ET-20N50

ET-20N50
N-Channel MOSFET
Features
■
RDS(on) (Max 0.26 Ω )@VGS=10V
■
Gate Charge (Typical 90nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)
■
■
■
{
Symbol
2. Drain
●
◀
1. Gate{
▲
●
●
{
General Description
3. Source
TO-247
This Power MOSFET is manufactured advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.
G DS
Absolute Maximum Ratings
Symbol
VDSS
ID
Value
Units
Drain to Source Voltage
Parameter
500
V
Continuous Drain Current(@TC = 25°C)
20
A
Continuous Drain Current(@TC = 100°C)
13
A
80
A
±30
V
IDM
Drain Current Pulsed
VGS
Gate to Source Voltage
(Note 1)
EAS
Single Pulsed Avalanche Energy
(Note 2)
1110
mJ
EAR
Repetitive Avalanche Energy
(Note 1)
25.0
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD
TSTG, TJ
TL
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
4.5
V/ns
250
W
2.00
W/°C
- 55 ~ 150
°C
300
°C
Thermal Characteristics
Symbol
Value
Parameter
Min.
Typ.
Max.
Units
RθJC
Thermal Resistance, Junction-to-Case
-
-
0.50
RθCS
Thermal Resistance, Case to Sink
-
0.24
-
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
-
-
40
°C/W
1
°C/W
BEIJING ESTEK ELECTRONICS CO.,LTD
ET-20N50
Electrical Characteristics
Symbol
( TC = 25 °C unless otherwise noted )
Parameter
Test Conditions
Min
Typ
Max
Units
500
-
-
V
-
0.6
-
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
Δ BVDSS/
Δ TJ
Breakdown Voltage Temperature
coefficient
ID = 250uA, referenced to 25 °C
IDSS
Drain-Source Leakage Current
IGSS
VDS = 500V, VGS = 0V
-
-
10
uA
VDS = 400V, TC = 125 °C
-
-
100
uA
Gate-Source Leakage, Forward
VGS = 30V, VDS = 0V
-
-
100
nA
Gate-source Leakage, Reverse
VGS = -30V, VDS = 0V
-
-
-100
nA
2.0
-
4.0
V
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250uA
RDS(ON)
Static Drain-Source On-state Resistance
VGS =10 V, ID = 10A
-
0.21
0.26
Ω
Forward Transconductance
VDS =50V , ID =10.0A
-
15
-
S
-
3350
-
-
490
-
-
50
-
gfs
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VGS =0 V, VDS =25V, f = 1MHz
pF
Dynamic Characteristics
td(on)
tr
td(off)
Turn-on Delay Time
VDD =250V, ID =20.0A, RG =25Ω
Rise Time
Turn-off Delay Time
(Note 4, 5)
-
60
-
-
210
-
-
170
-
ns
Fall Time
-
130
-
Qg
Total Gate Charge
-
90
-
Qgs
Gate-Source Charge
-
20
-
Qgd
Gate-Drain Charge(Miller Charge)
-
42
-
Min.
Typ.
Max.
-
-
20
-
-
80
IS =20.0A, VGS =0V
-
-
1.4
-
370
-
ns
IS=20.0A, VGS=0V, dIF/dt=100A/us
-
380
-
nC
tf
VDS =400V, VGS =10V, ID =20.0A
(Note 4, 5)
nC
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
IS
Continuous Source Current
ISM
Pulsed Source Current
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Q
Reverse Recovery Charge
Test Conditions
Integral Reverse p-n Junction
Diode in the MOSFET
Unit.
A
V
rr
※ NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L = 5.0mH, IAS =20.0A, VDD = 50V, RG = 25Ω , Starting TJ = 25°C
3. ISD ≤ 20.0A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially independent of operating temperature.
2
BEIJING ESTEK ELECTRONICS CO.,LTD