2SK3535-01 FUJI POWER MOSFET 200304 Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications for Switching Foot Print Pattern Absolute Maximum Ratings at Tc=25°C ( unless otherwise specified) Item Drain-source voltage Continuous drain current Symbol V DS VDSX ID Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation ID(puls] VGS IAR *2 EAS *1 dV DS /dt dV/dt *3 PD Operating and storage temperature range Tch Tstg Ratings 250 220 ±37 ±3.4 *4 ±148 ±30 37 251.9 20 5 2.4 *4 270 +150 -55 to +150 Unit V V A A A V A mJ kV/µs kV/µs W W °C °C < *2 Tch =150°C *3 Remarks Equivalent circuit schematic (4) Drain(D) VGS=30V Ta=25°C VDS < =250V (1) Gate(G) (2) Source(S) [signal line] (3) Source(S) [power line] Ta=25°C IF < *1 L=0.309mH, Vcc=48V, See to Avalanche Energy Graph = BVDSS, Tch < = 150°C = -ID, -di/dt=50A/µs, Vcc < *4 Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area:500mm2) Electrical characteristics atTc =25°C ( unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Min. Test Conditions ID=250µA VGS=0V ID= 250µA VDS=VGS Symbol V(BR)DSS VGS(th) VDS =250V VDS =200V VGS=±30V ID=12.5A IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD trr Qrr VGS=0V VGS=0V VDS=0V VGS=10V Typ. 250 3.0 Tch=25°C Tch=125°C ID=12.5A VDS=25V VDS =75V VGS=0V f=1MHz VCC=72V ID=12.5A VGS=10V 8 RGS=10 Ω V CC =72V ID=25A VGS=10V L=309 µH Tch=25°C IF=25A VGS=0V Tch=25°C IF=25A VGS=0V -di/dt=100A/µs Tch=25°C 10 75 16 2000 220 15 20 30 60 20 44 14 16 Max. 5.0 25 250 100 100 3000 330 30 30 45 90 30 66 21 24 37 1.10 0.45 1.5 1.65 Units V V µA nA mΩ S pF ns nC A V µs µC Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Rth(ch-a) *4 Test Conditions channel to case channel to ambient channel to ambient Min. Typ. Max. 0.463 87.0 52.0 Units °C/W °C/W °C/W 1 2SK3535-01 FUJI POWER MOSFET Characteristics Allowable Power Dissipation PD=f(Tc) 5 Allowable Power Dissipation PD=f(Tc) 300 Surface mounted on 1000mm2,t=1.6mm FR-4 PCB (Drain pad area : 500mm2) 4 250 200 PD [W] PD [W] 3 2 150 100 1 50 0 0 0 25 50 75 100 125 0 150 25 50 75 Tc [ ° C] Typical Output Characteristics 100 100 125 150 Tc [°C] Typical Transfer Characteristic ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C ID=f(VDS):80µs Pulse test,Tch=25°C 100 20V 80 10V 8V 7.5V ID[A] ID [A] 60 7.0V 10 40 1 6.5V 20 6.0V 0.1 VGS=5.5V 0 0 2 4 6 8 10 12 0 1 2 3 4 VDS [V] 5 6 7 8 9 10 VGS[V] Typical Drain-Source on-state Resistance Typical Transconductance gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C 100 RDS(on)=f(ID):80µs Pulse test, Tch=25°C 0.25 VGS= 6.0V 5.5V 0.20 6.5V 7.0V 7.5V gfs [S] RDS(on) [ Ω ] 10 1 8V 0.15 10V 20V 0.10 0.05 0.1 0.00 0.1 1 10 ID [A] 100 0 20 40 60 80 100 ID [A] 2 2SK3535-01 270 FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA Drain-Source On-state Resistance RDS(on)=f(Tch):ID=12.5A,VGS=10V 7.0 6.5 240 6.0 5.5 max. 5.0 VGS(th) [V] RDS(on) [ m Ω ] 210 180 150 max. 120 4.5 4.0 3.5 3.0 90 min. 2.5 typ. 2.0 60 1.5 1.0 30 0.5 0 0.0 -50 -25 0 25 50 75 100 125 150 -50 Tch [°C] -25 0 25 50 75 100 125 150 Tch [°C] Typical Gate Charge Characteristics VGS=f(Qg):ID=25A, Tch=25°C 10 1 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 14 12 Ciss Vcc= 36V 72V 10 10 C [nF] VGS [V] 96V 0 8 Coss 6 10 -1 4 2 Crss 0 10 0 10 20 30 40 50 -2 10 60 -1 10 0 Qg [C] 1 10 2 Typical Switching Characteristics vs. ID Typical Forward Characteristics of Reverse Diode 100 10 VDS [V] t=f(ID):Vcc=72V, VGS=10V, RG=10Ω IF=f(VSD):80µs Pulse test,Tch=25°C 10 3 tf 10 2 td(off) t [ns] IF [A] 10 tr td(on) 1 0.1 0.00 0.25 0.50 0.75 1.00 VSD [V] 1.25 1.50 1.75 2.00 10 1 10 0 10 -1 10 0 10 1 10 2 ID [A] 3 2SK3535-01 700 FUJI POWER MOSFET Maximum Avalanche Current vs. starting Tch I(AV)=f(starting Tch):Vcc=48V Maximum Avalanche Energy vs. starting Tch E(AS)=f(starting Tch):Vcc=48V 30 IAS=15A 600 25 500 20 IAS=22A IAV [A] EAS [mJ] 400 300 IAS=37A 15 10 200 5 100 0 0 25 50 75 100 125 0 150 0 Zth(ch-c) [°C/W] starting Tch [°C] 10 1 10 0 10 -1 10 -2 10 -3 25 50 75 100 125 150 starting Tch [° C] Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] 10 2 Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25°C,Vcc=48V 100 Thermal Resistance vs. Drain Pad area t=1.6mm FR-4 PCB 90 10 10 10 Rth(ch-a) [°C/W] Avalanche Current I AV [A] Single Pulse 1 0 80 70 60 50 40 30 -1 20 10 -2 10 -8 10 10 -7 10 -6 10 -5 tAV [sec] 10 -4 10 -3 10 -2 0 0 1000 2000 3000 4000 5000 2 Drain Pad Area [mm ] http://www.fujielectric.co.jp/denshi/scd/ 4