EXCELICS EPA160B

Excelics
EPA160B
DATA SHEET
High Efficiency Heterojunction Power FET
•
•
•
•
•
•
+31.0dBm TYPICAL OUTPUT POWER
5.5dB TYPICAL POWER GAIN AT 18GHz
0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE
Si3N4 PASSIVATION
ADVANCED EPITAXIAL HETEROJUNCTION
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY, AND HIGH RELIABILITY
Idss SORTED IN 40mA PER BIN RANGE
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS
156
D
D
48
370
100
S
G
S
95
50
120
40
G
S
Chip Thickness: 75 ± 13 microns
All Dimensions In Microns
MIN
TYP
Output Power at 1dB Compression
f=12GHz
Vds=8V, Ids=50% Idss
f=18GHz
Gain at 1dB Compression
f=12GHz
Vds=8V, Ids=50% Idss
f=18GHz
Power Added Efficiency at 1dB Compression
Vds=8V, Ids=50% Idss
f=12GHz
29.0
31.0
31.0
10.5
5.5
Idss
Saturated Drain Current
Vds=3V, Vgs=0V
290
480
Gm
Transconductance
Vds=3V, Vgs=0V
320
500
Vp
Pinch-off Voltage
Vds=3V, Ids=4.5mA
BVgd
Drain Breakdown Voltage Igd=1.6mA
-11
-15
V
BVgs
Source Breakdown Voltage Igs=1.6mA
-7
-14
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
P1dB
G1dB
PAE
PARAMETERS/TEST CONDITIONS
540
50
9.0
MAX
dBm
dB
%
45
-1.0
660
PARAMETERS
ABSOLUTE1
mA
mS
-2.5
33
MAXIMUM RATINGS AT 25OC
SYMBOLS
UNIT
CONTINUOUS2
Drain-Source Voltage
12V
8V
Vds
Gate-Source Voltage
-8V
-3V
Vgs
Drain Current
Idss
435mA
Ids
Forward Gate Current
80mA
14mA
Igsf
Input
Power
28dBm
@3dB Compression
Pin
o
Channel Temperature
175 C
150oC
Tch
Storage Temperature
-65/175oC
-65/150oC
Tstg
Total Power Dissipation
4.1W
3.4W
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
V
o
C/W
EPA160B
DATA SHEET
High Efficiency Heterojunction Power FET
P-1dB & PAE vs. Vds
Pout & PAE vs. Pin
f = 12 GHz
Vds = 8V, Ids = 50% Idss
55
50
35
45
40
30
PAE (%)
P-1dB (dBm)
40
35
25
30
4
5
6
7
8
Pout (dBm) or PAE (%)
f = 12 GHz
Ids = 50% Idss
50
PAE
40
30
Pout
20
10
0
0
5
Drain-Source Voltage (V)
10
15
Pin (dBm)
S-PARAMETERS
8V, 1/2 Idss
FREQ
(GHz)
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
21.0
22.0
23.0
24.0
25.0
26.0
Note:
--- S11 ----- S21 --MAG ANG MAG
ANG
0.902 -115.3 15.468
116.0
0.884 -146.5 8.678
96.8
0.881 -158.7 5.971
86.9
0.881 -166.4 4.579
79.4
0.880 -172.1 3.705
72.6
0.878 -176.6 3.113
66.5
0.879 179.0 2.703
60.7
0.882 174.5 2.374
55.1
0.881 169.9 2.110
49.6
0.887 165.5 1.900
44.4
0.891 160.6 1.718
38.8
0.898 155.6 1.557
33.2
0.905 151.0 1.411
27.7
0.908 146.6 1.277
22.3
0.910 143.2 1.151
17.2
0.912 140.2 1.051
12.1
0.920 137.9 0.956
7.7
0.934 135.9 0.880
3.0
0.934 134.4 0.810
-1.7
0.932 133.9 0.742
-5.7
0.923 134.3 0.684
-8.6
0.934 135.0 0.641
-11.5
0.946 134.6 0.616
-14.3
0.948 133.8 0.579
-17.7
0.949 133.0 0.558
-20.0
0.935 131.3 0.527
-22.3
--- S12 --MAG ANG
0.025
38.1
0.028
27.8
0.030
28.6
0.031
30.7
0.032
35.1
0.034
38.3
0.036
40.0
0.038
41.6
0.038
44.4
0.040
45.0
0.042
45.8
0.044
45.9
0.044
45.4
0.046
43.1
0.047
42.3
0.048
39.5
0.050
37.6
0.052
37.6
0.054
34.6
0.057
33.8
0.060
32.2
0.063
32.4
0.068
32.5
0.072
33.3
0.079
32.7
0.084
33.0
--- S22 --MAG ANG
0.298 -138.8
0.342 -156.8
0.351 -163.1
0.359 -165.6
0.367 -165.7
0.381 -165.8
0.396 -164.7
0.416 -163.6
0.437 -162.9
0.461 -161.9
0.491 -161.5
0.521 -161.7
0.554 -162.8
0.580 -164.2
0.605 -166.4
0.626 -168.6
0.645 -171.6
0.665 -174.5
0.684 -177.7
0.697 178.4
0.700 174.7
0.707 171.7
0.718 168.7
0.719 166.0
0.722 163.7
0.723 162.4
The data included 0.7 mils diameter Au bonding wires:
2 gate wires, 15 mils each; 2 drain wires, 20 mils each; 6 source wires, 7 mils each.
20
25