AOSMD AOD4128

AOD4128
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD4128 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and low gate resistance.
This device is ideally suited for use as a low side switch in
CPU core power conversion. The device can also be used
in PWM, load switching and general purpose applications.
Standard Product AOD412 8 is Pb-free (meets ROHS &
Sony 259 specifications).
Features
VDS (V) = 25V
(VGS = 10V)
ID = 60 A
RDS(ON) < 4 mΩ (VGS = 10V)
RDS(ON) < 7 mΩ (VGS = 4.5V)
TO-252
D-PAK
D
Top View
Drain Connected to
Tab
G
S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
V
Drain-Source Voltage
DS
VGS
Gate-Source Voltage
Maximum
25
Units
V
±20
V
TC=25°C
Continuous Drain
CurrentG
60
TC=100°C
Pulsed Drain Current
60
ID
IDM
C
Avalanche Current C
IAR
45
Repetitive avalanche energy L=0.3mH C
EAR
304
TC=25°C
Power Dissipation
B
Power Dissipation
A
TA=25°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
Alpha & Omega Semiconductor, Ltd.
TJ, TSTG
Symbol
t ≤ 10s
Steady State
Steady State
W
37
2.0
PDSM
TA=70°C
mJ
75
PD
TC=100°C
A
165
RθJA
RθJC
W
1.3
-55 to 175
Typ
18
50
1
Max
25
60
2
°C
Units
°C/W
°C/W
°C/W
www.aosmd.com
AOD4128
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250uA, VGS=0V
1
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250µA
1.3
ID(ON)
On state drain current
VGS=10V, VDS=5V
165
TJ=55°C
6
VGS=4.5V, ID=20A
5.8
7
VDS=5V, ID=20A
55
Forward Transconductance
VSD
IS=1A, VGS=0V
Diode Forward Voltage
G
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=0V, VDS=12.5V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=12.5V, ID=20A
VGS=10V, VDS=12.5V,
RL=0.63Ω, RGEN=3Ω
V
A
5.0
TJ=125°C
nA
2.5
4
gFS
Output Capacitance
1.6
3.4
Static Drain-Source On-Resistance
uA
5
100
VGS=10V, ID=20A
RDS(ON)
Units
V
VDS=25V, VGS=0V
Zero Gate Voltage Drain Current
Coss
Max
25
IDSS
IS
Typ
0.7
mΩ
mΩ
S
1
V
60
A
3578
4300
pF
731
950
pF
438
615
pF
2.5
4
Ω
61.8
80
nC
29.8
39
nC
8.5
nC
12.9
nC
11.6
ns
17.7
ns
45
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=100A/µs
39
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
32
20
ns
48
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Re0: June. 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4128
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
165
60
150
4.5V
10V
VDS=5V
50
135
120
5V
40
4V
90
75
ID(A)
ID(A)
105
3.5V
60
20
45
VGS=3V
30
0
0
25°C
10
15
1
2
3
4
VDS (Volts)
Figure 1: On-Region Characteristics
-40°C
0
5
0
8.0
1
2
3
VGS(Volts)
Figure 2: Transfer Characteristics
4
1.8
ID=20A
Normalized On-Resistance
7.0
RDS(ON) (mΩ)
125°C
30
VGS=4.5V
6.0
5.0
4.0
VGS=10V
3.0
VGS=10V
1.6
1.4
VGS=4.5V
1.2
1
2.0
0
5
10
15
20
25
0.8
30
-50
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
12
1.0E+02
ID=20A
10
1.0E+01
125°C
1.0E+00
8
IS (A)
RDS(ON) (mΩ)
0
TC=100°C
=25°C
TA25°C
6
125°C
1.0E-01
25°C
1.0E-02
1.0E-03
-40°C
-55 to 175
4
1.0E-04
-40°C
1.0E-05
2
2
4
6
8
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
10
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
www.aosmd.com
AOD4128
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5000
10
Ciss
4000
Capacitance (pF)
VGS (Volts)
4500
VDS=12.5V
ID=20A
8
6
4
2
3500
3000
2500
2000
Coss
1500
1000
500
0
0
10
20
30
40
50
60
Qg (nC)
Figure 7: Gate-Charge Characteristics
70
0
1000
5
10
15
20
VDS (Volts)
Figure 8: Capacitance Characteristics
25
500
RDS(ON)
limited
100
10us
100us
10
1ms
DC
10ms
1
TJ(Max)=175°C
Tc=25°C
400
Power (W)
ID (Amps)
Crss
0
TJ(Max)=175°C
TC=25°C
300
200
100
0.1
0
0.01
0.1
1
10
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
100
1E-05 0.0001 0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, single pulse
PD
0.1
Single Pulse
Ton
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4128
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
150
Power Dissipation (W)
ID(A), Peak Avalanche Current
200
TA=25°C
100
50
80
60
40
20
0
0
0.00001
0.0001
0
0.001
500
80
400
60
Power (W)
Current rating ID(A)
100
40
20
50
75
100
125
150
175
300
200
100
0
0
0
25
50
75
100
125
150
175
1E-05 1E-04 0.001 0.01
TCASE (°C)
Figure 14: Current De-rating (Note B)
10
ZθJA Normalized Transient
Thermal Resistance
25
TCASE (°C)
Figure 13: Power De-rating (Note B)
Time in avalanche, t A (s)
Figure 12: Single Pulse Avalanche capability
1
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
PD
0.001
Single Pulse
Ton
T
0.0001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com