ASI 2N5070

2N5070
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 2N5070 is Designed for High
PACKAGE STYLE TO- 60
Power Linear Amplifier Application in the
2.0 to 75 MHz Range.
FEATURES INCLUDE:
• Emitter Ballasted
• Common Emitter Package
MAXIMUM RATINGS
IC
3.3 A
10 A (PEAK)
VCE
30 V
PDISS
70 W @ TC = 25 C
TSTG
-65 C to +200 C
θJC
2.5 C/W
O
O
O
1 = EMITTER
3 = COLLECTOR
O
CHARACTERISTICS
O
TC = 25 C
SYMBOL
TEST CONDITIONS
BVCEO
IC = 200 mA
BVCER
IC = 200 mA
ICEO
VCE = 30 V
ICEV
VCE = 60 V
VCE = 60 V
ICBO
IEBO
hFE
2 = BASE
CASE = EMITTER
MINIMUM TYPICAL MAXIMUM
RBE = 5.0 Ω
UNITS
30
V
40
V
5.0
mA
10
10
mA
VCB = 60 V
10
mA
VEB = 4.0 V
10
mA
100
100
---
85
pF
VCE = 5.0 V
Cob
VCB = 30 V
ft
VCE = 15 V
Pin
η
IMD
VCE = 28 V
f1 = 30 MHz
VBE = -1.5 V
VBE = -1.5 V
O
TC = 150 C
10
10
IC = 1.0 A
IC = 3.0 A
f = 1.0 MHz
IC = 1.0 A
Pout = 25 W (PEP)
f2 = 30.001 MHz
f = 50 MHz
100
Zg = 50 Ω
40
MHz
1.25
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
-30
W
%
dB
REV. A
1/1