TGS MPS2222A

TIGER ELECTRONIC CO.,LTD
TO-92
MPS2222A
Plastic-Encapsulate Transistors
TO-92
TRANSISTOR (NPN )
1. EMITTER
FEATURE
Complementary NPN Type available (MPS2222)
2. BASE
3. COLLECTOR
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
75
V
VCEO
Collector-Emitter Voltage
40
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current -Continuous
600
mA
PC
Collector Power Dissipation
625
mW
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
1 2 3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
MIN
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC= 10uA , IE=0
75
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= 10mA ,
40
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 10uA, IC=0
6
V
Collector cut-off current
ICBO
VCB= 60V, IE=0
10
nA
Collector cut-off current
ICEX
VCE= 60V,VEB(Off)=3V
10
nA
Emitter cut-off current
IEBO
VEB= 3 V, IC=0
100
nA
hFE(1)
VCE=10V,IC= 150mA
100
hFE(2)
VCE=10V,IC= 0.1mA
40
VCE=10V, IC= 500mA
42
DC current gain
*
hFE(3)
Collector-emitter saturation voltage
Base-emitter saturation voltage
*
conditions
IB=0
300
VCE(sat)(1)
*
IC= 500mA, IB=50mA
0.6
V
VCE(sat)(2)
*
IC= 150mA, IB=15mA
0.3
V
IC= 500mA, IB= 50mA
1.2
V
VBE(sat)
*
Delay time
td
VCC=30V, VEB(Off)=-0.5V,
10
nS
Rise time
tr
IC=150mA,IB1=15mA
25
nS
Storage time
tS
225
nS
Fall time
tf
60
nS
Transition frequency
fT
VCC=30V,Ic=150mA,IB1=IB2=15mA
VCE=20V, IC=20mA, f=100MHz
300
pulse test
CLASSIFICATION OF hFE(1)
Rank
Range
L
H
100-200
200-300
MHz
Typical Characteristics
MPS2222A