AP2422GY
Pb Free Plating Product
Advanced Power
Electronics Corp.
▼ Capable of 2.5V gate drive
▼ Lower on-resistance
▼ Surface mount package
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D2
D2
D1
D1
▼ RoHS compliant
2928-8
G2
S2
G1
S1
BVDSS
30V
RDS(ON)
40mΩ
ID
4.8A
Description
D2
D1
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
G1
The 2928-8 J-lead package provides good on-resistance
performance and space saving like TSOP-6.
G2
S2
S1
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
30
V
±12
V
3
4.8
A
3
3.8
A
20
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
1.39
W
Linear Derating Factor
0.01
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
90
℃/W
200816053-1/4
AP2422GY
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
30
-
-
V
-
0.02
-
V/℃
VGS=10V, ID=5A
-
-
32
mΩ
VGS=4.5V, ID=4A
-
-
40
mΩ
VGS=2.5V, ID=2A
-
-
60
mΩ
0.5
-
1.2
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
2
VDS=VGS, ID=250uA
VDS=5V, ID=4A
-
9
-
S
o
VDS=30V, VGS=0V
-
-
1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=24V, VGS=0V
-
-
10
uA
Gate-Source Leakage
VGS=±12V
-
-
±100
nA
ID=4A
-
3
5
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
VGS=0V, ID=250uA
Max. Units
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=25V
-
1.3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4
-
nC
VDS=15V
-
10
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
11
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=5V
-
17
-
ns
tf
Fall Time
RD=15Ω
-
5
-
ns
Ciss
Input Capacitance
VGS=0V
-
480
770
pF
Coss
Output Capacitance
VDS=25V
-
90
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
70
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.5
2.3
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=1.1A, VGS=0V
-
-
1.3
V
trr
Reverse Recovery Time
IS=4A, VGS=0V,
-
18
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
10
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board , t <5sec ; 155℃/W at steady state.
2/4
AP2422GY
20
20
5.0 V
4.5 V
3.5 V
2.5 V
T A =25 C
ID , Drain Current (A)
16
5.0 V
4.5 V
3.5 V
o
T A = 150 C
16
ID , Drain Current (A)
o
12
8
4
12
2.5 V
8
V G = 1.5 V
4
V G = 1.5 V
0
0
0
1
2
3
0
4
V DS , Drain-to-Source Voltage (V)
1
2
3
4
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
80
1.8
ID=4A
V G = 4.5 V
Normalized RDS(ON)
ID=2A
T A =25 ℃
RDS(ON) (mΩ )
60
40
1.4
1.0
0.6
20
0
2
4
6
8
10
-50
V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.8
4
IS(A)
T j =150 o C
Normalized VGS(th) (V)
3
T j =25 o C
2
1.2
0.6
1
0.0
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP2422GY
f=1.0MHz
1000
15
C iss
12
V DS = 15 V
V DS = 20 V
V DS = 25 V
9
C (pF)
VGS , Gate to Source Voltage (V)
ID=4A
C oss
100
C rss
6
3
0
10
0
5
10
15
20
1
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (Rthja)
1
10
100us
ID (A)
9
V DS , Drain-to-Source Voltage (V)
1ms
1
10ms
0.1
100ms
1s
DC
T A =25 o C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
T
0.02
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
0.01
Rthja=155 oC/W
Single Pulse
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
15
VG
V DS =5V
12
ID , Drain Current (A)
QG
T j =25 o C
T j =150 o C
4.5V
9
QGS
QGD
6
3
Charge
Q
0
0
1
2
3
4
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4