ASI MRF316

MRF316
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The MRF316 is Designed for Class C
Power Amplifier Applications up to 200
MHz.
PACKAGE STYLE .500 6L FLG
FEATURES:
C
A
E
C
E
2x ØN
FU LL R
• PG = 10 dB min. at 80 W/ 150 MHz
• Withstands 30:1 Load VSWR
• Omnigold™ Metalization System
D
E
E
E
.725/18,42
F
G
M
K
MAXIMUM RATINGS
H
20 A
IC
B
B
J
I
L
D IM
M IN IM U M
inche s / m m
inche s / m m
A
.150 / 3.43
M AX IM U M
.160 / 4.06
VCBO
65 V
B
C
.210 / 5.33
.220 / 5.59
VCEO
36 V
D
.835 / 21.21
.865 / 21.97
VEBO
4.0 V
PDISS
270 W @ TC = 25 C
E
.200 / 5.08
.210 / 5.33
F
.490 / 12.45
.510 / 12.95
G
.003 / 0.08
O
.725 / 18.42
I
O
-65 C to +200 C
.007 / 0.18
.125 / 3.18
H
O
TJ
.045 / 1.14
J
.970 / 24.64
.980 / 24.89
K
.090 / 2.29
.105 / 2.67
L
.150 / 3.81
.170 / 4.32
.285 / 7.24
M
O
O
TSTG
-65 C to +150 C
θJC
0.65 C/W
O
CHARACTERISTICS
.135 / 3.43
ORDER CODE: ASI10771
O
TC = 25 C
NONETEST CONDITIONS
SYMBOL
.120 / 3.05
N
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 100 mA
65
V
BVCES
IC = 100 mA
65
V
BVCEO
IC = 100 mA
35
BVEBO
IE = 10 mA
4.0
ICES
VCE = 30 V
hFE
VCE = 5.0 V
COB
VCB = 28 V
PG
ηC
Ψ
VCE = 28 V
IC = 5.0 A
V
20
f = 1.0 MHz
POUT = 80 W
f = 175 MHz
10.0
55
13.0
60
15
mA
200
---
250
pF
dB
%
30:1 minimum without degation in output power
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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