CHENMKO ENTERPRISE CO.,LTD CHP69PT SMALL FLAT PNP Medium Power Transistor VOLTAGE 20 Volts CURRENT 1 Ampere APPLICATION * General purpose switching and amplification * Audio power amplifier SC-73/SOT-223 FEATURE * Small flat package. ( SC-73/SOT-223 ) * Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-1A) * High speed switching time: tstg= 1.0uSec (typ.) 1.65+0.15 6.50+0.20 0.90+0.05 CONSTRUCTION 0.70+0.10 * PNP Switching Transistor 0.70+0.10 2.30+0.1 2.0+0.3 0.9+0.2 2.0+0.3 3.5+0.2 * PC= 1.35W (mounted on printed-circuit board). * High saturation current capability. 7.0+0.3 3.00+0.10 0.27+0.05 0.01~0.10 0.70+0.10 4.60+0.1 1 1 Base 2 3 2 Collector ( Heat Sink ) CIRCUIT 3 Emitter 1 B 2 C 3 E SC-73/SOT-223 Dimensions in millimeters MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) SYMBOL MIN. MAX. UNITS Collector - Base Voltage RATINGS Open Emitter CONDITION VCBO - -32 Volts Collector - Emitter Voltage Open Base VCEO - -20 Volts Emitter - Base Voltage Open Collector VEBO - -5 Volts IC - -1 Amps Peak Collector Current ICM - -2 Amps Peak Base Current IBM - -0.2 Amps PTOT - 1.35 W +150 o C C C Collector Current DC Total Power Dissipation Storage Temperature Junction Temperature Operating Ambient Temperature TA ≤ 25OC; Note 1 TSTG -65 TJ - +150 o TAMB -65 +150 o Note 1. Transistor mounted on printed-circuit board, Mounting pad for collector 10 mm2.. 2. Measured at Pulse Width 300 us, Duty Cycle 2%. 2003-5 RATING CHARACTERISTIC CURVES ( CHP69PT ) THERMAL CHARACTERISTICS CONDITION SYMBOL MIN. TYPE MAX. Thermal Resistance 1 PARAMETERS Note 1 RθJ-A - 90 - UNITS O Thermal Resistance 2 Note 1 RθJ-S - 10 - O C/W C/W Note : 1. Transistor mounted on printed-circuit board, Mounting pad for collector 10 mm2.. CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) PARAMETERS SYMBOL MIN. TYPE MAX. UNITS Collector Cut-off Current IE=0; VCB=-25V IE=0; VCB=-25V; TJ=150OC ICBO - - -100 -10 nA uA Emitter Cut-off Current IC=0; VEB=-5V ICEO - - -100 nA DC Current Gain IC=-5mA; VCE=-10V IC=-500mA; VCE=-1.0V IC=-1.0A; VCE=-1.0V hFE 50 85 60 - 375 - DC Current Gain CHP69-16 CHP69-25 IC=-500mA; VCE=-1.0V hFE 100 160 - 250 375 DC Current Gain CHP69-16/IN IC=-10mA; VCE=-1.8V hFE 140 - 230 Collector-Emitter Saturation Voltage IC=-1.0A; IB=-100mA VCEsat - - -500 mVolts Base-Emitter Saturatio Voltage IC=-5mA; VCE=-10V IC=-1.0A; VCE=-1.0V VBEsat - -620 - -1.0 mVolts Volts Collector Capacitance IE=ie=0; VCB=-5.0V; f=1MHz CC - 48 - pF Transition Frequency IC=-10mA; VCE=-5V; f=100MHz fT 40 - - MHz DC Current Gain Ratio of The Complementary pairs IICI=0.5A; IVCEI=1.0V hFE1 / hFE2 - - 1.6 Note : 1. Pulse test: tp ≤ 300uSec; δ ≤ 0.02. CONDITION RATING CHARACTERISTIC CURVES ( CHP69PT ) Typical Electrical Characteristics Figure 1. Typical DC Current Gain 400 DC CURRENT GAIN hFE VCE=-1.0V 300 200 100 0 -0.1 -1.0 -10 -100 -1000 -10000 COLLECTOR CURRENT Ic (mA) Figure 2. Typical DC Current Gain 400 VCE=-1.8V DC CURRENT GAIN hFE O TA=150 C 300 200 25OC -40OC 100 0 -0.1 -1.0 -10 -100 COLLECTOR CURRENT Ic (mA) -1000 -10000