Single P-channel MOSFET ELM32403LA-S ■General description ■Features ELM32403LA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=-40V Id=-8A Rds(on) < 55mΩ (Vgs=-10V) Rds(on) < 94mΩ (Vgs=-4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Ta=25°C Ta=70°C Continuous drain current Pulsed drain current Ta=25°C Ta=70°C Power dissipation Symbol Vds Vgs Limit -40 ±20 Unit V V Id -8 -6 A Idm -32 A Pd Junction and storage temperature range Tj, Tstg 28 18 -55 to 150 Note 3 W °C ■Thermal characteristics Parameter Symbol Typ. Max. Unit Maximum junction-to-case Steady-state Rθjc 3 °C/W Maximum junction-to-ambient Steady-state Rθja 75 °C/W ■Pin configuration Note ■Circuit TO-252-3(TOP VIEW) D TAB 2 1 Pin No. 1 Pin name GATE 2 3 DRAIN SOURCE 3 4- 1 G S Single P-channel MOSFET ELM32403LA-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition Min. BVdss Id=-250μA, Vgs=0V -40 Zero gate voltage drain current Idss Vds=-32V, Vgs=0V Vds=-30V, Vgs=0V, Tj=125°C Gate-body leakage current Igss Vds=0V, Vgs=±20V Gate threshold voltage On state drain current Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-10V, Vds=-5V Static drain-source on-resistance Rds(on) ±250 nA -2.5 V A mΩ 65 11 94 mΩ S Diode forward voltage Vsd Is=If, Vgs=0V Max. body-diode continuous current Pulsed body-diode current Is Ism DYNAMIC PARAMETERS Input capacitance Output capacitance Ciss Coss Vgs=0V, Vds=-10V, f=1MHz Crss Vgs=-10V, Vds=-20V Id=-8A Gate-source charge Gate-drain charge Turn-on delay time Qgs Qgd td(on) Turn-on rise time Turn-off delay time tr Vgs=-10V, Vds=-20V td(off) Id≈-1A, Rl=1Ω, Rgen=6Ω tf trr Qrr μA 55 Gfs Turn-off fall time Body diode reverse recovery time Body diode reverse recovery charge -1.5 -1 -10 38 Forward transconductance Qg V Vgs=-10V, Id=-8A Vgs=-4.5V, Id=-6A Vds=-10V, Id=-8A Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge -1.0 -32 Ta=25°C Typ. Max. Unit Note If=-5A, dI/dt=100A/μs NOTE : 1. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 4- 2 1 1 1 -1 V 1 -1.3 -2.6 A A 3 690 310 pF pF 75 pF 14.0 nC 2 2.2 1.9 6.7 13.4 nC nC ns 2 2 2 9.7 19.8 19.4 35.6 ns ns 2 2 12.3 15.5 7.9 22.2 ns ns nC 2 NIKO-SEM P-Channel Logic Level Enhancement Mode Field Effect Transistor Single P-channel MOSFET ELM32403LA-S ■Typical electrical and thermal characteristics 4- 3 P5504EDG TO-252 Lead-Free NIKO-SEM P-Channel Logic Level Enhancement SingleMode P-channel MOSFET Field Effect Transistor ELM32403LA-S P5504EDG TO-252 Lead-Free 4- 4 AUG-19-2004