CHENMKO ENTERPRISE CO.,LTD CHT807PT SURFACE MOUNT PNP Muti-Chip General Purpose Amplifier VOLTAGE 45 Volts CURRENT 0.5 Ampere APPLICATION * AF input stages and driver applicationon equipment. * Other general purpose applications. FEATURE (3) (2) .055 (1.40) .047 (1.20) (3)C .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .007 (0.177) * HFE(Q):J4 * HFE(R):J5 * HFE(S):J6 .045 (1.15) .033 (0.85) CIRCUIT .002 (0.05) MARKING .066 (1.70) .119 (3.04) * PNP Silicon Transistor * Epitaxial planner type .110 (2.80) .082 (2.10) (1) CONSTRUCTION (1)B .019 (0.50) .041 (1.05) .033 (0.85) * Low colloector-emitter saturation. * High saturation current capability. .018 (0.30) SOT-23 * Surface mount package. (SOT-23) * High current gain. * Suitable for high packing density. SOT-23 Dimensions in inches and (millimeters) (2)E LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − -45 V VCEO collector-emitter voltage open base − -45 V VCES collector-base voltage − -50 V VEBO emitter-base voltage − −5 V IC collector current (DC) − -500 mA ICM peak collector current − -1000 mA IBM peak base current mA Ptot total power dissipation − -200 310 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Note 1. Transistor mounted on an FR4 printed-circuit board. open collector Tamb ≤ 25 °C; note 1 2004-10 RATING CHARACTERISTIC ( CH807PT ) THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS VALUE UNIT note 1 430 ° C/W thermal resistance from junction to ambient Note 2 1. Device mounted on ceramic substrate 0.7mm ; 2.5cm ares. CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS MIN. VCB = -20 V − VCB = -25 V; Tj = 150 OC − MAX. -100 UNIT nA -50 uA IEBO emitter-base cut-off current VEB = - 4 V − -100 nA VCEsat collector-emitter saturation volt IC =- 500 mA ; I B = -50 mA − -700 mV hFE DC current gainI IC = -100 mA; VCE= -1.0V 100 600 IC = -300 mA; VCE= -1.0V 60 − VBE base-emitter voltage -1.2 IC = -300 mA; VCE= -1.0V CCBO collector-base capacitance VCB = 10V ; f = 1 MHz − fT transition frequency IC = 10 mA; VCE = 5 V ; f = 50 MHz 80 Note : 1. Pulse test: tp ≤ 300uSec; δ ≤ 0.02. 2. hFE: Classification Q: 100 to 250, R: 160 to 400, S: 250 to 600 V 12(typ.) pF − MHz RATING CHARACTERISTIC CURVES ( CH807PT ) Total power dissipation Ptot = f (TS ) Collector cutoff current ICBO = f (TA) VCB = 25V 400 10 mW V CBO 5 nA 10 4 P tot 300 250 10 max 3 200 10 150 typ 2 100 10 1 50 0 0 20 40 60 80 120 OC 100 10 0 150 0 50 oC 100 TS 150 TA Permissible Pulse Load Permissible Pulse Load R thJS = f (t p ) Ptotmax / PtotDC = f (t p ) 10 3 10 3 Ptotmax / PtotDC K/W R thJS 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 10 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 10 1 -2 s tp 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s tp 10 0 RATING CHARACTERISTIC CURVES ( CH807PT ) Collector-emitter saturation voltage Base-emitter saturation voltage IC = f (VCEsat ), h FE = 10 IC = f (VBEsat ), h FE = 10 10 3 ΙC 10 3 mA ΙC 150 ooC 25 C -50 oC 10 2 mA 10 2 5 5 10 1 10 1 5 5 10 0 10 0 5 5 10 -1 0 0.2 150 oC 25 oC -50 oC 0.4 0.6 V 10 -1 0.8 0 2.0 1.0 3.0 DC current gain hFE = f (IC ) Transition frequency fT = f (IC) VCE = 5V VCE = 5V 4.0 10 3 10 3 h FE 5 V V BEsat VCEsat fT 100 oC 25 oC MHz 5 -50 oC 10 2 5 10 2 5 10 1 5 10 0 10 -1 10 0 10 1 10 2 mA 10 3 ΙC 10 1 10 0 10 1 3 10 2 mA ΙC 10