CHENMKO 2SB772ZPT

CHENMKO ENTERPRISE CO.,LTD
2SB772ZPT
SMALL FLAT
PNP Epitaxial Transistor
VOLTAGE 30 Volts
CURRENT 3 Ampere
APPLICATION
* Power driver and Dc to DC convertor .
FEATURE
* Small flat package. (SC-73/SOT-223)
* Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-2A)
* High speed switching time: tstg= 1.0uSec (typ.)
SC-73/SOT-223
1.65+0.15
* PC= 1.5 W (mounted on ceramic substrate).
* High saturation current capability.
6.50+0.20
0.90+0.05
3.5+0.2
CONSTRUCTION
0.70+0.10
0.70+0.10
2.30+0.1
2.0+0.3
0.9+0.2
2.0+0.3
* PNP Switching Transistor
7.0+0.3
3.00+0.10
0.27+0.05
0.01~0.10
0.70+0.10
4.60+0.1
1
1 Base
CIRCUIT
3
2
2 Emitter
C (3)
3 Collector ( Heat Sink )
(1) B
E (2)
SC-73/SOT-223
Dimensions in millimeters
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )
SYMBOL
MIN.
MAX.
UNITS
Collector - Base Voltage
RATINGS
Open Emitter
CONDITION
VCBO
-
-40
Volts
Collector - Emitter Voltage
Open Base
VCEO
-
-30
Volts
Emitter - Base Voltage
Open Collector
VEBO
-
-5
Volts
IC
-
-3
Amps
Peak Collector Current
ICM
-
-3
Amps
Peak Base Current
IBM
-
-0.5
Amps
PTOT
-
1500
mW
TSTG
-55
+150
o
C
C
C
Collector Current DC
Total Power Dissipation
TA ≤ 25OC; Note 1
Storage Temperature
Junction Temperature
Operating Ambient Temperature
TJ
-
+150
o
TAMB
-55
+150
o
Note
1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t.
2. Measured at Pulse Width 300 us, Duty Cycle 2%.
2004-8
RATING CHARACTERISTIC CURVES ( 2SB772ZPT )
CHARACTERISTICS ( At TA = 25oC unless otherwise noted )
SYMBOL
MIN.
TYPE
MAX.
UNITS
Collector Cut-off Current
PARAMETERS
IE=0; VCB=-30V
CONDITION
ICBO
-
-
-1.0
uA
Emitter Cut-off Current
IC=0; VEB=-3V
IEBO
-
-
-1.0
uA
DC Current Gain
VCE=-2V; Note 1
IC=-0.02A
IC=-1.0A; Note 2
hFE
30
100
160
500
Collector-Emitter Saturation Voltage
IC=-2A; IB=-0.2A
VCEsat
-
-0.3
-0.5
Volts
Base-Emitter Saturatio Voltage
IC=-2A; IB=-0.2A
VBEsat
-
-1.0
-2.0
Volts
Collector Capacitance
IE=ie=0; VCB=-10V;
f=1MHz
CC
-
55
-
pF
Transition Frequency
IC=-0.1A; VCE=-5.0V;
f=100MHz
fT
-
100
-
MHz
SYMBOL
MIN.
TYPE
MAX.
UNITS
ton
-
0.1
-
uSec
ts
-
1.0
-
uSec
tf
-
0.1
-
uSec
SWITCHING TIMES ( Between 10% and 90% levels )
PARAMETERS
CONDITION
OUTPUT
IB2
INPUT
Storage Time
IB1
20uSec
Fall Time
IB2
30 ohmS
Turn-on Time
-IB1=IB2=0.05A
Duty cycle<1%
IB1
-30V
Note :
1. Pulse test: tp ≤ 300uSec; δ ≤ 0.02.
2. hFE(2) Classification Q: 100 to 200, P: 160 to 320, E: 250 to 500.
RATING CHARACTERISTIC CURVES ( 2SB772ZPT )
Typical Electrical Characteristics
Figure 2. Cutoff Frequency - IC
3000
3000
1000
1000
V CE =-5V
CUTOFF FREQUENCY (MHz)
COLLECTOR CAPACITANCE CC (pF)
Figure 1. CC - Reverse VCB
100
10
1
-0.1
-0.3
-1.0
-3.0
-10
-30
100
10
1
-1
-100
-10
COLLECTOR-BASE REVERSE BIAS VOLTAGE V CB (V)
COMMON EMITTER
V CE =-2V
DC CURRENT GAIN hFE
500
300
100
50
30
COLLECTOR POWER DISSIPATION PC (W)
1.5
1000
1.4
(1) Mounted on ceramic substrate
( 250mm 2x0.8t )
(2) No heat sink
(1)
1.2
1.0
0.8
(2)
0.6
0.4
0.2
0
10
-10
-30
-100
-300
-1000
0
-3000
20
40
Figure 5. VCE(sat) - IC
80
100
120
140
160
Figure 6. VBE(sat) - IC
-1
-10
COMMON EMITTER
BASE-EMITTER SATURATION VOLTAGE
VBE(sat) (V)
COLLECTOR-EMITTER SATURATION VOLTAGE
VCE(sat) (V)
60
AMBIENT TEMPERATURE T A ( OC)
COLLECTOR CURRENT I C (mA)
I C /I B =10
-0.3
-0.1
-0.05
-0.03
-0.01
-10
-1000
Figure 4. PC - TA
Figure 3. hFE - IC
-0.5
-100
COLLECTOR CURRENT I C (mA)
-30
-100
-300
COLLECTOR CURRENT I C (mA)
-1000
-3000
COMMON EMITTER
-5
I C /I B =10
-3
-1
-0.5
-0.3
-0.1
-10
-30
-100
-300
COLLECTOR CURRENT I C (mA)
-1000
-3000
RATING CHARACTERISTIC CURVES ( 2SB772ZPT )
Typical Electrical Characteristics
Figure 9. Safe Operation Area
COLLECTOR CURRENT IC (mA)
-30000
-10000
1 mS
-5000
-3000
100 mS
-1000
-500
-300
-100
-50
-30
-10
-0.1
1S
Single nonrepetitive pulse
TA=25OC
Curve must be derated linearly
with increase in temperature
Tested without a substrate
-0.3
-1.0
-3.0
-10
-30
COLLECTOR-EMITTER VOLTAGE V CE (V)
-100