2SA1020 TO-92L Transistor (PNP) TO-92L 1. EMITTER 4.700 5.100 2. COLLECTOR 7.800 8.200 Features 1 2 3 3. BASE 0.600 0.800 0.350 0.550 Power amplifier applications 13.800 14.200 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units 1.270 TYP VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current –Continuous -2 A PC Collector Power Dissipation 900 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ 2.440 2.640 0.000 0.300 1.600 0.350 0.450 3.700 4.100 1.280 1.580 4.000 Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Symbol Parameter Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC =-100µA,IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC =-10mA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA,IC=0 -5 V Collector cut-off current ICBO VCB=-50V,IE=0 -1 µA Emitter cut-off current IEBO VEB=-5V,IC=0 -1 µA hFE(1) VCE=-2V,IC=-0.5A 70 hFE(2) VCE=-2V,IC=-1.5A 40 Collector-emitter saturation voltage VCE(sat) IC=-1A,IB=-50mA -0.5 V Base-emitter saturation voltage VBE(sat) IC=-1A,IB=-50mA -1.2 V 240 DC current gain fT Transition frequency Collector output capacitance Cob Turn-on time ton Storage time ts Fall time tf CLASSIFICATION OF Rank Range VCE=-2V,IC=-500mA 100 MHz VCB=-10V,IE=0,f=1MHz 40 pF 0.1 μs 1 μs 0.1 μs VCC=-30V,IB1=-IB2=-0.05A, IC=-1A hFE(1) O Y 70-140 120-240 2SA1020 TO-92L Transistor (PNP) Typical Characteristics 2SA1020 TO-92L Transistor (PNP)