CHENMKO ENTERPRISE CO.,LTD CHTA44ZPT SURFACE MOUNT NPN SILICON Transistor VOLTAGE 400 Volts CURRENT 0.3 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SC-73/SOT-223 FEATURE * Small flat package. ( SC-73/SOT-223 ) 1.65+0.15 * Suitable for high packing density. * High saturation current capability. 6.50+0.20 0.90+0.05 3.5+0.2 7.0+0.3 3.00+0.10 CONSTRUCTION 0.9+0.2 2.0+0.3 * NPN SILICON Transistor 0.70+0.10 0.70+0.10 2.30+0.1 2.0+0.3 0.27+0.05 0.01~0.10 0.70+0.10 4.60+0.1 1 1 Base 2 3 2 Collector ( Heat Sink ) CIRCUIT 3 Emitter 1 B 2 C 3 E SC-73/SOT-223 Dimensions in millimeters LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − collector-emitter voltage open base − 450 400 V VCEO VEBO emitter-base voltage open collector − 6.0 V IC collector current (DC) − 300 mA Ptot total power dissipation − 2 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tamb ≤ 25 °C; note 1 V Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-7 RATING CHARACTERISTIC CURVES ( CHTA44ZPT ) CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current VCB = 400 V − 100 nA IEBO emitter cut-off current VEB=4.0V − 100 nA hFE DC current gain IC = 1.0 mA; V CE = 10V IC = 10mA; VCE = 10V 40 − 50 IC = 50 mA; VCE =10V 200 − IC = 100 mA; VCE =10V 45 20 IC = 1.0 mA; IB= 0.1m A − 0.40 V IC =-10 mA; IB = 1.0 m A − − 0.50 0.75 V V − 0.75 V VCEsat collector-emitter saturation voltage IC =50mA; IB =5.0mA − VBEsat base-emitter saturation voltage IC =-10 mA; IB = 1.0 m A Cob collector capacitance IE = ie = 0; VCB = 2 0 V; f = 1 MHz − 7.0 pF CIb emitter capacitance VEB=0.5V,IC=0,f=1.0MHZ − 130 pF fT transition frequency 20 − IC = 10 mA; VCE = 1 0 V; f = 10 MHz MHz