EXCELICS EPA960B

Excelics
EPA960B
PRELIMINARY DATA SHEET
High Efficiency Heterojunction Power FET
•
•
•
•
•
•
+38.5dBm TYPICAL OUTPUT POWER
18.5dB TYPICAL POWER GAIN AT 2GHz
0.5 X 9600 MICRON RECESSED
“MUSHROOM” GATE
Si3N4 PASSIVATION
ADVANCED EPITAXIAL HETEROJUNCTION
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY, AND HIGH RELIABILITY
Idss SORTED IN 240mA PER BIN RANGE
'
'
'
'
6
*
*
6
6
*
*
6
6
Chip Thickness: 50 ± 10 microns
(with > 20 microns Gold Plated Heat Sink (PHS) )
All Dimensions In Microns
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS
P1dB
G1dB
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression
Vds=8V, Ids=50% Idss
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
f= 2GHz
f= 4GHz
f= 2GHz
f= 4GHz
MIN
TYP
37.0
38.5
38.5
18.5
13.5
17.0
MAX
UNIT
dBm
dB
Idss
Saturated Drain Current
Vds=3V, Vgs=0V
1760
2880
Gm
Transconductance
Vds=3V, Vgs=0V
1920
3120
Vp
Pinch-off Voltage
Vds=3V, Ids=28mA
BVgd
Drain Breakdown Voltage Igd=9.6mA
-11
-15
V
BVgs
Source Breakdown Voltage Igs=9.6mA
-7
-14
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
-1.0
3760
mS
-2.5
5
MAXIMUM RATINGS AT 25OC
SYMBOLS
PARAMETERS
ABSOLUTE1
mA
CONTINUOUS2
Drain-Source Voltage
12V
8V
Gate-Source Voltage
-8V
-3V
Drain
Current
Idss
2.8A
Ids
Forward Gate Current
480mA
80mA
Igsf
Input Power
36dBm
@ 3dB Compression
Pin
o
Channel Temperature
175 C
150oC
Tch
o
Storage Temperature
-65/175 C
-65/150oC
Tstg
Total Power Dissipation
27 W
23 W
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Vds
Vgs
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
V
o
C/W
EPA960B
PRELIMINARY DATA SHEET
High Efficiency Heterojunction Power FET
S-PARAMETERS
FREQ
(GHz)
0.500
1.000
1.500
2.000
2.500
3.000
3.500
4.000
4.500
5.000
5.500
6.000
6.500
7.000
7.500
8.000
8.500
9.000
9.500
10.000
Note:
--- S11 --MAG ANG
0.959 -155.9
0.957 -168.7
0.957 -173.4
0.958 -176.1
0.958 -177.9
0.959 -179.4
0.960 179.4
0.961 178.4
0.961 177.4
0.962 176.5
0.963 175.6
0.964 174.8
0.965 174.0
0.966 173.2
0.966 172.4
0.967 171.7
0.968 170.9
0.968 170.2
0.969 169.4
0.970 168.7
8V, 1/2 Idss
--- S21 --MAG ANG
9.081
98.1
4.601
88.2
3.060
82.3
2.280
77.5
1.807
73.2
1.489
69.1
1.260
65.3
1.087
61.7
0.951
58.3
0.842
55.0
0.752
52.0
0.677
49.1
0.614
46.4
0.559
43.8
0.512
41.5
0.472
39.3
0.436
37.3
0.404
35.4
0.376
33.8
0.351
32.2
--- S12 --MAG ANG
0.013
18.6
0.014
19.1
0.014
23.6
0.015
29.0
0.015
34.7
0.016
40.2
0.017
45.4
0.019
50.1
0.020
54.3
0.022
57.8
0.024
60.8
0.026
63.3
0.028
65.2
0.030
66.8
0.033
67.9
0.035
68.8
0.038
69.4
0.040
69.8
0.043
70.0
0.046
70.0
--- S22 --MAG ANG
0.607 -173.3
0.618 -175.4
0.626 -175.7
0.636 -175.7
0.647 -175.6
0.659 -175.6
0.673 -175.8
0.687 -176.1
0.702 -176.5
0.716 -177.1
0.731 -177.8
0.746 -178.6
0.759 -179.5
0.773 179.6
0.786 178.5
0.798 177.4
0.809 176.3
0.820 175.1
0.830 173.9
0.840 172.7
The data included 0.7 mils diameter Au bonding wires:
4 gate wires, 20 mils each; 4 drain wires, 12 mils each; 10 source wires, 7 mils each.