CHENMKO ENTERPRISE CO.,LTD CHTA27ZPT SURFACE MOUNT NPN SILICON Transistor VOLTAGE 60 Volts CURRENT 0.5 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SC-73/SOT-223 FEATURE * Small flat package. ( SC-73/SOT-223 ) * Suitable for high packing density. 1.65+0.15 6.50+0.20 0.90+0.05 3.00+0.10 2.0+0.3 MARKING 0.70+0.10 * ZKN 0.70+0.10 2.30+0.1 0.9+0.2 2.0+0.3 3.5+0.2 *NPN SILICON Transistor 7.0+0.3 CONSTRUCTION 0.27+0.05 0.01~0.10 0.70+0.10 4.60+0.1 1 1 Base CIRCUIT 3 2 2 Emitter C (3) 3 Collector ( Heat Sink ) (1) B E(2) SC-73/SOT-223 Dimensions in millimeters LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 60 VCEO collector-emitter voltage open base − 60 V VEBO emitter-base voltage open collector − 10 V IC collector current (DC) − 500 mA Ptot total power dissipation − 2 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tamb ≤ 25 °C; note 1 V Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-7 RATING CHARACTERISTIC CURVES ( CHTA27ZPT ) THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT 104 K/W note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current VCB = 50 V − 100 nA IEBO emitter cut-off current VEB = 1 0 V − 100 nA hFE DC current gain IC = 10 mA; VCE = 5V IC = 100 mA; VCE =5V VCE(sat) collector-emitter saturation voltage IC = 100 mA; IB = 0.1 m A − 1.5 V VBE(ON) base-emitter saturation voltage I C = 100 mA; VCE=5V − 2 V fT transition frequency IC = 10 mA; VCE = 5 V; f = 100MHz 125 10000 10000 − − − MHz