POWER TRANSISTOR E13002 SWITCHING REGULATOR APPLICATION • High speed switching • Suitable for switching regulator and motor control • Case : TO-126 molded plastic body ±B ± U TO-126 F Q ±A ± DIM A B C D F G H J K M Q R S U V C M 1 2 3 H K J V G R 0.25 (0.010) S NPN SILICON TRANSISTOR D A M B MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 ±±± M 2 PL 0.25 (0.010) FEATURES M INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 ±±± M A M B M o Tc=25 C unless otherwise specified Parameter Symbol Value UNIT Power dissipation PCM 1.2 W Collector current ICM Operating and storage junction temperature range TJ, TSTG ELECTRICAL CHARACTERISTICS Parameter 1.0 o A o o -55 C to +150 C C o Tc=25 C unless otherwise specified Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA , IE=0 600 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA , IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE=100μA , IC=0 6 V Collector cut-off current ICBO VCB=600V , IE=0 100 μA Emitter cut-off current IEBO VEB=6V , IC=0 100 μA hFE(1) VCE=10V , IC=100mA 8 60 hFE(2) VCE=10V , IC=200mA 9 40 hFE(3) VCE=10V , IC=10mA 6 Collector-emitter saturation voltage VCEsat IC=200mA , IB=40mA 0.8 V Base-emitter saturation voltage VBEsat IC=200mA , IB=40mA 1.1 V DC current gain VCE=10V , IC=100mA Transition frequency fT Fall time tf IC=1A , IB1=-IB2=0.2A , 0.5 μS Storage time ts VCC=100V 2.5 μS f=1MHz 5 MHz RATINGS AND CHARACTERISTIC CURVES E13002