CHENMKO CHTA44ZPT

CHENMKO ENTERPRISE CO.,LTD
CHTA44ZPT
SURFACE MOUNT
NPN SILICON Transistor
VOLTAGE 400 Volts
CURRENT 0.3 Ampere
APPLICATION
* Telephony and proferssional communction equipment.
* Other switching applications.
SC-73/SOT-223
FEATURE
* Small flat package. ( SC-73/SOT-223 )
1.65+0.15
* Suitable for high packing density.
* High saturation current capability.
6.50+0.20
0.90+0.05
3.5+0.2
7.0+0.3
3.00+0.10
CONSTRUCTION
0.9+0.2
2.0+0.3
* NPN SILICON Transistor
0.70+0.10
0.70+0.10
2.30+0.1
2.0+0.3
0.27+0.05
0.01~0.10
0.70+0.10
4.60+0.1
1
1 Base
2
3
2 Collector ( Heat Sink )
CIRCUIT
3 Emitter
1
B
2
C
3
E
SC-73/SOT-223
Dimensions in millimeters
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
collector-emitter voltage
open base
−
450
400
V
VCEO
VEBO
emitter-base voltage
open collector
−
6.0
V
IC
collector current (DC)
−
300
mA
Ptot
total power dissipation
−
2
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Tamb ≤ 25 °C; note 1
V
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004-7
RATING CHARACTERISTIC CURVES ( CHTA44ZPT )
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
VCB = 400 V
−
100
nA
IEBO
emitter cut-off current
VEB=4.0V
−
100
nA
hFE
DC current gain
IC = 1.0 mA; V CE = 10V
IC = 10mA; VCE = 10V
40
−
50
IC = 50 mA; VCE =10V
200
−
IC = 100 mA; VCE =10V
45
20
IC = 1.0 mA; IB= 0.1m A
−
0.40
V
IC =-10 mA; IB = 1.0 m A
−
−
0.50
0.75
V
V
−
0.75
V
VCEsat
collector-emitter saturation
voltage
IC =50mA; IB =5.0mA
−
VBEsat
base-emitter saturation voltage IC =-10 mA; IB = 1.0 m A
Cob
collector capacitance
IE = ie = 0; VCB = 2 0 V; f = 1 MHz
−
7.0
pF
CIb
emitter capacitance
VEB=0.5V,IC=0,f=1.0MHZ
−
130
pF
fT
transition frequency
20
−
IC = 10 mA; VCE = 1 0 V;
f = 10 MHz
MHz