AOL1426 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1426 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. Standard Product AOL1426 is Pb-free (meets ROHS & Sony 259 specifications). AOL1426L is a Green Product ordering option. AOL1426 and AOL1426L are electrically identical. Ultra SO-8TM Top View VDS (V) = 30V ID = 46A (VGS = 10V) RDS(ON) <10.5mΩ (VGS = 10V) RDS(ON) < 12.5mΩ (VGS = 4.5V) Fits SOIC8 footprint ! D D S Bottom tab connected to drain G S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B TC=25°C ID IDM Pulsed Drain Current C TC=25°C A TC=100°C Junction and Storage Temperature Range 35 A EAR 184 mJ 8 43 W 21 2.0 W 1 TJ, TSTG -55 to 175 Symbol t ≤ 10s Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. A IDSM IAR PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Case A 120 PD TA=25°C Power Dissipation V 10 Avalanche Current C Power Dissipation B ±12 33 TA=25°C TA=70°C Repetitive avalanche energy L=0.3mH Units V 46 TC=100°C Continuous Drain Current H Maximum 30 RθJA RθJC Typ 24 53 2.4 °C Max 30 64 3.5 Units °C/W °C/W °C/W AOL1426 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 120 RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A Forward Transconductance Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current VDS=5V, ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge V TJ=55°C VSD Units 1 Zero Gate Voltage Drain Current gFS Max 30 VDS=24V, VGS=0V IDSS IS Typ 5 1.55 VGS=0V, VDS=0V, f=1MHz 0.1 µA 2.5 V A 8.5 10.5 14.5 18 10.2 12.5 40 0.73 1210 VGS=0V, VDS=15V, f=1MHz uA mΩ mΩ S 1.0 V 46 A 1452 pF 330 pF 85 pF 1.2 1.6 Ω 22 28 nC 10 nC 3.7 nC Gate Drain Charge 2.7 nC Turn-On DelayTime 10 ns Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=10V, VDS=15V, ID=20A VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 6.3 ns 21 ns 2.8 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs 36 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 47 45 ns nC A: The value of RθJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assumin a maximum junction temperature of TJ(MAX)=175°C. G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. H. Surface mounted on a 1 in 2 FR-4 board with 2oz. Copper. Rev0: Mar 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOL1424 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 30 6V 20 60 ID(A) 4.5V ID (A) VDS=5V 25 10V 90 VGS=3.5V 125° 15 25°C 10 30 5 0 0 0 1 2 3 4 5 1 1.5 VDS (Volts) Fig 1: On-Region Characteristics 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 13 Normalized On-Resistance 2 11 RDS(ON) (mΩ) 2 VGS=4.5V 9 VGS=10V 7 5 VGS=10V 1.8 ID=20A 1.6 VGS=4.5 1.4 1.2 1 0.8 0.6 0 5 10 15 20 25 30 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 30 60 90 120 150 180 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 20 1.0E+01 125°C 1.0E+00 15 IS (A) RDS(ON) (mΩ) ID=20A 125°C 10 25°C 1.0E-01 1.0E-02 1.0E-03 25°C 1.0E-04 1.0E-05 5 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AOL1426 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2000 10 Capacitance (pF) VGS (Volts) 8 VDS=15V ID=20A 6 4 1500 Ciss 1000 2 500 0 0 Coss Crss 0 5 10 15 20 25 0 Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 140 10µs 100µ RDS(ON) limited 10.0 1m 1.0 DC 10ms 0.1 TJ(Max)=175°C TC=25°C 0.1 0.0 0.01 0.1 120 Power (W) 100.0 ID (Amps) 5 TJ(Max)=175°C TC=25°C 100 80 60 40 1 VDS (Volts) 10 100 20 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJc .RθJc RθJC=3.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 10 100 AOL1426 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 TA=25°C Power Dissipation (W) ID(A), Peak Avalanche Current 60 40 20 40 30 20 10 0 0 0.00001 0.0001 0.001 0 0.01 25 50 75 100 125 150 175 T CASE (°C) Figure 13: Power De-rating (Note B) Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 60 140 100 40 Power (W) Current rating ID(A) 120 20 80 60 40 20 0 0 25 50 75 100 125 150 0 0.001 175 T CASE (°C) Figure 14: Current De-rating (Note B) ZθJA Normalized Transient Thermal Resistance 10 1 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note G) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=64°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note G) Alpha & Omega Semiconductor, Ltd. 100 1000