AP2315GEN
Pb Free Plating Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Small Package Outline
▼ Surface Mount Device
BVDSS
-30V
RDS(ON)
1.25Ω
ID
- 840mA
S
G
SOT-23
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
, low on-resistance and cost-effectiveness.
D
G
The SOT-23 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
- 30
V
±16
V
3
-840
mA
3
-670
mA
Continuous Drain Current
Continuous Drain Current
1,2
IDM
Pulsed Drain Current
-2.5
A
PD@TA=25℃
Total Power Dissipation
1.38
W
Linear Derating Factor
0.01
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
90
℃/W
200721051-1/4
AP2315GEN
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
-30
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
-
-0.1
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=-10V, ID=-0.8A
-
-
1.25
Ω
VGS=-4.5V, ID=-0.5A
-
-
2.4
Ω
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-0.8A
-
880
-
mS
IDSS
Drain-Source Leakage Current (Tj=25oC)
VDS=-30V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=70 C)
VDS=-24V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=±16V
-
-
±30
uA
ID=-0.8A
-
1
1.6
nC
VGS(th)
o
IGSS
2
VGS=0V, ID=-250uA
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-25V
-
0.6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
0.4
-
nC
VDS=-15V
-
10
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-0.8A
-
8
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
22
-
ns
tf
Fall Time
RD=18.8Ω
-
17
-
ns
Ciss
Input Capacitance
VGS=0V
-
30
50
pF
Coss
Output Capacitance
VDS=-25V
-
15
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
10
-
pF
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=-1.1A, VGS=0V
-
-
-1.3
V
trr
Reverse Recovery Time
IS=-0.8A, VGS=0V,
-
27
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
30
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
2/4
AP2315GEN
2.0
2.0
-10V
-7.0V
1.5
1.5
-5.0V
1.0
-4.5V
0.5
V G = -3.0V
0.0
-7.0V
65mΩ
1.0
-5.0V
-4.5V
0.5
V G = -3.0V
0.0
0
2
4
6
8
0
4
6
8
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
I D = -0.8A
V GS = -10V
I D = -0.5A
o
T A =25 C
3.5
1.4
Normalized RDS(ON)
RDS(ON) (mΩ )
2
-V DS , Drain-to-Source Voltage (V)
4.5
2.5
1.5
0.5
1.0
0.6
2
4
6
8
10
-50
-V GS , Gate-to-Source Voltage (V)
0
50
100
150
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
Normalized -VGS(th) (V)
0.8
0.6
T j =150 o C
-IS(A)
-10V
TA=150oC
-ID , Drain Current (A)
-ID , Drain Current (A)
T A =25 o C
T j =25 o C
0.4
1.1
0.8
0.2
0.5
0.0
0
0.3
0.6
0.9
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.5
-50
0
50
T j , Junction Temperature (
100
o
150
C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP2315GEN
f=1.0MHz
100
I D = -0.8A
V DS = -25V
9
65mΩ
C (pF)
-VGS , Gate to Source Voltage (V)
12
6
C iss
3
C oss
C rss
0
10
0
1
2
3
1
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthja)
10
1ms
-ID (A)
1
10ms
100ms
0.1
T A =25 o C
Single Pulse
1s
DC
Duty factor=0.5
0.2
0.1
PDM
0.1
t
T
0.05
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
0.02
Rthja = 270 ℃ /W
0.01
Single pulse
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
1.0
VG
-ID , Drain Current (A)
V DS =-5V
0.8
T j =25 o C
QG
T j =150 o C
-4.5V
0.6
QGS
QGD
0.4
0.2
Charge
Q
0.0
0
2
4
6
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4