25
10V
90
VGS=3.5V
125°
15
25°C
10
30
5
0
0
0
1
2
3
4
5
1
1.5
VDS (Volts)
Fig 1: On-Region Characteristics
2.5
3
3.5
4
VGS(Volts)
Figure 2: Transfer Characteristics
13
Normalized On-Resistance
2
11
RDS(ON) (mΩ)
2
VGS=4.5V
9
VGS=10V
7
5
VGS=10V
1.8
ID=20A
1.6
VGS=4.5
1.4
1.2
1
0.8
0.6
0
5
10
15
20
25
30
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
30
60
90
120
150
180
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+02
20
1.0E+01
125°C
1.0E+00
15
IS (A)
RDS(ON) (mΩ)
ID=20A
125°C
10
25°C
1.0E-01
1.0E-02
1.0E-03
25°C
1.0E-04
1.0E-05
5
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
AOL1426
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2000
10
Capacitance (pF)
VGS (Volts)
8
VDS=15V
ID=20A
6
4
1500
Ciss
1000
2
500
0
0
Coss
Crss
0
5
10
15
20
25
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
15
20
25
30
VDS (Volts)
Figure 8: Capacitance Characteristics
1000.0
140
10µs
100µ
RDS(ON)
limited
10.0
1m
1.0
DC
10ms
0.1
TJ(Max)=175°C
TC=25°C
0.1
0.0
0.01
0.1
120
Power (W)
100.0
ID (Amps)
5
TJ(Max)=175°C
TC=25°C
100
80
60
40
1
VDS (Volts)
10
100
20
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
ZθJA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJc .RθJc
RθJC=3.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
10
100
AOL1426
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
TA=25°C
Power Dissipation (W)
ID(A), Peak Avalanche Current
60
40
20
40
30
20
10
0
0
0.00001
0.0001
0.001
0
0.01
25
50
75
100
125
150
175
T CASE (°C)
Figure 13: Power De-rating (Note B)
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
60
140
100
40
Power (W)
Current rating ID(A)
120
20
80
60
40
20
0
0
25
50
75
100
125
150
0
0.001
175
T CASE (°C)
Figure 14: Current De-rating (Note B)
ZθJA Normalized Transient
Thermal Resistance
10
1
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note G)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=64°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
Alpha & Omega Semiconductor, Ltd.
100
1000