CHENMKO ENTERPRISE CO.,LTD CHT5338ZPT SURFACE MOUNT NPN Silicon Transistor VOLTAGE 100 Volts CURRENT 5 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. FEATURE SC-73/SOT-223 * Small flat package. ( SC-73/SOT-223 ) * Suitable for high packing density. 1.65+0.15 * High saturation current capability. 6.50+0.20 0.90+0.05 3.5+0.2 * Voltage controlled small signal switch. 7.0+0.3 3.00+0.10 CONSTRUCTION 0.70+0.10 0.70+0.10 2.30+0.1 MARKING 0.9+0.2 2.0+0.3 * NPN Silicon Power Transistor 2.0+0.3 0.27+0.05 0.01~0.10 0.70+0.10 4.60+0.1 ZLN 1 1 Base CIRCUIT 3 2 2 Emitter 3 3 Collector ( Heat Sink ) 1 2 SC-73/SOT-223 Dimensions in millimeters LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 100 V VCEO collector-emitter voltage open base − 100 V VEBO emitter-base voltage open collector − 6.0 V IC collector current DC − 5.0 A IB base current − 1.0 A Ptot total power dissipation − 2.0 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tamb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-7 RATING CHARACTERISTIC CURVES ( CHZ5338ZPT ) THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 VALUE UNIT 500 K/W Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = 100V − 10 nA IEBO emitter cut-off current IC = 0; VEB = 6 V − 100 nA hFE DC current gain VCE = 2 V; note 1 VCEsat VBEsat IC = 500mA 30 − IC = 2.0 A 30 IC = 5.0 A 20 120 − collector-emitter saturation voltage IC = 2.0 A; IB = 2 0 0 mA − IC = 5.0 A; IB = 5 0 0 mA − base-emitter saturation voltage IC = 2.0 A; IB = 2 0 0 mA − IC = 5.0 A; IB = 5 0 0 mA Cc collector capacitance IE = ie = 0; VCB = 1 0 V; f = 1 MHz Ce emitter capacitance IC = ic = 0; VBE = 2V; f = 1 MHz fT transition frequency IC = 500 mA; VCE = 10 V; f = 10 MHz 0.7 1.2 V V − − 1.2 1.8 250 pF − 1000 pF V V 30 − − 100 ns − 100 ns − 2.0 ns − 200 ns MHz Switching times (between 10% and 90% levels); td delay time tr rise time ts storage time tf fall time VCC=40V,VBE=3.0V,IC=2.0A, IB1=200mA Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. VCC=40V,IC=2.0A,IB1=IB2=200mA