CED02N65D/CEU02N65D

CED02N65D/CEU02N65D
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
650V, 1.8A, RDS(ON) = 6.9 Ω @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
D
Lead free product is acquired.
TO-251 & TO-252 package.
G
D
G
S
CEU SERIES
TO-252(D-PAK)
ABSOLUTE MAXIMUM RATINGS
Parameter
G
D
S
CED SERIES
TO-251(I-PAK)
Tc = 25 C unless otherwise noted
Symbol
Limit
650
Units
V
VGS
±30
V
ID
1.8
A
IDM
7.2
A
35
W
0.29
W/ C
Drain-Source Voltage
VDS
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
a
Maximum Power Dissipation @ TC = 25 C
PD
- Derate above 25 C
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
C
IAS
1.4
A
TJ,Tstg
-55 to 150
C
Avalanche Current
Operating and Store Temperature Range
S
Thermal Characteristics
Symbol
Limit
Units
Thermal Resistance, Junction-to-Case
Parameter
RθJC
3.5
C/W
Thermal Resistance, Junction-to-Ambient
RθJA
50
C/W
2009.July
http://www.cetsemi.com
6-1
CED02N65D/CEU02N65D
Electrical Characteristics
Parameter
Tc = 25 C unless otherwise noted
Symbol
Test Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
650
Zero Gate Voltage Drain Current
IDSS
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
Typ
Max
Units
VDS = 650V, VGS = 0V
1
µA
IGSSF
VGS = 30V, VDS = 0V
100
nA
IGSSR
VGS = -30V, VDS = 0V
-100
nA
4.5
V
6.9
Ω
Off Characteristics
V
On Characteristics b
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics
VGS(th)
VGS = VDS, ID = 250µA
2.5
RDS(on)
VGS = 10V, ID = 0.8A
5.6
gFS
VDS = 10V, ID = 0.6A
0.8
S
270
pF
55
pF
25
pF
c
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Switching Characteristics c
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
VDD = 300V, ID = 1.3A,
VGS = 10V, RGEN = 4.7Ω
11
14.3
ns
10
13
ns
27
35.1
ns
Turn-Off Fall Time
tf
7.5
9.75
ns
Total Gate Charge
Qg
15.5
20.1
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS = 480V, ID = 1.3A,
VGS = 10V
1
nC
10
nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
IS
Drain-Source Diode Forward Voltage b
VSD
VGS = 0V, IS = 0.6A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.L = 100mH, IAS = 1.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C
6-2
6
A
1.5
V
6
CED02N65D/CEU02N65D
0.5
1.5
25 C
VGS=6V
0.9
0.6
0.3
VGS=5V
0
5
10
20
1
2
3
4
5
6
7
Figure 2. Transfer Characteristics
Ciss
100
Coss
50
Crss
0
5
10
15
20
25
2.2
1.9
ID=0.8A
VGS=10V
1.6
1.3
1.0
0.7
0.4
-100
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
VDS=VGS
ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50
-55 C
Figure 1. Output Characteristics
150
1.2
0.1
VGS, Gate-to-Source Voltage (V)
200
1.3
0.2
0.0
25
250
0
0.3
VDS, Drain-to-Source Voltage (V)
300
C, Capacitance (pF)
15
0.4
TJ=125 C
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
0.0
VTH, Normalized
Gate-Source Threshold Voltage
ID, Drain Current (A)
1.2
IS, Source-drain current (A)
ID, Drain Current (A)
VGS=10,9,8V
-25
0
25
50
75
100
125
10
1
10
0
10
-1
VGS=0V
0.4
150
0.6
0.8
1.0
1.2
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
6-3
10
10
VDS=480V
ID=1.3A
8
6
4
2
0
0
1
RDS(ON)Limit
ID, Drain Current (A)
VGS, Gate to Source Voltage (V)
CED02N65D/CEU02N65D
5
10
15
20
10
0
10
-1
10
-2
10
-3
1ms
10ms
100ms
1s
DC
6
TA=25 C
TJ=150 C
Single Pulse
10
0
10
1
10
2
10
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
t on
V IN
RL
D
VGS
RGEN
toff
tr
td(on)
td(off)
tf
90%
90%
VOUT
VOUT
10%
INVERTED
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 10. Switching Waveforms
r(t),Normalized Effective
Transient Thermal Impedance
Figure 9. Switching Test Circuit
10
0
D=0.5
0.2
0.1
10
-1
PDM
0.05
t1
0.02
0.01
10
Single Pulse
-2
10
-5
t2
1. RθJC (t)=r (t) * RθJC
2. RθJC=See Datasheet
3. TJM-TC = P* RθJC (t)
4. Duty Cycle, D=t1/t2
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
6-4
10
0
10
1
3