CHENMKO CHT817PT

CHENMKO ENTERPRISE CO.,LTD
CHT817PT
SURFACE MOUNT
NPN Muti-Chip General Purpose Amplifier
VOLTAGE 45 Volts
CURRENT 0.5 Ampere
APPLICATION
* AF input stages and driver applicationon equipment.
* Other general purpose applications.
FEATURE
.066 (1.70)
(3)
(2)
.055 (1.40)
.047 (1.20)
.007 (0.177)
.103 (2.64)
.086 (2.20)
.028 (0.70)
.020 (0.50)
.045 (1.15)
.033 (0.85)
3
.002 (0.05)
* HFE(Q):LT
* HFE(R):IT
* HFE(S):MT
.110 (2.80)
.082 (2.10)
.119 (3.04)
(1)
MARKING
CIRCUIT
.019 (0.50)
.041 (1.05)
.033 (0.85)
* Low colloector-emitter saturation.
* High saturation current capability.
.018 (0.30)
SOT-23
* Small surface mounting type. (SOT-23)
* High current gain.
* Suitable for high packing density.
1
2
SOT-23
Dimensions in inches and (millimeters)
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
50
V
VCEO
collector-emitter voltage
open base
−
45
V
VCES
collector-base voltage
open emitter
−
5
V
VEBO
emitter-base voltage
open collector
−
5
V
IC
collector current (DC)
−
500
mA
ICM
peak collector current
−
1000
mA
IBM
peak base current
−
200
mA
Ptot
total power dissipation
−
330
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004-9
RATING CHARACTERISTIC ( CHT817PT )
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
VALUE
UNIT
note 1
105
K/W
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
ICBO
PARAMETER
collector cut-off current
CONDITIONS
MIN.
MAX.
UNIT
IE = 0; VCB = 25 V
−
100
nA
IC = 0; VCB = 25 V; TA = 150 OC
−
50
uA
nA
IEBO
emitter cut-off current
IC = 0; VEB = 4 V
−
100
hFE
DC current gain
IC = 100 mA; VCE =1.0V; note 1
100
600
VCEsat
collector-emitter saturation
voltage
IC = 500 mA ; I B = 50 mA
−
700
mV
VBEsat
base-emitter saturation voltage
IC = 500 mA; IB = 50mA
1.2
V
Cc
collector capacitance
IE = ie = 0; VCB = 10V ; f = 1 MHz
−
6.0
pF
fT
transition frequency
IC = 50 mA; VCE = 5 V ;
f = 100 MHz
170
−
MHz
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2. hFE: Classification Q: 100 to 250, R: 160 to 400, S: 250 to 600
RATING CHARACTERISTIC CURVES ( CHT817PT )
Total power dissipation Ptot = f (TS )
Collector cutoff current ICBO = f (TA)
VCB = 25V
400
10
mW
V CBO
5
nA
10
4
P tot
300
250
10
max
3
200
10
150
typ
2
100
10
1
50
0
0
20
40
60
80
120 OC
100
10 0
150
0
50
oC
100
TS
150
TA
Permissible Pulse Load
Permissible Pulse Load R thJS = f (t p )
Ptotmax / PtotDC = f (t p )
10 3
10 3
Ptotmax / PtotDC
K/W
R thJS
10 2
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 2
10 1
10
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
0
10 -1
-6
10
10
-5
10
-4
10
-3
10
10 1
-2
s
tp
10
0
10 0
-6
10
10
-5
10
-4
10
-3
10
-2
s
tp
10
0
RATING CHARACTERISTIC CURVES ( CHT817PT )
Collector-emitter saturation voltage
Base-emitter saturation voltage
IC = f (VCEsat ), h FE = 10
IC = f (VBEsat ), h FE = 10
10 3
ΙC
10 3
mA
ΙC
150 ooC
25 C
-50 oC
10 2
mA
10 2
5
5
10 1
10 1
5
5
10 0
10 0
5
5
10 -1
0
0.2
150 oC
25 oC
-50 oC
0.4
0.6
V
10 -1
0.8
0
2.0
1.0
3.0
DC current gain hFE = f (IC )
Transition frequency fT = f (IC)
VCE = 5V
VCE = 5V
4.0
10 3
10 3
h FE 5
V
V BEsat
VCEsat
fT
100 oC
25 oC
MHz
5
-50 oC
10
2
5
10 2
5
10 1
5
10 0
10 -1
10 0
10 1
10 2
mA 10 3
ΙC
10 1
10 0
10 1
3
10 2
mA
ΙC
10