CHENMKO CHT807PT

CHENMKO ENTERPRISE CO.,LTD
CHT807PT
SURFACE MOUNT
PNP Muti-Chip General Purpose Amplifier
VOLTAGE 45 Volts
CURRENT 0.5 Ampere
APPLICATION
* AF input stages and driver applicationon equipment.
* Other general purpose applications.
FEATURE
(3)
(2)
.055 (1.40)
.047 (1.20)
(3)C
.103 (2.64)
.086 (2.20)
.028 (0.70)
.020 (0.50)
.007 (0.177)
* HFE(Q):J4
* HFE(R):J5
* HFE(S):J6
.045 (1.15)
.033 (0.85)
CIRCUIT
.002 (0.05)
MARKING
.066 (1.70)
.119 (3.04)
* PNP Silicon Transistor
* Epitaxial planner type
.110 (2.80)
.082 (2.10)
(1)
CONSTRUCTION
(1)B
.019 (0.50)
.041 (1.05)
.033 (0.85)
* Low colloector-emitter saturation.
* High saturation current capability.
.018 (0.30)
SOT-23
* Surface mount package. (SOT-23)
* High current gain.
* Suitable for high packing density.
SOT-23
Dimensions in inches and (millimeters)
(2)E
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
-45
V
VCEO
collector-emitter voltage
open base
−
-45
V
VCES
collector-base voltage
−
-50
V
VEBO
emitter-base voltage
−
−5
V
IC
collector current (DC)
−
-500
mA
ICM
peak collector current
−
-1000
mA
IBM
peak base current
mA
Ptot
total power dissipation
−
-200
310
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Note
1. Transistor mounted on an FR4 printed-circuit board.
open collector
Tamb ≤ 25 °C; note 1
2004-10
RATING CHARACTERISTIC ( CH807PT )
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
VALUE
UNIT
note 1
430
° C/W
thermal resistance from junction to ambient
Note
2
1. Device mounted on ceramic substrate 0.7mm ; 2.5cm ares.
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
ICBO
PARAMETER
collector-base cut-off current
CONDITIONS
MIN.
VCB = -20 V
−
VCB = -25 V; Tj = 150 OC
−
MAX.
-100
UNIT
nA
-50
uA
IEBO
emitter-base cut-off current
VEB = - 4 V
−
-100
nA
VCEsat
collector-emitter saturation volt
IC =- 500 mA ; I B = -50 mA
−
-700
mV
hFE
DC current gainI
IC = -100 mA; VCE= -1.0V
100
600
IC = -300 mA; VCE= -1.0V
60
−
VBE
base-emitter voltage
-1.2
IC = -300 mA; VCE= -1.0V
CCBO
collector-base capacitance
VCB = 10V ; f = 1 MHz
−
fT
transition frequency
IC = 10 mA; VCE = 5 V ;
f = 50 MHz
80
Note :
1. Pulse test: tp ≤ 300uSec; δ ≤ 0.02.
2. hFE: Classification Q: 100 to 250, R: 160 to 400, S: 250 to 600
V
12(typ.)
pF
−
MHz
RATING CHARACTERISTIC CURVES ( CH807PT )
Total power dissipation Ptot = f (TS )
Collector cutoff current ICBO = f (TA)
VCB = 25V
400
10
mW
V CBO
5
nA
10
4
P tot
300
250
10
max
3
200
10
150
typ
2
100
10
1
50
0
0
20
40
60
80
120 OC
100
10 0
150
0
50
oC
100
TS
150
TA
Permissible Pulse Load
Permissible Pulse Load R thJS = f (t p )
Ptotmax / PtotDC = f (t p )
10 3
10 3
Ptotmax / PtotDC
K/W
R thJS
10 2
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 2
10 1
10
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
0
10 -1
-6
10
10
-5
10
-4
10
-3
10
10 1
-2
s
tp
10
0
10 0
-6
10
10
-5
10
-4
10
-3
10
-2
s
tp
10
0
RATING CHARACTERISTIC CURVES ( CH807PT )
Collector-emitter saturation voltage
Base-emitter saturation voltage
IC = f (VCEsat ), h FE = 10
IC = f (VBEsat ), h FE = 10
10 3
ΙC
10 3
mA
ΙC
150 ooC
25 C
-50 oC
10 2
mA
10 2
5
5
10 1
10 1
5
5
10 0
10 0
5
5
10 -1
0
0.2
150 oC
25 oC
-50 oC
0.4
0.6
V
10 -1
0.8
0
2.0
1.0
3.0
DC current gain hFE = f (IC )
Transition frequency fT = f (IC)
VCE = 5V
VCE = 5V
4.0
10 3
10 3
h FE 5
V
V BEsat
VCEsat
fT
100 oC
25 oC
MHz
5
-50 oC
10
2
5
10 2
5
10 1
5
10 0
10 -1
10 0
10 1
10 2
mA 10 3
ΙC
10 1
10 0
10 1
3
10 2
mA
ΙC
10