DAESAN E13003TO-220

POWER TRANSISTOR E13003
SWITCHING REGULATOR APPLICATION
• High speed switching
• Suitable for switching regulator
and motor control
• Case : TO-220 molded plastic body
TO-220
S E ATING
P L ANE
±T ±
B
F
C
T
S
4
A
Q
1
2 3
U
H
K
Z
NPN SILICON TRANSISTOR
FEATURES
L
R
V
J
INC HE S
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
±±±
±±± 0.080
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
G
D
N
MIL L IME TE R S
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
±±±
±±±
2.04
o
Tc=25 C unless otherwise specified
Parameter
Symbol
Value
UNIT
Collector dissipation
PC
20
W
Collector current (DC)
IC
1.5
A
Collector current (Pulse)
ICP
Operating and storage junction temperature range
TJ, TSTG
ELECTRICAL CHARACTERISTICS
Parameter
3
A
o
o
o
-55 C to +150 C
C
o
Tc=25 C unless otherwise specified
Symbol
Test conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=1mA , IE=0
700
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=10mA , IB=0
400
V
Emitter-base breakdown voltage
V(BR)EBO
IE=1mA , IC=0
9
V
Collector cut-off current
ICBO
VCB=700V , IE=0
1
mA
Collector cut-off current
ICEO
VCE=400V , IB=0
500
μA
Emitter cut-off current
IEBO
VEB=9V , IC=0
1
mA
hFE(1)
VCE=2V , IC=0.5mA
8
hFE(2)
VCE=10V , IC=0.5mA
5
Collector-emitter saturation voltage
VCEsat
IC=1A , IB=250mA
1
V
Base-emitter saturation voltage
VBEsat
IC=1A , IB=250mA
1.2
V
3
V
DC current gain
IE=2A
40
Base-emitter voltage
VBE
Transition frequency
fT
Fall time
tf
IC=1A , IB1=-IB2=0.2mA ,
0.5
μS
Storage time
ts
VCC=100V
2.5
μS
VCE=10V , IC=100mA
f=1MHz
5
MHz
RATINGS AND CHARACTERISTIC CURVES E13003