POWER TRANSISTOR E13003 SWITCHING REGULATOR APPLICATION • High speed switching • Suitable for switching regulator and motor control • Case : TO-92 molded plastic body TO-92 A DIM B R A B C D F G H J K L N P R V SEATING PLANE P L F K D G H J V NPN SILICON TRANSISTOR INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 --0.250 --0.080 0.105 --0.100 0.135 --0.135 --- MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.46 0.56 0.41 0.48 1.15 1.39 2.42 2.66 0.46 0.61 12.70 --6.35 --2.04 2.66 --2.54 3.43 --3.43 --- N C 1 2 3 N FEATURES o Tc=25 C unless otherwise specified Parameter Symbol Value UNIT Collector dissipation PC 20 W Collector current (DC) IC 1.5 A Collector current (Pulse) ICP Operating and storage junction temperature range TJ, TSTG ELECTRICAL CHARACTERISTICS Parameter 3 A o o o -55 C to +150 C C o Tc=25 C unless otherwise specified Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=1mA , IE=0 700 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA , IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE=1mA , IC=0 9 V Collector cut-off current ICBO VCB=700V , IE=0 1 mA Collector cut-off current ICEO VCE=400V , IB=0 500 μA Emitter cut-off current IEBO VEB=9V , IC=0 1 mA hFE(1) VCE=2V , IC=0.5mA 8 hFE(2) VCE=10V , IC=0.5mA 5 Collector-emitter saturation voltage VCEsat IC=1A , IB=250mA 1 V Base-emitter saturation voltage VBEsat IC=1A , IB=250mA 1.2 V 3 V DC current gain IE=2A 40 Base-emitter voltage VBE Transition frequency fT Fall time tf IC=1A , IB1=-IB2=0.2mA , 0.5 μS Storage time ts VCC=100V 2.5 μS VCE=10V , IC=100mA f=1MHz 5 MHz RATINGS AND CHARACTERISTIC CURVES E13003